© Semiconductor Components Industries, LLC, 2008
April, 2006 - Rev. 8
1Publication Order Number:
2N6504/D
2N6504 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half‐wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
Features
Glass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 Volts
300 A Surge Current Capability
Pb-Free Packages are Available*
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCRs
25 AMPERES RMS
50 thru 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
K
G
A
TO-220AB
CASE 221A
STYLE 3
1
2
3
4
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4Anode
MARKING
DIAGRAM
2N650xG
AYWW
x = 4, 5, 7, 8 or 9
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Device
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
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2N6504 Series
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2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
*Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = 25 to 125°C)
2N6504
2N6505
2N6507
2N6508
2N6509
VDRM,
VRRM
50
100
400
600
800
V
On‐State Current RMS (180° Conduction Angles; TC = 85°C) IT(RMS) 25 A
Average On‐State Current (180° Conduction Angles; TC = 85°C) IT(AV) 16 A
Peak Non‐repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C) ITSM 250 A
Forward Peak Gate Power (Pulse Width 1.0 ms, TC = 85°C) PGM 20 W
Forward Average Gate Power (t = 8.3 ms, TC = 85°C) PG(AV) 0.5 W
Forward Peak Gate Current (Pulse Width 1.0 ms, TC = 85°C) IGM 2.0 A
Operating Junction Temperature Range TJ-40 to +125 °C
Storage Temperature Range Tstg -40 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
*Thermal Resistance, Junction-to-Case RqJC 1.5 °C/W
*Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds TL260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C
TJ = 125°C
IDRM,
IRRM -
-
-
-
10
2.0
mA
mA
ON CHARACTERISTICS
*Forward On-State Voltage (Note 2) (ITM = 50 A) VTM - - 1.8 V
*Gate Trigger Current (Continuous dc) TC = 25°C
(VAK = 12 Vdc, RL = 100 W)T
C = -40°C
IGT -
-
9.0
-
30
75
mA
*Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 W, TC = -40°C) VGT - 1.0 1.5 V
Gate Non‐Trigger Voltage (VAK = 12 Vdc, RL = 100 W, TJ = 125°C) VGD 0.2 - - V
*Holding Current TC = 25°C
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = -40°C
IH-
-
18
-
40
80
mA
*Turn‐On Time (ITM = 25 A, IGT = 50 mAdc) tgt - 1.5 2.0 ms
Turn‐Off Time (VDRM = rated voltage)
(ITM = 25 A, IR = 25 A)
(ITM = 25 A, IR = 25 A, TJ = 125°C)
tq
-
-
15
35
-
-
ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off‐State Voltage (Gate Open, Rated VDRM, Exponential Waveform) dv/dt - 50 - V/ms
*Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2N6504 Series
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3
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol Parameter
VDRM Peak Repetitive Off State Forward Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage
IHHolding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode -
Forward Blocking Region
IRRM at VRRM
(off state)
C
T , MAXIMUM CASE TEMPERATURE ( C)°
dc180°
16
12
0
80
90
10
0
110
13
0
60°
α = 30°
0 4.0 8.0 12 20
α = CONDUCTION ANGLE
IT(AV), ON‐STATE FORWARD CURRENT (AMPS)
α
90°
P , AVERAGE POWER (WATTS)
(AV)
180°
90°
24
0
8.0
16
32
TJ = 125°C
dc
60°
α = 30°
IT(AV), AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
160 4.0 8.0 12 20
α = CONDUCTION ANGLE
α
Figure 1. Average Current Derating Figure 2. Maximum On-State Power Dissipation
2N6504 Series
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4
1.0
0.02
0.03
0.05
0.07
0.1
100
0.2
0.3
0.5
0.7
0.2 0.3 0.5 1.0 2.0
25°C
125°C
0.4
0.1
ZqJC(t) = RqJC r(t)
1 CYCLE
1.0
200
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
TC = 85°C
f = 60 Hz
NUMBER OF CYCLES
225
250
275
300
20
2.0 3.0 4.0 6.0 8.0 10
0.1
0
0.01
t, TIME (ms)
3.0 5.0
175
0.2
0.3
0.5
0.7
7.0
5.0
1.0
2.0
10
50
3.0
20
30
70
vF, INSTANTANEOUS VOLTAGE (VOLTS)
1.2 2.01.6 2.4 2.80.8
30 50 100 200 300 500 2.0 k10 3.0 k 5.0 k 10 k1.0 k
I , PEAK SURGE CURRENT (AMP)
TSM
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) F
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
Figure 3. Typical On-State Characteristics Figure 4. Maximum Non-Repetitive Surge Current
Figure 5. Thermal Response
2N6504 Series
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5
TYPICAL TRIGGER CHARACTERISTICS
Figure 6. Typical Gate Trigger Current
versus Junction Temperature
Figure 7. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 8. Typical Holding Current
versus Junction Temperature
10
1
100
125110806550355-10-25 20
TJ, JUNCTION TEMPERATURE (°C)
IGT, GATE TRIGGER CURRENT (mA)
-40 95
VGT
125110958050355-40
0.8
-10-25 20
TJ, JUNCTION TEMPERATURE (°C)
0.6
0.4
0.2
, GATE TRIGGER VOLTAGE (VOLTS)
1.0
65
0.9
0.7
0.5
0.3
I , HOLDING CURRENT (mA)
H
TJ, JUNCTION TEMPERATURE (°C)
100
10
1
125110958050355-40 -10-25 20 65
2N6504 Series
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6
ORDERING INFORMATION
Device Package Shipping
2N6504 TO-220AB
500 Units / Box
2N6504G TO-220AB
(Pb-Free)
2N6505 TO-220AB
2N6505G TO-220AB
(Pb-Free)
2N6505T TO-220AB
50 Units / Rail
2N6505TG TO-220AB
(Pb-Free)
2N6507 TO-220AB
500 Units / Box
2N6507G TO-220AB
(Pb-Free)
2N6507T TO-220AB
50 Units / Rail
2N6507TG TO-220AB
(Pb-Free)
2N6508 TO-220AB
500 Units / Box
2N6508G TO-220AB
(Pb-Free)
2N6508TG TO-220AB
(Pb-Free) 50 Units / Rail
2N6509 TO-220AB
500 Units / Box
2N6509G TO-220AB
(Pb-Free)
2N6509T TO-220AB
50 Units / Rail
2N6509TG TO-220AB
(Pb-Free)
2N6504 Series
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7
PACKAGE DIMENSIONS
TO-220AB
CASE 221A-07
ISSUE AA
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
A
K
L
V
G
D
N
Z
H
Q
FB
123
4
-T- SEATING
PLANE
S
R
J
U
TC
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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2N6504/D
PUBLICATION ORDERING INFORMATION
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