Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol VDSS ID Value Units Drain-to-Source Voltage Characteristic 60 V Continuous Drain Current (TC=25) 200 Continuous Drain Current (TC=100) 110 IDM Drain Current-Pulsed VGS PD TJ , TSTG TL mA 1000 mA Gate-to-Source Voltage 30 V Total Power Dissipation (TC=25) 400 mW Linear Derating Factor 3.2 mW/ Operating Junction and - 55 to +150 Storage Temperature Range Maximum Lead Temp. for Soldering 300 Purposes, 1/8? from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units RJA Junction-to-Ambient -- 312.5 /W Rev. A N-CHANNEL Small Signal MOSFET 2N7000BU/2N7000TA Electrical Characteristics (TC=25 unless otherwise specified) Min. Typ. Max. Units Symbol Characteristic BVDSS Drain-Source Breakdown Voltage VGS(th) IGSS IDSS RDS(on) Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source 60 -- -- 0.3 -- 3.9 0.4 -- 2.2 -- -- 100 VGS=15V VGS=-15V -- -100 -- 250 -- -- 1000 -- -- 5.0 VGS=10V,ID=0.5A 0.1 0.3 -- S VDS=15V,ID=0.5A gfs Forward Transconductance Ciss Input Capacitance -- 30 -- Coss Output Capacitance -- 12 -- Crss Reverse Transfer Capacitance -- 3.0 -- td(on) Turn-On Delay Time -- -- 10 Rise Time -- -- 10 Turn-Off Delay Time -- -- 10 Fall Time -- -- 10 tf nA VDS= VGS,ID=1mA -- tr V VGS=0V,ID=250A VDS= VGS,ID=250A -- On-State Resistance td(off) V Test Condition A pF ns Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature Pulse Test : Pulse Width = 250s, Duty Cycle 2% Essentially Independent of Operating Temperature VDS=60V VDS=45V,TC=125 VGS=0V,VDS=25V, f =1MHz VDD=30V,ID=0.5A, RG=15