1N5807US, 1N5809US, 1N5811US and URS Available on commercial versions VOID-LESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS Qualified per MIL-PRF-19500/477 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This "Ultrafast Recovery" rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. The industry-recognized 6.0 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void-less glass construction using an internal "Category 1" metallurgical bond. These devices are available in both surface mount MELF and leaded package configurations. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages. Important: For the latest information, visit our website http://www.microsemi.com. "B" MELF Package (US) FEATURES * * * * * * * JEDEC registered surface mount equivalent of 1N5807, 1N5809, 1N5811 series. Void-less hermetically sealed glass package. Quadruple-layer passivation. Extremely robust construction. Internal "Category 1" metallurgical bonds. JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/477. RoHS compliant versions available (commercial grade only). "B" MELF Package (URS) APPLICATIONS / BENEFITS * * * * * * * Ultrafast recovery 6 amp rectifier series from 50 to 150 V. Military, space and other high-reliability applications. Switching power supplies or other applications requiring extremely fast switching & low forward loss. High forward surge current capability. Low thermal resistance. Controlled avalanche with peak reverse power capability. Inherently radiation hard as described in Microsemi MicroNote 050. Also available in: "B" Package (axial-leaded) 1N5807, 09 and 11 MAXIMUM RATINGS @ TA = 25 oC unless otherwise specified Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-End Cap Figure 1 Thermal Resistance 1N5807 Working Peak Reverse Voltage: 1N5809 1N5811 (3) Forward Surge Current Average Rectified Output Current o (1) @ TL = +75 C at 3/8 inch lead length Average Rectified Output-Current o (2) @ TA = +55 C at 3/8 inch lead length Capacitance @ V R = 10 V, f = 1 MHz; Vsig = 50 mV (p-p) (4) Reverse Recovery Time Solder Temperature @ 10 s Symbol Value TJ and TSTG R JEC R JX V RWM I FSM I O1 -65 to +175 6.5 52 50 100 150 125 6.0 Unit I O2 3.0 A CJ t rr TSP 60 30 260 pF ns o C o C C/W o C/W V o A A Notes: 1. I O1 is rated at T EC = 75 C. Derate at 60 mA/C for T EC above 75 C. o 2. I O2 is derated at 25 mA/C above T A = 55 C for PC boards where thermal resistance from mounting o point to ambient is sufficiently controlled where T J(max) 175 C is not exceeded. 3. T A = 25 oC @ I O = 3.0 A and V RWM for ten 8.3 ms surges at 1 minute intervals. 4. I F = 1.0 A, I RM = 1.0 A, I R(REC) = .0.10 A and di/dt = 100 A/s min. T4-LDS-0168-1, Rev. 1 (120776) (c)2012 Microsemi Corporation MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 5 1N5807US, 1N5809US, 1N5811US and URS MECHANICAL and PACKAGING * * * * * * * CASE: Hermetically sealed void-less hard glass with tungsten slugs. TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) over nickel plate over copper. MARKING: Body coated in blue with part number. POLARITY: Cathode indicated by band. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: 539 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5807 US (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Surface mount Package Type US = 2 Square end caps URS = 1 Square + 1 Round end cap JEDEC type number (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol V BR V RWM IO VF IR C t rr Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Average Rectified Output Current: Output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current occurs. ELECTRICAL CHARACTERISTICS @ TA = 25 C unless otherwise stated BREAKDOWN VOLTAGE (MIN.) @ 100 A V (BR) MAXIMUM FORWARD VOLTAGE @ 4 A (8.3 ms pulse) V FM TYPE 1N5807 1N5809 1N5811 Volts Volts 60 110 160 25 oC 0.875 0.875 0.875 125 oC 0.800 0.800 0.800 REVERSE CURRENT (MAX.) @ V RWM IR A 25 oC 125 oC 5 525 5 525 5 525 SURGE CURRENT (MAX) REVERSE RECOVERY TIME (MAX) I FSM t rr (Note 1) (Note 2) Amps 125 125 125 ns 30 30 30 NOTES: 1. T A = 25 oC @ I O = 3.0 A and V RWM for ten 8.3 ms surges at 1 minute intervals. 2. I F = 1.0 A, I RM = 1.0 A, I R(REC) = 0.10 A and di/dt = 100 A/s min. T4-LDS-0168-1, Rev. 1 (120776) (c)2012 Microsemi Corporation Page 2 of 5 1N5807US, 1N5809US, 1N5811US and URS Theta (oC/W) GRAPHS Heating Time (sec) PO (W) FIGURE 1 Maximum Thermal Impedance I O (A) FIGURE 2 Rectifier Power vs I O (Average Forward Current) T4-LDS-0168-1, Rev. 1 (120776) (c)2012 Microsemi Corporation Page 3 of 5 1N5807US, 1N5809US, 1N5811US and URS Thermal Resistance (oC/W) GRAPHS (continued) Pad Area per Pad (sq in) FIGURE 3 Thermal Resistance vs FR4 Pad Area At Ambient IF (V) PCB horizontal (for each pad) with 1, 2, and 3 oz copper V F (V) FIGURE 4 Forward Voltage vs Forward Current T4-LDS-0168-1, Rev. 1 (120776) (c)2012 Microsemi Corporation Page 4 of 5 1N5807US, 1N5809US, 1N5811US and URS PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimensions are pre-solder dip. 4. Minimum clearance of glass body to mounting surface on all orientations. 5. Cathode marking to be either in color band, three dots spaced equally or a color dot on the face of the end tab. 6. Color dots will be .020 inch (0.51 mm) diameter minimum and those on the face of the end tab shall not lie within .020 inch (0.51 mm) of the mounting surface. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 8. On "URS" one end cap shall be square and the other end cap shall be round. Ltr BD BL ECT S DIMENSIONS INCH MILLIMETERS Min Max Min Max .137 .148 3.48 3.76 .200 .225 5.08 5.72 .019 .028 0.48 0.71 .003 0.08 Notes 8 8 PAD LAYOUT DIM A B C INCH 0.288 0.070 0.155 MILLIMETERS 7.32 1.78 3.94 NOTE: If mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement. 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