CASE 29-04, STYLE 5 TO-92 (TO-226AA) 1 Drain MAXIMUM RATINGS Rating Symbol Value Unit Gite Drain-Source Voltage Vos 25 Vdc ; 1 Drain-Gate Voltage VpG 25 Vde - 2 3 2 Source Reverse Gate-Source Voltage v -25 Vde Gate Current : i. 10 mAde JFETs oe G :, GENERAL PURPOSE Total Device Dissipation @ Ta = 25C Pp 310 mW Derate above 25C 2,82 mWwPrc N-CHANNEL DEPLETION Junction Temperature Range Ty 125 C &This is a Motorola Storage Channel Temperature Range Tstg -65 to +150 Cc designated preferred device. ELECTRICAL CHARACTERISTICS (Tq = 25C unless otherwise noted.) Characteristic _ _, ee Symbol | Min Typ Max | Unit | OFF CHARACTERISTICS _ oe . Looe . : Gate-Source Breakdown Voltage ViBR)GSS -25 _ - Vde (lg = 10 pAdc, Vpsg = 0) Gate Reverse Current loss nAdc (Vgs = 15 Vde, Vpsg = 0) - = - -1.0 (Vgs = 15 Vde, Vpg = 0, Ta = 100C) we gee - - 200 Gate Source Cutoff Voltage VGSt(off} ~0.5 - 6,0 Vde (Vps = 15 Vde, Ip = 10 nAdc) _ ; cea Gate Source Voltage Ves - -2.5 - Vde (Vps = 15 Vde, Ip = 100 pAdc} ON CHARACTERISTICS Zero-Gate-Voltage Drain Current* IDss 1.0 3.0 5.0 mAdc WVps = 15 Vde, Vas = 0) ae SMALL-SIGNAL CHARACTERISTICS oe . _ - Forward Transfer Admittance Common Source* ltsl 1000 - 5000 pimhos (Vps = 15 Vde, Vgg = 0, f = 1.0 kHz) . Output Admittance Common Source* lYosl - 10 50 pimhos (Vps = 15 Vde, Vgg = 0, f = 1.0 kHz) Input Capacitance Ciss _ 4.5 7.0 pF (Vpg = 15 Vde, Vag = 0, f = 1.0 MHz) ; ee Reverse Transfer Capacitance Crss _ 15 3.0 pF (Vps = 15 Vde, Vgg = 0, f = 1.0 MHz) (1) Pulse Test: Pulse Width < 630 ms; Duty Cycle < 10%. a Motorola Small-Signal Transistors, FETs and Diodes Device Data2N5457 FIGURE 1 NOISE FIGURE versus FREQUENCY Vos = 15V Ves = 0 Rs= 1 MQ FIGURE 2 NOISE FIGURE versus SOURCE RESISTANCE 14 12 g 10 2 a Z g E * 4 2 Q AFT O1 1 10 100 001 Ol 0.4 1 10 f, FREQUENCY (kHz) Rg, SOURCE RESISTANCE (Megohms) FIGURE 4 COMMON SOURCE TRANSFER FIGURE 3 TYPICAL DRAIN CHARACTERISTICS CHARACTERISTICS Ves{oft) = 1.2 VOLTS Va@stoft) = 1.2 VOLTS 12 12 Ves = OV 10 a 1.0 { [ Vos = 15Y 08 an 08 7 i / = 0.6 0.6 =z = = O4Y = A 4 a4 yo 0.4 L 0.6Y / 02 4 -08V 2 YY -10V | 0 : 0 0 5 io 15 20 25 -12 0.8 -04 0 Vos, DRAIN-SQURCE VOLTAGE (VOLTS) Ves, CATE-SOURCE VOLTAGE (VOLTS) 4-4 Motorola Small-Signal Transistors, FETs and Diodes Device DataIp, DRAIN CURRENT (mA) Ip, DRAIN CURRENT (mA) 2N5457 FIGURE 6 COMMON SOURCE TRANSFER FIGURE 5 TYPICAL DRAIN CHARACTERISTICS CHARACTERISTICS VGs(oft) = 3.5 VOLTS Vastoft) = 3.5 VOLTS 5 5 Ves =0 Vos = 15V 4 4 3 2 3 -1V a / | 3 | i 2 ga 2 2 1 1 3V 0 0 0 5 10 i5 20 25 5 4 3 2 I 0 Vps, DRAIN-SOURCE VOLTAGE (VOLTS) Ves, GATE-SOURCE VOLTAGE (VOLTS) FIGURE 8 COMMON SOURCE TRANSFER FIGURE 7 TYPICAL DRAIN CHARACTERISTICS CHARACTERISTICS Vastoff) = 5.8 VOLTS Vasioff) 5.8 VOLTS 10 Vos = 15V 8 / = z 6 f 5 / = -8 = z / 6 4 / 2 7 - 0 0 10 15 20 25 7 6 - 4 3 =2 -l 0 Vos, DRAIN-SOURCE VOLTAGE (VOLTS) Ves, GATE-SOURCE VOLTAGE (VOLTS) NOTES: 1. Graphical data is presented for do conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under de conditions, self heating in higher Ipgg units re- duces ings (See Figure 10). 2. Figures 8, 9, 10: Data taken in a standard printed circuit with a TO-18 type socket mounting and 1/4" Jead length. Motorola Smali-Signal Transistors, FETs and Diodes Device Data 4-52N5460 thru 2N5462* CASE 29-04, STYLE 7 TO-92 (TO-226AA) 2 Drain MAXIMUM RATINGS 3 Rating Symbol Value Unit Gate Drain-Gate Voltage VpG 40 Vde 1 Source Reverse Gate-Source Voltage VGSR 40 Vdc Forward Gate Current Ie 10 mAdc JFET Total Device Dissipation @ Ta = 25C Pp 350 mW AMPLIFIERS Derate above 25C 2.8 mWw?rC P-GHANNEL DEPLETION Junction Temperature Range : TJ -65 to +135 C *These are Motorola Storage Channel Temperature Range Tstg -65 to +150 c designated preferred devices. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic | Symbol | Min | Typ Max Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage . V(BRIGSS Vde {ig = 10 wAde, Vpg = 9) 2N5460, 2N5461, 2N5462 40 Gate Reverse Current : ; . lass (V@g = 20 Vde, Vos = 0) 2N5460, 2N5461, 2N5462 _ _ 5.0 nAdc (VGsg = 30 Vde, Vps = 0) (Vag = 20 Vde, Vps = 0, Ta = 100C) 2N5460, 2N5461, 2N5462 _ _ 1.0 pAdc (Vgs = 30 Vde, Vps = 0, Ta = 400C) ; Gate Source Cutoff Voltage . : VGSloff) Vde (Vpsg = 15 Vde, Ip = 1.0 wAde) 2N5460 0.75 _- 6.0 2N5461 1.0 _ 75 2N5462 1.8 - 9.0 Gate Source Voltage : Ves Vde {(Vpg = 15 Vde, Ip = 0.1 mAdc} 2N5460 0.5 _ 4.0 (Vpg = 15 Vde, Ip = 0.2 mAde} 2N5461 0.8 _ 45 (Vps = 15 Vde, Ip = 0.4 mAdc} 2N5462 1.5 _ 6.0 ON CHARACTERISTICS Zero-Gate-Voltage Drain Current Ipss mAdc (Vpg = 15 Vde, Vas = 0, 2N5460 -1.0 _ - 5.0 f = 1.0 kHz} 2N5461 -2.0 _- -9.0 2N5462 -4,0 _ ~16 SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance lvesl pmhos (Vps = 15 Vde, Vgg = 0, f = 1.0 kHz) 2N5460 1000 _ 4000 2N5461 1500 _ 5000 2N5462 2000 6000 Output Admittance \Yosl _ - _ 75 pmhos (Vps = 15 Vde, Vag = 0, f = 1.0 kHz) input Capacitance : Ciss _~ - 5.0 7.0 pF {Vps = 15 Vde, Vag = 0, f = 1.0 MHz} Reverse Transfer Capacitance . Crss _ 1.0 2.0 pF (Vps = 15 Vde, Vgg = 0, f = 1.0 MHz) FUNCTIONAL CHARACTERISTICS Noise Figure NF _ - 1.0 2.5 dB (Vpg = 15 Vde, Vag = 0, Rg = 1.0 Megohm, f = 100 Hz, BW = 1.0 Hz) Equivalent Short-Circuit Input Noise Voltage en _ 60 115 nv/VHz {(Vpg = 15 Vde, Vgg = 0, f = 100 Hz, BW = 1.0 Hz) 4-6 Motorola Small-Signal Transistors, FETs and Diodes Device DataIp, DRAIN CURRENT (mA) Ip. DRAIN CURRENT (mA) i Io, ORAIN CURRENT (mA) 4.0 3.5 3.0 2.5 2.0 DRAIN CURRENT versus GATE SOURCE VOLTAGE FIGURE 1 Vesioff} = 2.6 VOLTS a | | vos i6V : SN + 55C 7 i DS Se asc. -- fee =<] pT] 1. ESRC Pd ee LO et Q o2 04 06 08 1.0 1200 14 16 (18 2.0 VGs, GATE-SOURCE VOLTAGE (VOLTS) FIGURE 2 Vgstoff) = 4.0 VOLTS Vos=15V 0 0.8 1.0 1.5 2.0 25 3.0 3.6 4.0 Vgs. GATE-SOURCE VOLTAGE (VOLTS) FIGURE 3 Ves(off) = 5.0 VOLTS Vos = 16V Ta = -559C | 28C 125C 0 1.0 2.0 3.0 4.0 5.0 6.0 700-8! Vos, GATE-SQURGE VOLTAGE (VOLTS) 2N5460 thru 2N5462 FORWARD TRANSFER ADMITTANCE versus DRAIN CURRENT FIGURE 4 Vggiotf) = 2.0 VOLTS 000 w a So So 2000 1000 a os 32 eo & Vos = 16V f = 1.0 kHz w So a 200 Wis] FORWARD TRANSFER ADMITTANCE (jz mhos) S he 03. 05 ~O7 1.0 2.0 30 064.0 Ip, DRAIN CURRENT (mat . FIGURE 5 Vagioff) = 4.0 VOLTS 7000 5000 3000 2000 1000 ft TLL uo 7 ~ -SPTT: . f. -Vos=15V 700 Ee yo Lf = 1.0 kHe 500 0.5 07 1.0 20 3.0 5.0 70 ig DRAIN CURRENT (ma) Nis] FORWARD TRANSFER ADMITTANCE (umhos) FIGURE 6 Vasioft) = 5.0 VOLTS 1e0o0 =F 7000 5000 3000 2000 [fs| FORWARD TRANSFER ADMITTANCE (umhos} 1000 ob . . - ~7Vpg = 15 V 700; _ oT T= 1.0 kHz 500 ; 05. OF 1.0 ~ 2.0 3.0 50. 70 10 Ip GRAIN CURRENT (mA) Motorola SmallSignal Transistors, FETs and Diodes Device Data 4-72N5460 thru 2N5462 FIGURE 7 CUTPUT RESISTANCE FIGURE 8 CAPACITANCE VERSUS VERSUS DRAIN CURRENT DRAIN-SOURCE VOLTAGE 1000 - 7 700 $= 1.0 MHz @ 500 Ves 7 0 E o = 300 i uw & Oo z 200 8 a we 10 = _ i 2 5 - a 5 os 2 30 8 = 20 10 Crss - 0.1 0.2 0.5 1.0 2.0 5.0 10 0 10 20 30 40 Ip. DRAIN CURRENT (mA) ~ Vps, DRAINSOURSE VOLTAGE (VOLTS) ~ FIGURE 9 NOISE FIGURE FIGURE 10 - NOISE FIGURE VERSUS VERSUS FREQUENCY SOURCE RESISTANCE 5.0 10 pope ee cocrpeepoiore + - TTT In Wd Vos = 15 V 9.0 NPY pty ese Ves = 9 DS = 40 |} R nom hm || 80;--h Pye ese yyy ~ a Ge iu Megohn a i= 100 H 2 S 7ot-+4N tH $p ape = h w N 5 30 \ T th ae oop 5S 60- --+ PNT spetini ot EP o 9 N x N = 5of41-. He bb aE LE ED piece B Ea \ S 20 eR HH - o 4.0 ~}-4+-T Hite s H eet cp teh tah = N 2 N uw N ws 3.0; tes - Ht =z NJ = NJ 1.0 + a 20; --p4> aT -4 HH Pens ~~. toe 1.0 tH = + 4-7 H - 0 0 _ / 10 20 30 50 100 200300 500 ,000 20003000 16,060 4.0 10 100 1000 70,000 f, FREQUENCY (Hz} Rg, SOURCE RESISTANCE (k Ohms) - FIGURE 11 EQUIVALENT LOW FREQUENCY CIRCUIT . . j . . vi > 16 - -- . Crss Common Source y Parameters for Frequencies Betow 30 MHz Ciss Toss Coss Yes} Yi Vig = 100 Cigg Vos = 102 Cgen* + V rose Yis Vis | = > Vig * iw Cpe _ Cosp is Coss in parallel with Series Combination of Cisg and Crss, 7 NOTE: 1, Graphical datz is presented for dc conditions. Tabular data is aoa for pulsed conditions {Pulse Width = 630 ms, Duty Cycle = 4-8 Motorola Small--Signal Transistors, FETs and Diodes Device Data2N5484 2N5486* CASE 29-04, STYLE 5 TO-92 (TO-226AA) 1 Drain MAXIMUM RATINGS _ Rating Symbol Value Unit Gate Drain-Gate Voltage VoG 25 Vde 1 3 Reverse Gate-Source Voltage VGSR 25 Vde 2 Source a a sre onwere Sate curren oie _ 350 Ww VHF/UHF AMPLIFIERS Total Device Dissipation Cc = 25" D m Derate above 25C 2.8 mWPC N-CHANNEL DEPLETION Operating and Storage Junction Ty. Tstg | 65 to +150 C *These are Motorola Temperature Range designated preferred devices. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) - ; | Characteristic . | Symbol Min Typ Max | Unit | OFF CHARACTERISTICS - . * Gate-Source Breakdown Voltage VIBRIGSS 725 - - Vde (lg = 1.0 pAdc, Vpg = 0) _. Gate Reverse Current lass V@g = 20 Vde, Vps = 0) - - -1.0 nAde (V6g = ~20 Vdc, Vos = 0, Ta = 100C) _ - -_ -0,2 pAdc Gate Source Cutoff Voltage Vesioff) Vde (Vps = 15 Vdc, Ip = 10 nAde) 2N5484 -0.3 ~ -3.0 ; 2N5486 _ -2.0 - 6.0 ON CHARACTERISTICS Zero-Gate-Voltage Drain Current loss mAdc (Vps = 15 Vdc, Vgs = 0} 2N5484 1.0 - 5.0 _ 2N54860 8.0 - 20 SMALL-SIGNAL CHARACTERISTICS _ Forward Transfer Admittance . lvtsl umhos {Vps = 15 Vde, Vag = 0, f = 1.0 kHz) 2N5484 3000 - 600 . 2N5486 4000 ~ 8000 Input Admittance - Re(yjs) umhos (Vpg = 15 Vde, Veg = 0, f = 100 MHz) 2N5484 _ _ 100 (Vps = 15 Vde, Veg = 0, f = 400 MHz) 2N54860 - - 1000 Output Admittance . lYosl pmhos (Vps = 15 Vde, Vgg = 0, f = 1.0 KHz) 2N5484 - - 50 _ 2N5486 _ _ 75 Output Conductance Reygs) umhos (Vps = 16 Vde, Vgg = 0, f = 100 MHz) 2N5484 ~ ~ 75 Vpg = 15 Vde, Vag = 0, f = 400 MHz} 2N5486 - _ 400 Forward Transconductance Re(yfs) pumhas (Vps = 15 Vdc, Vgg = 0, f = 100 MHz) 2N5484 2500 - - (Vpg = 15 Vde, Veg = 0, f = 400 MHz) 2N5486 . 3500 - - Motorola Small-Signal Transistors, FETs and Diodes Device Data 4-92N5484 2N5486 ELECTRICAL CHARACTERISTICS (continued) {Ta = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Input Capacitance Ciss - - 5.0 pF (Vpg = 15 Vde, Ves = 0, f = 1.0 MHz) Reverse Transfer Capacitance Crss - - 1.0 pF (Vps = 15 Vdc, Vag = 0, f = 1.0 MHz} Output Capacitance : Coss - - 2.0 pF (Vpg = 15 Vdc, Veg = 0, f = 1.0 MHz) FUNCTIONAL CHARACTERISTICS Noise Figure NF dB (Vps = 15 Vdc, Vgg = 0, Rg = 1.0 Megohm, f = 1.0 kHz) - - 2.5 (Vps = 15 Vde, Ip = 1.0 mAdc, 2N5484 - - 3.0 Rg = 1.0 k chm, f = 100 MHz) (Vps = 15 Vde, Ip = 1.0 mAdc, 2N5484 - 4.0 - Rg = 1.0k ohm, f = 200 MHz) (Vps = 18 Vde, Ip = 4.0 mAdc, 2N5486 - - 2.0 Rg = 1.0 k ohm, f = 100 MHz} (Vps = 15 Vde, Ip = 4.0 mAdc, 2N5486 - - 4.0 Rg ~ 1.0 k ohm, f = 400 MHz) Common Source Power Gain Gps dB (Vps = 15 Vde, Ip = 1.0 mAde, f = 100 MHz) 2N5484 16 - 25 (Vpg = 15 Vde, Ip = 1.0 mAde, f = 200 MHz) 2N5484 - 14 - (Vpg = 15 Vde, Ip = 4.0 mAdc, f = 100 MHz) 2N5486 18 - 30 (Vpg = 15 Vde, Ip = 4.0 mAdc, f = 400 MHz} 2N5486 10 - 20 POWER GAIN FIGURE 1 EFFECTS OF DRAIN CURRENT 24 ny So so z= =z a 16 o oc - Ww 2 12 Tehannel * a0 Vos = 15 Vde Ves= OV 4.0 4.0 10 Ip. DRAIN CURRENT (mA} 4-10 Motorola Small-Signal Transistors, FETs and Diodes Device Data2N5484 2N5486 FIGURE 2 ~ 100 MHz and 400 MHz NEUTRALIZED TEST CIRCUIT SS Se 71 Neutralizing 1 I | Coil u1 c2 c3 | Ihe aaa | c1 as Ly tT Input J ., re ca QL2 | To 500 2 _ ae rt * a | Load Te500; | ose \ i Source | Rg L3 x t 4! Case | | +], c ! Lhe 4 tH -yle -f. Safe Common t Ves Vos Ip =5.0mA +15 V Adjust Vgs for NOTE: The noise source is a hot-cold body (ph = 50 mA Vesx 9 Volts (ALL type 70 or equivalent) with a "ui 17 turns, (approx. ~ depends upon circuit layout) AWG #28 **L1 enameled copper wire, close wound on 9/32" ceramic coil form. Tuning provided by a powdered iron stug. L2 4-1/2 turns, AWG #18 enameled copper wire, 5/16" long, L2 3/8" 1.D. (AIR CORE). L3 3.1/2 turns, AWG #18 enameled copper wire, 1/4! tong, L3 3/8" 1.0. (AIR CORE). NOISE FIGURE (Tchannet = 25C) FIGURE 3 EFFECTS OF DRAIN-SOURCE VOLTAGE 10 ~ 7. BG Ip=5.0mA a0 p 55 a g w 60 w 48 = > 3 s aw Los 2 40 wo35 a a =z = uw - z = 20 25 100 2.0 40 Vos, DRAIN-SOQURCE VOLTAGE (VOLTS) 60 80 8 10 12 4 16 18 820 test receiver (AIL type 136 of equivalent). Reference VALUE Designation | 100 MHz 400 MHz ci 7.0 pF 1.8 pF C2 1000 pF 17 pF C3 3.0 pF 1,0 pF c4 1-12 pF 0.8-8.0 pF cs 1-12 pF 0.8-8.0 pF c 0.0015 nF 0.001 uF C7 0,0015 hr 0.001 pF 1 3.0 HH* 0.2 BH** L2 0.15 wH* 0.03 RH** La 0.14 HH* | 0.022 uH** 6 turns, (approx. depends upon circuit layout) AWG #24 enameled copper wire, close wound on 7/32" ceramic coil form. Tuning provided by an aluminum slug. 1 turn, AWG #16 enameled copper wire, 3/8" 1.D. (AIR CORE), 1/2 turn, AWG #16 enameled copper wire, 1/4" 1.0. (AiR CORE), FIGURE 4 EFFECTS OF DRAIN CURRENT Vps= 15V vi =OV 2.0 40 60 a0 Ip, ORAIN CURRENT (ma) INTERMODULATION CHARACTERISTICS FIGURE 5 THIRD ORDER INTERMODULATION DISTORTION +40 +20 3RD GRDER INTERCEPT - @ of Vos= 15 Vie | i 2 f1= 399 MHz ! | wag 42-= 400 MHz PS lg y E 40 Rr) eal 7. e 60 wih ow A co ma w ye & a) va < L. Ss 5 -100b~ s & wf 2 -i20 $ : of 3 3-140 - 3 > wo e/ -140 -120 100-80 ~60 -40 ~20 0 +20 Pin, INPUT POWER PER TONE Motorola Smail-Signal Transistors, FETs and Diodes Device Data (dB) ver2N5484 2N5486 COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS (Vps = 15 Vdc, Tohannel = 25C) FIGURE 6 INPUT ADMITTANCE (y;s} gig. INPUT CONDUCTANCE {mmhos) bis, INPUT SUSCEPTANCE (mmhos) cy 1 20 30 50 70 100 200 = 300 f, FREQUENCY (MH2) 500 700 1006 FIGURE 8 FORWARD TRANSADMITTANCE (y;) 20 10 7.0 6.0 30 20 10 7 05 (bfs! @ 0.25 0.3 02 10 2 30 so 70 6100 f, FREQUENCY (MH2} Ms. FORWARD TRANSCONDUCTANCE (mmbos) bts]. FORWARD SUSCEPTANCE (rmmbos} 200 300 500 700 1000 FIGURE 7 REVERSE TRANSFER ADMITTANCE (yrs) ad oc eS b;3@ Ipss 1 0. REVERSE SUSCEPTANCE (mmhos} eS @ Ipss, 0.25 Ors, REVERSE TRANSADMITTANCE (mmhos} 10 28 (30 50 70 6180 f, FRQUENCY (MHz) 200 300 8=500 700 1000 FIGURE 9 OUTPUT ADMITTANCE lyos) @ Ipss and 0.25 Pay > Sos, OUTPUT ADMITTANCE (nihos) bog. OUTPUT SUSCEPTANCE (nhos) 2 10 20030 0 70 100 f, FREQUENCY (MHz) 200 300 500 700 1000 4-12 . Motorola Small-Signal Transistors, FETs and Diodes Device Data2N5484 2N5486 COMMON SOURCE CHARACTERISTICS SPARAMETERS (Vpg = 15 Vde, T = 25C, FIGURE 10 ~ S145 OS ate Points ene FIGURE 11 S125 309 20 19 oe = 3509 = 3400 330 390 20 109 ae 3509 = 3499 330 1 ip = 0.251 ae RO 1.0 3209 409 ie 0 100 BS SE ROS es Se Sa 09 B 82 SSE S i j f g se WOOF ogee Sear ae Z is a i109 pea ahoe 600k ES ey Ae Hs oes 3000 Bee = iy lj oo i 290 oS LES 4 290 2008 oe ee 4 Ese 2800 iE [FA 599 SSS ee HEA 2709 soot a Ep 20 Se ane PEA a CS Cen rR T= 1100 250 1109} a e 3342409 1290 1399 ROS ee 34 230 1309} 4409 : 220 14098 FIGURE 12 ~ S94. FIGURE 13 - Sa, 30 20 10 09 350 340 330 30 209 10 ae 3509 34 330 & 1 200 sap Ip = 0.251 itt tt. Noe xi, io AO HTL 3209 4g0 i wa ins 320 WI H 20 500 e Hd : Yann 300 600 06 ee og pHi aon 700 soos at 3100 sq : p00 800 3109 6 600 300 = < 700525 0.8 esc : 0.8 mn 800 Besar BOOBS : a SI! SR HE 1D = Ips POE 300 500 Sanat 0.4: es 07 E 0 - 0 NOR FA eS . 290 70 a0 SRS ose or 290 79 ee Bees z = 3 x, A NS t = _ = 80HE 700 fe? BOD pS AS 280 s00R ee ee AGG 2800 ERE aon | = 0.25 Ings | 0.3 a fa Sa 5.6 00H 600 tebe . : SPAM inaiagerecesstescaelzserate: : JER ES THEEEEH o7qo 600 : : e : too Fey 500 453 500 Ze 0.3 E2609 1000p rare 2609 100 . 4. a 28 400 A roobese, 400 300 oot oa 250 110 250 300 : : 1200 SAS H PCN 2A09 120 ees eens 24q0 200 BEE COTE 0.5 Q Bes . ff POR Ts 1390 lp = Ipss 230 7390 oy 239 oe 08 oe d H ny H 1400 He : SSH 2200 1409 Ht 2209 1999601701802 390 290221900 : ist 60 1709 yag9 gg? 209g ate Motorola Smail-Signal Transistors, FETs and Diodes Device Data 4-132N5484 2N5486 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (Vpg = 15 Ve, Tehannel = 25C) FIGURE 14 INPUT ADMITTANCE (yig) dig @ IDSs @ 0.26 Inss big @ IDss gig, INPUT CONDUCTANCE (mmhos) big. INPUT SUSC EPTANCE frmmhod big @ 0.25 Ipss 10 70 30~=~=SS0 70 100 200 300 {, FREQUENCY (MHz) 500 700 1000 FIGURE 16 FORWARD TRANSFER ADMITTANCE (yg) 10 7.0 Sfg @ Ipss 5.0 3.0 Sig@ loss 2.0 ig, FORWARD TRANSCONDUCTANCE (mmhos} bt. FORWARD SUSCEPTANCE (ambos) FIGURE 15 REVERSE TRANSFER ADMITTANCE (yrq) 0.5 0.3 0.2 9.1 0.07 0.05 0.03 0.02 = RSE SUSCEPTANCE (mmhos) 6.25 Ipss 6.01 REVERSE TRANSADMITTANCE (mmhos} beg, REVE @ Ipss, 0.25 Ings org 0.005 19_. 20 30 50 7a 100 200 300 6500 700 1000 f, FREQUENCY (MHz) FIGURE 17 OUTPUT ADMITTANCE (yog) Sag. OUTPUT ADMITTANCE (mmbas) DUTPUT SUSCEPTANCE {mmhos} a7 05 02 brg @ 0.25 inss 2 Sog 'pss o1 10 2 063008070100 200 300 500 700 1008 10 22 30 0= 6G 70100 200 300 500 700 1000 f, FREQUENCY (MHz) f, FREQUENCY (MHz) 4-14 Moicrola Smal!-Signal Transistors, FETs and Diodes Device DataFIGURE 18 S44, 2N5484 2N5486 COMMON GATE CHARACTERISTICS S-PARAMETERS (Vpg = 15 Vdc, Tohannel = 25C, Data Points in MHz) FIGURE 19 S42, 3020 ig? 3802) 34g) 30 209 = 10g 3502 = 3402 gan 49 a7 Ip = 0.25 Iss 774 3200 400 0.04 320 100 200 3007 0.6 400 50 100 200 500 319 s9e 310 05 300 Fi . BoP oe 300 9 309 70 o4 q\0 IDss 500%. 290 70 Rs 2999 SS 100 goof 24) 280 309 280 : 0.3 ee 800 g0ERE: i 0 2709 90 270 500; 100 A 2607 190 q a0 NN 260 1100 : 260 1199 2500 1200 240 120 24ae os 130 a ] 230 1300 230 . e , iT UAT / < 1499 Bye fi ik Nj 220 1409 2200 150 160170 1809 19002990 300 coeys00 16001708 a8 agg ago no FIGURE 20 Sig FIGURE 21 Saag oo 3600 3400) aggo 309 20 =~ te ao 3509 = 34093309 ate Hy HMA RT 400 hy 40f Li ve Le is 370 200 320 iS Bs es cS 23100 310 SS = ls = a SS NN SN aH ie Hae May Re Bie SOA RR aX x Soe ok . a Bese - < ee 300 300 RAN : < RSC ios a 799 S iii teae ease re 299 290 ; 800 280 289 90 12700 270 iN NS 100 il 7 {2600 2609 ee SEES os Bh = ; 1100 BES ae ep 2 | ie a 250 250 a ae . = x a 2400 240 Berea Ha oe ~ Fe RS ce i 1300 oo Lia i i a ESSN 230 2300 oe ny a Hil rh i Ee De oy HT AN aN 1400 a L) Hh Hy Mt He Hn i 7 ie 2200 PRR ih bheh He Hl til i i i EASES e007 age 190? 2009 a Motorola Small-Signal Transistors, FETs and Diodes Device Data 4~15 iru au" ue auur au \ouv Yur TY BUY 18 209 2109