NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0135A DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR93___ __ __
└ Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
│
│
│
│
│
└ Package Type
/61 = TO-61
│
│
│
│
│
│
│
│
└
Device Type ( VRWM )
3 = 300V
4 = 400V
5 = 500V
6 = 600V
SDR933/61
thru
SDR936/61
30 Amp
ULTRA FAST RECTIFIER
300 – 600 Volts
35 nsec
FEATURES:
• Ultra Fast Reverse Recovery Time: 35 nsec Max
• Isolated Package
• Reverse Voltage to 600 Volts
• Low Reverse Leakage
• Hermetically Sealed
• Single Chip Construction
• 200°C Operating Temperature
• Ultrasonic Aluminum Wire Bonds
• TX, TXV, and S-Level Screening Available2/
MAXIMUM RATINGS 3/
RATING SYMBOL VALUE UNIT
Peak Repetitive Reverse Voltage
DC Blocking Voltage
(IR = 100μA)
SDR933/61
SDR934/61
SDR935/61
SDR936/61
VRM(rep)
VR
300
400
500
600
Volts
RMS Reverse Voltage
SDR932/61
SDR933/61
SDR934/61
SDR935/61
Vr
140
210
280
350
Volts
Half Wave Rectified Forward Current, Averaged Over Full Cycle
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C) IO 30 Amps
Peak Repetitive Forward Current
(TC = 55°C, 8.3 ms pulse, allow junction to reach equilibrium between pulses) IFM(rep) 120 Amps
Peak Surge Current
(TC = 25°C, half sinewave 8.3 ms pulse or equivalent DC) IFSM 300 Amps
Operating & Storage Temperature TOP and TSTG -65 to +175 °C
Thermal Resistance Junction to Case RθJC 1.5 °C/W
NOTES:
1/ For Ordering Information, Price, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
TO-61