BAS86 SCHOTTKY BARRIER DIODE MiniMELF (SOD-80C) FEATURES : Cathode Mark * For general purpose applications. * This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. * Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications * This diode is also available in the DO-35 case with type designation BAT86. * Pb / RoHS Free 0.063 (1.64) 0.055 (1.40) 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.134(3.4) Mounting Pad Layout 0.098 (2.50) Max. 0.049 (1.25)Min. 0.079 (2.00)Min. MECHANICAL DATA : 0.197 (5.00) REF Case: MiniMELF Glass Case (SOD-80C) Weight: approx. 0.05g Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter 25 C ambient temperature unless otherwise specified.) Symbol Value Continuous Reverse Voltage VR 50 Continuous Forward Current IF Unit V (1) mA 200 Repetitive Peak Forward Current at tp < 1s, IFRM 500(1) mA Power Dissipation PD 200(1) mW RJA TJ 300(1) 125 C/W Ta TS -65 to + 125 C -65 to + 150 C Thermal Resistance Junction to Ambient Air Junction Temperature Ambient Operating Temperature Range Storage temperature range C Note: (1) Valid provided that electrodes are kept at ambient temperature. Electrical Characteristics (TJ = 25C unless otherwise noted) Parameter Reverse Breakdown Voltage Symbol V(BR)R Reverse Current IR Forward Voltage Pulse Test tp <300s , <2% VF Diode Capacitance Cd Reverse Recovery Time Trr Page 1 of 1 Test Condition IR = 10 A (pulsed) VR = 40 V IF = 1mA IF = 10mA IF = 30mA IF = 100mA VR = 1V, f = 1MHz IF =10mA to IR = 10mA , measured at IR = 1mA Min Typ Max Unit 50 - - V - 0.275 0.365 0.460 0.700 - 5.0 0.380 0.450 0.600 0.900 8 A - - 5 ns V pF Rev. 03 : October 19, 2005