Part NO. :ATIR0811S SUBMINIATURE, HIGH SENSITIVITY PHOTOINTERRUPTER *Features Compact and thin. Visible light cut-off type. High sensitivity. *Applications Cassette tape recorders,VCRs. Floppy disk drives. Various microcomputerized control equipment. ? ? UNIT : MM[INCH] TOLERANCE : 0.25[ 0.01] UNLESS OTHERWISE NOTED. *Absolute Maximum Ratings(Ta=25 C) Sy m b o l Par am et er Rat in g Un it Forward Current IF 50 mA Reverse voltage VR 6 V Power dissipation P 75 mW Collector power dissipation PC 75 mW Collector current IC 20 mA Collector-emitter voltage VCEO 35 V Emitter-collector voltage VECO 6 V Operating temperature Topr -25~+85 C Storage temperature Tstg -40~+100 C Soldering temperature Tsol 260 C Input Output (1/16 inch from body for 5 seconds) SPEC NO: DSAC3112 APPROVED : J. Lu REV NO: V.1 CHECKED :Tracy Deng DATE:JAN/24/2003 DRAWN:D.L.HUANG PAGE: 1 OF 4 Part NO. :ATIR0811S !Electro-optical Characteristics Par am et er Sy m b o l Co n d it io n s VF I F =20mA VR=6V Forward voltage Input Reverse current Output IR IC E O VCE =20V *1 Collector Current IC VCE=2V, I F =4mA IL E A K VCE=2V, I F =4mA Response time Rise time tr Fall time tf Ty p . Max . Un it 1.0 1.2 1.4 V ___ ___ 10 mA 10-9 10-7 A 400 mA 0.1 V 20 10 0 mSec 20 10 0 mSec ___ Collector dark current *2 Leak Current Transfer characteristics Min . VCE=2V, I C =100uA RL=1KW,d=1mm ___ 10 ___ __ _ ___ ___ *1 The condition and arrangement of the reflective object are shown below. *2 Without reflective object. !Classification table of radiant flux Rank mark BIN1 BIN2 BIN3 BIN4 BIN5 BIN6 I C (A) 10~30 31~60 61~90 91~125 126~200 201~400 25J 50J 0J -25J 75J 10 2000 Collector current I + (uA) Forward current I. (mA) 100 1 V+-=2V 1000 500 0 0 0.5 1 1.5 0 2 Forw ard voltage V . (V) 500 10mA 400 7mA 300 200 4mA 100 2mA 0 0 2 4 6 8 10 12 Collector-emitter Voltage VCE(V) SPEC NO: DSAC3112 APPROVED : J. Lu 20 30 40 50 125 I.=15mA Ta= 25J 10 Forward current I. (mA) Relative collector current Ic (% Collector Current Ic(uA) 700 600 Ta=25J 1500 REV NO: V.1 CHECKED :Tracy Deng 100 75 50 IF=4mA V CE=2V 25 0 -25 0 25 50 75 100 Ambient temperature Ta(J J) DATE:JAN/24/2003 DRAWN:D.L.HUANG PAGE: 2 OF 4 Part NO. :ATIR0811S Response time (us) 10000 V +- =2V I+=100uA Ta=25J 1000 tB tH 100 t@ tI 10 J@ JH JI JB 1 0.1 0.1 1 10 100 1000 1.E-06 V+-=20V Relative collector current(%) Collector dark current ICEO (A) Load resistance R L (K[ [) 1.E-07 1.E-08 1.E-09 1.E-10 0 25 50 75 100 J) Ambient temperature Ta(J I.=4mA V+-=2V Ta=25J & $ " ! " Distance between sensor and Al evaporation glass d(mm) # I. =4mA 100 V+-=2V d=1mm Ta=25J 80 60 40 20 0 -3 -2 -1 0 1 2 3 4 5 6 Card moving distance 1 (mm) Relative collector current(%) Relative collector current(%) 100 I.=4mA V+- =2V d=1mm Ta=25J 80 60 40 20 0 -2 -1 0 1 2 3 4 5 6 7 Card moving distance 1 (mm) SPEC NO: DSAC3112 APPROVED : J. Lu REV NO: V.1 CHECKED :Tracy Deng DATE:JAN/24/2003 DRAWN:D.L.HUANG PAGE: 3 OF 4 Part NO. :ATIR0811S @ Reflow Soldering Profile SPEC NO: DSAC3112 APPROVED : J. Lu REV NO: V.1 CHECKED :Tracy Deng DATE:JAN/24/2003 DRAWN:D.L.HUANG PAGE: 4 OF 4