Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120G Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Ruckw. Spitzensperrspannung repetitive peak reverse voltage VRRM 1600 V Durchlastrom Grenzeffektivwert RMS forward current per chip I FRMSM 40 A Id 35 A I FSM 315 A Dauergleichstrom DC forward current TC = 80C Stostrom Grenzwert tP = 10 ms, Tvj = surge forward current tP = 10 ms, Tvj = 150C Grenzlastintegral tP = 10 ms, Tvj = 2 I t - value 25C 260 A 500 As 340 As VCES 1200 V I C,nom. 35 A IC 45 A I CRM 70 A Ptot 230 W VGES +/- 20V V IF 35 A I FRM 70 A I 2t 310 A2s VCES 1200 V TC = 80 C I C,nom. 17,5 A TC = 25 C IC 35 A 2 25C I t tP = 10 ms, Tvj = 150C 2 2 Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Tc = 80 C TC = 25 C Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, Gesamt-Verlustleistung total power dissipation TC = 25C TC = 80 C Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Tc = 80 C Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral I 2t - value VR = 0V, tp = 10ms, Tvj = 125C Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80C I CRM 35 A Gesamt-Verlustleistung total power dissipation TC = 25C Ptot 180 W VGES +/- 20V V IF 10 A I FRM 20 A Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Tc = 80 C Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms prepared by: Andreas Schulz date of publication:29.03.2001 approved by: Robert Severin revision: 3 1(11) http://store.iiic.cc/ DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120G Modul Isolation/ Module Isolation Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. typ. max. VF - 1,15 - V Tvj = 150C V(TO) - - 0,8 V Ersatzwiderstand slope resistance Tvj = 150C rT - - 10,5 m Sperrstrom reverse current Tvj = 150C, IR - 2 - mA Modul Leitungswiderstand, Anschlusse-Chip lead resistance, terminals-chip TC = 25C RAA'+CC' - 4 - m min. typ. max. - 2,4 2,85 V - 2,9 - V VGE(TO) 4,5 5,5 6,5 V Cies - 1,5 - nF Diode Gleichrichter/ Diode Rectifier Durchlaspannung forward voltage Tvj = 150C, Schleusenspannung threshold voltage IF = 35 A VR = 1600 V Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, IC = 35 A IC = 35 A IC = 1 mA Gate-Schwellenspannung gate threshold voltage VCE = VGE, Eingangskapazitat input capacitance f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V Kollektor-Emitter Reststrom collector-emitter cut-off current VGE = 0V, Tvj = 25C, VCE = 1200 V VGE = 0V, Tvj =125C, VCE = 1200 V Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Tvj = 25C, VCE = 0V, VGE =20V, Tvj =25C I C = INenn, VCC = 22 Ohm VGE = 15V, Tvj = 125C, RG = 22 Ohm I C = INenn, 600 V VGE = 15V, Tvj = 25C, RG = 22 Ohm VGE = 15V, Tvj = 125C, RG = 22 Ohm I C = INenn, 600 V VCC = VGE = 15V, Tvj = 25C, RG = 22 Ohm VGE = 15V, Tvj = 125C, RG = 22 Ohm I C = INenn, 600 V VCC = VGE = 15V, Tvj = 25C, RG = 22 Ohm VGE = 15V, Tvj = 125C, RG = 22 Ohm I C = INenn, 600 V VCC = VGE = 15V, Tvj = 125C, RG = I C = INenn, 75 nH VCC = 600 V LS = Kurzschluverhalten SC Data 22 Ohm LS = VGE = 15V, Tvj = 125C, RG = I CES - 1,5 500 A - 2,0 - mA I GES - - 300 nA td,on - 50 - ns - 50 - ns - 55 - ns - 55 - ns 600 V VGE = 15V, Tvj = 25C, RG = VCC = VCE sat 22 Ohm tr td,off - 290 - ns - 320 - ns - 50 - ns - 70 - ns Eon - 4,5 - mWs Eoff - 4,3 - mWs I SC - 160 - A tf 75 nH tP 10s, VGE 15V, RG = Tvj125C, VCC = 720 V dI/dt = 2800 A/s 22 Ohm 2(11) http://store.iiic.cc/ DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120G Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse-Chip lead resistance, terminals-chip TC = 25C Diode Wechselrichter/ Diode Inverter Durchlaspannung forward voltage VGE = 0V, Tvj = 25C, IF = 35 A VGE = 0V, Tvj = 125C, IF = 35 A Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy I F=INenn, - diF/dt = 600 V VGE = -10V, Tvj = 125C, VR = 600 V I F=INenn, 1400A/s VGE = -10V, Tvj = 25C, VR = 600 V VGE = -10V, Tvj = 125C, VR = 600 V I F=INenn, 1400A/s - diF/dt = VGE = -10V, Tvj = 25C, VR = 600 V VGE = -10V, Tvj = 125C, VR = 600 V Transistor Brems-Chopper/ Transistor Brake-Chopper VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, IC = 17,5 A IC = 17,5 A IC = 0,6mA Gate-Schwellenspannung gate threshold voltage VCE = VGE, Eingangskapazitat input capacitance f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V Kollektor-Emitter Reststrom collector-emitter cut-off current VGE = 0V, Tvj = 25C, VCE = 1200 V VGE = 0V, Tvj = 125C, VCE = 1200 V Gate-Emitter Reststrom gate-emitter leakage current Tvj = 25C, VCE = 0V, VGE = 20V, Tvj = 25C Diode Brems-Chopper/ Diode Brake-Chopper Tvj = 25C, Durchlaspannung forward voltage Tvj = 125C, 17,5 A IF = 17,5 A TC = 25C Abweichung von R100 deviation of R100 TC = 100C, R100 = 493 Verlustleistung power dissipation TC = 25C B-Wert B-value R2 = R1 exp [B(1/T2 - 1/T1)] max. LCE - - 100 nH RCC'+EE' - 7 - m min. typ. max. - 1,95 2,45 V - 1,8 - V - 40 - A - 45 - A - 3,5 - As - 7,5 - As - 1,3 - mWs - 2,5 - mWs min. typ. max. - 2,3 2,75 V - 2,7 - V VGE(TO) 4,5 5,5 6,5 V Cies - 1,0 - nF VF I RM Qr ERQ VCE sat I CES - 1,0 500 A - 1,2 - mA - - 300 nA min. typ. max. - 2,7 3,05 V - 2,6 - V min. typ. max. R25 - 5 - k R/R -5 5 % 20 mW I GES IF = NTC-Widerstand/ NTC-Thermistor Nennwiderstand rated resistance typ. 1400A/s VGE = -10V, Tvj = 25C, VR = - diF/dt = min. VF P25 B25/50 3375 K 3(11) http://store.iiic.cc/ DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120G Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand thermal resistance, junction to case RthJC Gleichr. Diode/ Rectif. Diode min. typ. max. - - 1 K/W Trans. Wechsr./ Trans. Inverter - - 0,55 K/W Diode Wechsr./ Diode Inverter - - 0,8 K/W Trans. Bremse/ Trans. Brake - - 0,7 K/W Diode Bremse/ Diode Brake - - 2,3 K/W - 0,04 - K/W - 0,02 - K/W - 0,04 - K/W Ubergangs-Warmewiderstand Gleichr. Diode/ Rectif. Diode Paste=1W/m*K thermal resistance, case to heatsink Trans. Wechsr./ Trans. Inverter grease=1W/m*K RthCK Diode Wechsr./ Diode Inverter Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj - - 150 C Betriebstemperatur operation temperature Top -40 - 125 C Lagertemperatur storage temperature Tstg -40 - 125 C Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation Al2O3 CTI comperative tracking index 225 M Anzugsdrehmoment f. mech. Befestigung mounting torque 3 Nm 10% Gewicht weight G 300 g 4(11) http://store.iiic.cc/ DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120G Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE) Output characteristic Inverter (typical) VGE = 15 V 70 60 Tj = 25C 50 Tj = 125C IC [A] 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 4 4,5 5 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE) Output characteristic Inverter (typical) Tvj = 125C 70 VGE = 17V 60 VGE = 15V VGE = 13V 50 VGE = 11V VGE = 9V IC [A] 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 VCE [V] 5(11) http://store.iiic.cc/ DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120G Ubertragungscharakteristik Wechselr. (typisch) IC = f (VGE) Transfer characteristic Inverter (typical) VCE = 20 V 70 60 50 Tj = 25C Tj = 125C IC [A] 40 30 20 10 0 0 2 4 6 8 10 12 14 VGE [V] Durchlakennlinie der Freilaufdiode Wechselr. (typisch) Forward characteristic of FWD Inverter (typical) IF = f (VF) 70 60 50 Tj = 25C Tj = 125C IF [A] 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 VF [V] 6(11) http://store.iiic.cc/ DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120G Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) Switching losses Inverter (typical) Tj = 125C, VGE = 15 V, VCC = RGon = RGoff = 600 V 22 Ohm 14 12 Eon Eoff Erec E [mWs] 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 IC [A] Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) Eon = f (RG), Eoff = f (RG), Erec = f (RG) Tj = 125C, VGE = +-15 V , Ic = Inenn , VCC = 600 V 7 Eon 6 Eoff Erec E [mWs] 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50 RG [ ] 7(11) http://store.iiic.cc/ DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120G Transienter Warmewiderstand Wechselr. Transient thermal impedance Inverter ZthJC = f (t) 1 Zth-IGBT ZthJC [K/W] Zth-FWD 0,1 0,01 0,001 0,01 0,1 1 10 t [s] Sicherer Arbeitsbereich Wechselr. (RBSOA) IC = f (VCE) Reverse bias save operating area Inverter (RBSOA) Tvj = 125C, VGE = 15V, RG = 22 Ohm 80 70 60 IC,Modul 50 IC [A] IC,Chip 40 30 20 10 0 0 200 400 600 800 1000 1200 1400 VCE [V] 8(11) http://store.iiic.cc/ DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120G Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) Output characteristic brake-chopper-IGBT (typical) IC = f (VCE) VGE = 15 V 35 30 Tj = 25C Tj = 125C 25 IC [A] 20 15 10 5 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 VCE [V] Durchlakennlinie der Brems-Chopper-Diode (typisch) IF = f (VF) Forward characteristic of brake-chopper-FWD (typical) 35 30 25 Tj = 25C Tj = 125C IF [A] 20 15 10 5 0 0 0,5 1 1,5 2 2,5 3 3,5 4 VF [V] 9(11) http://store.iiic.cc/ DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120G Durchlakennlinie der Gleichrichterdiode (typisch) Forward characteristic of Rectifier Diode (typical) IF = f (VF) 70 60 50 Tj = 25C Tj = 150C IF [A] 40 30 20 10 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 120 140 160 VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp R[ ] 10000 1000 100 0 20 40 60 80 100 TC [C] 10(11) http://store.iiic.cc/ DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120G Schaltplan/ Circuit diagram 21 8 22 20 1 2 3 23 19 7 14 18 13 4 12 24 9 16 17 5 15 6 NTC 11 10 Gehauseabmessungen/ Package outlines Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 11(11) http://store.iiic.cc/ DB-PIM-10 (2).xls Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. 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