K10P32M50SF0
K10 Sub-Family
Supports the following:
MK10DN32VFM5, MK10DX32VFM5,
MK10DN64VFM5, MK10DX64VFM5,
MK10DN128VFM5, MK10DX128VFM5
Features
•Operating Characteristics
–Voltage range: 1.71 to 3.6 V
– Flash write voltage range: 1.71 to 3.6 V
– Temperature range (ambient): -40 to 105°C
•Performance
– Up to 50 MHz ARM Cortex-M4 core with DSP
instructions delivering 1.25 Dhrystone MIPS per
MHz
•Memories and memory interfaces
– Up to 128 KB program flash.
– Up to 32 KB FlexNVM on FlexMemory devices
– 2 KB FlexRAM on FlexMemory devices
– Up to 16 KB RAM
– Serial programming interface (EzPort)
•Clocks
– 3 to 32 MHz crystal oscillator
– 32 kHz crystal oscillator
– Multi-purpose clock generator
•System peripherals
– Multiple low-power modes to provide power
optimization based on application requirements
– 4-channel DMA controller, supporting up to 41
request sources
– External watchdog monitor
– Software watchdog
– Low-leakage wakeup unit
•Security and integrity modules
– Hardware CRC module to support fast cyclic
redundancy checks
– 128-bit unique identification (ID) number per chip
•Analog modules
– 16-bit SAR ADC
– Two analog comparators (CMP) containing a 6-bit
DAC and programmable reference input
•Timers
– Programmable delay block
– Eight-channel motor control/general purpose/PWM
timer
– Two-channel quadrature decoder/general purpose
timer
– Periodic interrupt timers
– 16-bit low-power timer
– Carrier modulator transmitter
– Real-time clock
•Communication interfaces
– SPI module
– I2C module
– Three UART modules
– I2S module
Freescale Semiconductor Document Number: K10P32M50SF0
Data Sheet: Technical Data Rev. 4 5/2012
Freescale reserves the right to change the detail specifications as may be
required to permit improvements in the design of its products.
© 2011–2012 Freescale Semiconductor, Inc.
Table of Contents
1 Ordering parts...........................................................................3
1.1 Determining valid orderable parts......................................3
2 Part identification......................................................................3
2.1 Description.........................................................................3
2.2 Format...............................................................................3
2.3 Fields.................................................................................3
2.4 Example............................................................................4
3Terminology and guidelines......................................................4
3.1 Definition: Operating requirement......................................4
3.2 Definition: Operating behavior...........................................5
3.3 Definition: Attribute............................................................5
3.4 Definition: Rating...............................................................6
3.5 Result of exceeding a rating..............................................6
3.6 Relationship between ratings and operating
requirements......................................................................6
3.7 Guidelines for ratings and operating requirements............7
3.8 Definition: Typical value.....................................................7
3.9 Typical value conditions....................................................8
4Ratings......................................................................................9
4.1 Thermal handling ratings...................................................9
4.2 Moisture handling ratings..................................................9
4.3 ESD handling ratings.........................................................9
4.4 Voltage and current operating ratings...............................9
5General.....................................................................................10
5.1 AC electrical characteristics..............................................10
5.2 Nonswitching electrical specifications...............................10
5.2.1 Voltage and current operating requirements.........10
5.2.2 LVD and POR operating requirements.................11
5.2.3 Voltage and current operating behaviors..............12
5.2.4 Power mode transition operating behaviors..........13
5.2.5 Power consumption operating behaviors..............14
5.2.6 EMC radiated emissions operating behaviors.......18
5.2.7 Designing with radiated emissions in mind...........19
5.2.8 Capacitance attributes..........................................19
5.3 Switching specifications.....................................................19
5.3.1 Device clock specifications...................................19
5.3.2 General switching specifications...........................20
5.4 Thermal specifications.......................................................21
5.4.1 Thermal operating requirements...........................21
5.4.2 Thermal attributes.................................................21
6 Peripheral operating requirements and behaviors....................22
6.1 Core modules....................................................................22
6.1.1 JTAG electricals....................................................22
6.2 System modules................................................................25
6.3 Clock modules...................................................................25
6.3.1 MCG specifications...............................................25
6.3.2 Oscillator electrical specifications.........................27
6.3.3 32 kHz Oscillator Electrical Characteristics...........29
6.4 Memories and memory interfaces.....................................30
6.4.1 Flash electrical specifications................................30
6.4.2 EzPort Switching Specifications............................34
6.5 Security and integrity modules..........................................35
6.6 Analog...............................................................................35
6.6.1 ADC electrical specifications.................................35
6.6.2 CMP and 6-bit DAC electrical specifications.........40
6.7 Timers................................................................................43
6.8 Communication interfaces.................................................43
6.8.1 DSPI switching specifications (limited voltage
range)....................................................................43
6.8.2 DSPI switching specifications (full voltage range).45
6.8.3 I2C switching specifications..................................47
6.8.4 UART switching specifications..............................47
6.8.5 I2S/SAI Switching Specifications..........................47
6.9 Human-machine interfaces (HMI)......................................51
6.9.1 TSI electrical specifications...................................51
7 Dimensions...............................................................................53
7.1 Obtaining package dimensions.........................................53
8 Pinout........................................................................................53
8.1 K10 Signal Multiplexing and Pin Assignments..................53
8.2 K10 Pinouts.......................................................................54
9 Revision History........................................................................55
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
2 Freescale Semiconductor, Inc.
1 Ordering parts
1.1 Determining valid orderable parts
Valid orderable part numbers are provided on the web. To determine the orderable part
numbers for this device, go to http://www.freescale.com and perform a part number
search for the following device numbers: PK10 and MK10 .
2 Part identification
2.1 Description
Part numbers for the chip have fields that identify the specific part. You can use the
values of these fields to determine the specific part you have received.
2.2 Format
Part numbers for this device have the following format:
Q K## A M FFF R T PP CC N
2.3 Fields
This table lists the possible values for each field in the part number (not all combinations
are valid):
Field Description Values
Q Qualification status • M = Fully qualified, general market flow
• P = Prequalification
K## Kinetis family • K10
A Key attribute • D = Cortex-M4 w/ DSP
• F = Cortex-M4 w/ DSP and FPU
M Flash memory type • N = Program flash only
• X = Program flash and FlexMemory
Table continues on the next page...
Ordering parts
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 3
Field Description Values
FFF Program flash memory size • 32 = 32 KB
• 64 = 64 KB
• 128 = 128 KB
• 256 = 256 KB
• 512 = 512 KB
• 1M0 = 1 MB
R Silicon revision • Z = Initial
• (Blank) = Main
• A = Revision after main
T Temperature range (°C) • V = –40 to 105
• C = –40 to 85
PP Package identifier • FM = 32 QFN (5 mm x 5 mm)
• FT = 48 QFN (7 mm x 7 mm)
• LF = 48 LQFP (7 mm x 7 mm)
• LH = 64 LQFP (10 mm x 10 mm)
• MP = 64 MAPBGA (5 mm x 5 mm)
• LK = 80 LQFP (12 mm x 12 mm)
• MB = 81 MAPBGA (8 mm x 8 mm)
• LL = 100 LQFP (14 mm x 14 mm)
• ML = 104 MAPBGA (8 mm x 8 mm)
• MC = 121 MAPBGA (8 mm x 8 mm)
• LQ = 144 LQFP (20 mm x 20 mm)
• MD = 144 MAPBGA (13 mm x 13 mm)
• MJ = 256 MAPBGA (17 mm x 17 mm)
CC Maximum CPU frequency (MHz) • 5 = 50 MHz
• 7 = 72 MHz
• 10 = 100 MHz
• 12 = 120 MHz
• 15 = 150 MHz
N Packaging type • R = Tape and reel
• (Blank) = Trays
2.4 Example
This is an example part number:
MK10DN32VFM5
3 Terminology and guidelines
Terminology and guidelines
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
4 Freescale Semiconductor, Inc.
3.1 Definition: Operating requirement
An operating requirement is a specified value or range of values for a technical
characteristic that you must guarantee during operation to avoid incorrect operation and
possibly decreasing the useful life of the chip.
3.1.1 Example
This is an example of an operating requirement, which you must meet for the
accompanying operating behaviors to be guaranteed:
Symbol Description Min. Max. Unit
VDD 1.0 V core supply
voltage
0.9 1.1 V
3.2 Definition: Operating behavior
An operating behavior is a specified value or range of values for a technical
characteristic that are guaranteed during operation if you meet the operating requirements
and any other specified conditions.
3.2.1 Example
This is an example of an operating behavior, which is guaranteed if you meet the
accompanying operating requirements:
Symbol Description Min. Max. Unit
IWP Digital I/O weak pullup/
pulldown current
10 130 µA
3.3 Definition: Attribute
An attribute is a specified value or range of values for a technical characteristic that are
guaranteed, regardless of whether you meet the operating requirements.
Terminology and guidelines
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 5
3.3.1 Example
This is an example of an attribute:
Symbol Description Min. Max. Unit
CIN_D Input capacitance:
digital pins
— 7 pF
3.4 Definition: Rating
A rating is a minimum or maximum value of a technical characteristic that, if exceeded,
may cause permanent chip failure:
•Operating ratings apply during operation of the chip.
•Handling ratings apply when the chip is not powered.
3.4.1 Example
This is an example of an operating rating:
Symbol Description Min. Max. Unit
VDD 1.0 V core supply
voltage
–0.3 1.2 V
3.5 Result of exceeding a rating
40
30
20
10
0
Measured characteristic
Operating rating
Failures in time (ppm)
The likelihood of permanent chip failure increases rapidly as
soon as a characteristic begins to exceed one of its operating ratings.
Terminology and guidelines
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
6 Freescale Semiconductor, Inc.
3.6 Relationship between ratings and operating requirements
–∞
- No permanent failure
- Correct operation
Normal operating range
Fatal range
Expected permanent failure
Fatal range
Expected permanent failure
∞
Operating rating (max.)
Operating requirement (max.)
Operating requirement (min.)
Operating rating (min.)
Operating (power on)
Degraded operating range Degraded operating range
–∞
No permanent failure
Handling range
Fatal range
Expected permanent failure
Fatal range
Expected permanent failure
∞
Handling rating (max.)
Handling rating (min.)
Handling (power off)
- No permanent failure
- Possible decreased life
- Possible incorrect operation
- No permanent failure
- Possible decreased life
- Possible incorrect operation
3.7 Guidelines for ratings and operating requirements
Follow these guidelines for ratings and operating requirements:
• Never exceed any of the chip’s ratings.
• During normal operation, don’t exceed any of the chip’s operating requirements.
• If you must exceed an operating requirement at times other than during normal
operation (for example, during power sequencing), limit the duration as much as
possible.
3.8 Definition: Typical value
A typical value is a specified value for a technical characteristic that:
• Lies within the range of values specified by the operating behavior
• Given the typical manufacturing process, is representative of that characteristic
during operation when you meet the typical-value conditions or other specified
conditions
Typical values are provided as design guidelines and are neither tested nor guaranteed.
Terminology and guidelines
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 7
3.8.1 Example 1
This is an example of an operating behavior that includes a typical value:
Symbol Description Min. Typ. Max. Unit
IWP Digital I/O weak
pullup/pulldown
current
10 70 130 µA
3.8.2 Example 2
This is an example of a chart that shows typical values for various voltage and
temperature conditions:
0.90 0.95 1.00 1.05 1.10
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
150 °C
105 °C
25 °C
–40 °C
VDD (V)
I(μA)
DD_STOP
TJ
3.9 Typical value conditions
Typical values assume you meet the following conditions (or other conditions as
specified):
Symbol Description Value Unit
TAAmbient temperature 25 °C
VDD 3.3 V supply voltage 3.3 V
Terminology and guidelines
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
8 Freescale Semiconductor, Inc.
4 Ratings
4.1 Thermal handling ratings
Symbol Description Min. Max. Unit Notes
TSTG Storage temperature –55 150 °C 1
TSDR Solder temperature, lead-free — 260 °C 2
1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life.
2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
4.2 Moisture handling ratings
Symbol Description Min. Max. Unit Notes
MSL Moisture sensitivity level — 3 — 1
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
4.3 ESD handling ratings
Symbol Description Min. Max. Unit Notes
VHBM Electrostatic discharge voltage, human body model -2000 +2000 V 1
VCDM Electrostatic discharge voltage, charged-device model -500 +500 V 2
ILAT Latch-up current at ambient temperature of 105°C -100 +100 mA
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human Body
Model (HBM).
2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for
Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.
4.4 Voltage and current operating ratings
Symbol Description Min. Max. Unit
VDD Digital supply voltage –0.3 3.8 V
Table continues on the next page...
Ratings
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 9
Symbol Description Min. Max. Unit
IDD Digital supply current — 155 mA
VDIO Digital input voltage (except RESET, EXTAL, and XTAL) –0.3 VDD + 0.3 V
VAIO Analog1, RESET, EXTAL, and XTAL input voltage –0.3 VDD + 0.3 V
IDMaximum current single pin limit (applies to all port pins) –25 25 mA
VDDA Analog supply voltage VDD – 0.3 VDD + 0.3 V
VBAT RTC battery supply voltage –0.3 3.8 V
1. Analog pins are defined as pins that do not have an associated general purpose I/O port function.
5 General
5.1 AC electrical characteristics
Unless otherwise specified, propagation delays are measured from the 50% to the 50%
point, and rise and fall times are measured at the 20% and 80% points, as shown in the
following figure.
Figure 1. Input signal measurement reference
All digital I/O switching characteristics assume:
1. output pins
• have CL=30pF loads,
• are configured for fast slew rate (PORTx_PCRn[SRE]=0), and
• are configured for high drive strength (PORTx_PCRn[DSE]=1)
2. input pins
• have their passive filter disabled (PORTx_PCRn[PFE]=0)
5.2 Nonswitching electrical specifications
General
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
10 Freescale Semiconductor, Inc.
5.2.1 Voltage and current operating requirements
Table 1. Voltage and current operating requirements
Symbol Description Min. Max. Unit Notes
VDD Supply voltage 1.71 3.6 V
VDDA Analog supply voltage 1.71 3.6 V
VDD – VDDA VDD-to-VDDA differential voltage –0.1 0.1 V
VSS – VSSA VSS-to-VSSA differential voltage –0.1 0.1 V
VBAT RTC battery supply voltage 1.71 3.6 V
VIH Input high voltage
• 2.7 V ≤ VDD ≤ 3.6 V
• 1.7 V ≤ VDD ≤ 2.7 V
0.7 × VDD
0.75 × VDD
—
—
V
V
VIL Input low voltage
• 2.7 V ≤ VDD ≤ 3.6 V
• 1.7 V ≤ VDD ≤ 2.7 V
—
—
0.35 × VDD
0.3 × VDD
V
V
VHYS Input hysteresis 0.06 × VDD — V
IICIO I/O pin DC injection current — single pin
• VIN < VSS-0.3V (Negative current injection)
• VIN > VDD+0.3V (Positive current injection)
-3
—
—
+3
mA
1
IICcont Contiguous pin DC injection current —regional limit,
includes sum of negative injection currents or sum of
positive injection currents of 16 contiguous pins
• Negative current injection
• Positive current injection
-25
—
—
+25
mA
VRAM VDD voltage required to retain RAM 1.2 — V
VRFVBAT VBAT voltage required to retain the VBAT register file VPOR_VBAT — V
1. All analog pins are internally clamped to VSS and VDD through ESD protection diodes. If VIN is greater than VAIO_MIN
(=VSS-0.3V) and VIN is less than VAIO_MAX(=VDD+0.3V) is observed, then there is no need to provide current limiting
resistors at the pads. If these limits cannot be observed then a current limiting resistor is required. The negative DC
injection current limiting resistor is calculated as R=(VAIO_MIN-VIN)/|IIC|. The positive injection current limiting resistor is
calcualted as R=(VIN-VAIO_MAX)/|IIC|. Select the larger of these two calculated resistances.
5.2.2 LVD and POR operating requirements
Table 2. VDD supply LVD and POR operating requirements
Symbol Description Min. Typ. Max. Unit Notes
VPOR Falling VDD POR detect voltage 0.8 1.1 1.5 V
Table continues on the next page...
General
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 11
Table 2. VDD supply LVD and POR operating requirements (continued)
Symbol Description Min. Typ. Max. Unit Notes
VLVDH Falling low-voltage detect threshold — high
range (LVDV=01)
2.48 2.56 2.64 V
VLVW1H
VLVW2H
VLVW3H
VLVW4H
Low-voltage warning thresholds — high range
• Level 1 falling (LVWV=00)
• Level 2 falling (LVWV=01)
• Level 3 falling (LVWV=10)
• Level 4 falling (LVWV=11)
2.62
2.72
2.82
2.92
2.70
2.80
2.90
3.00
2.78
2.88
2.98
3.08
V
V
V
V
1
VHYSH Low-voltage inhibit reset/recover hysteresis —
high range
— ±80 — mV
VLVDL Falling low-voltage detect threshold — low range
(LVDV=00)
1.54 1.60 1.66 V
VLVW1L
VLVW2L
VLVW3L
VLVW4L
Low-voltage warning thresholds — low range
• Level 1 falling (LVWV=00)
• Level 2 falling (LVWV=01)
• Level 3 falling (LVWV=10)
• Level 4 falling (LVWV=11)
1.74
1.84
1.94
2.04
1.80
1.90
2.00
2.10
1.86
1.96
2.06
2.16
V
V
V
V
1
VHYSL Low-voltage inhibit reset/recover hysteresis —
low range
— ±60 — mV
VBG Bandgap voltage reference 0.97 1.00 1.03 V
tLPO Internal low power oscillator period — factory
trimmed
900 1000 1100 μs
1. Rising thresholds are falling threshold + hysteresis voltage
Table 3. VBAT power operating requirements
Symbol Description Min. Typ. Max. Unit Notes
VPOR_VBAT Falling VBAT supply POR detect voltage 0.8 1.1 1.5 V
General
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
12 Freescale Semiconductor, Inc.
5.2.3 Voltage and current operating behaviors
Table 4. Voltage and current operating behaviors
Symbol Description Min. Max. Unit Notes
VOH Output high voltage — high drive strength
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = - 9 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = -3 mA
VDD – 0.5
VDD – 0.5
—
—
V
V
Output high voltage — low drive strength
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = -2 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = -0.6 mA
VDD – 0.5
VDD – 0.5
—
—
V
V
IOHT Output high current total for all ports — 100 mA
VOL Output low voltage — high drive strength
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 9 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 3 mA
—
—
0.5
0.5
V
V
Output low voltage — low drive strength
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 2 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 0.6 mA
—
—
0.5
0.5
V
V
IOLT Output low current total for all ports — 100 mA
IIN Input leakage current (per pin)
• @ full temperature range
• @ 25 °C
—
—
1.0
0.1
μA
μA
1
IOZ Hi-Z (off-state) leakage current (per pin) — 1 μA
IOZ Total Hi-Z (off-state) leakage current (all input pins) — 4 μA
RPU Internal pullup resistors 22 50 kΩ 2
RPD Internal pulldown resistors 22 50 kΩ 3
1. Tested by ganged leakage method
2. Measured at Vinput = VSS
3. Measured at Vinput = VDD
5.2.4 Power mode transition operating behaviors
All specifications except tPOR, and VLLSx→RUN recovery times in the following table
assume this clock configuration:
• CPU and system clocks = 50 MHz
• Bus clock = 50 MHz
• Flash clock = 25 MHz
General
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 13
Table 5. Power mode transition operating behaviors
Symbol Description Min. Max. Unit Notes
tPOR After a POR event, amount of time from the point VDD
reaches 1.71 V to execution of the first instruction
across the operating temperature range of the chip.
— 300 μs 1
• VLLS0 → RUN — 130 μs
• VLLS1 → RUN — 130 μs
• VLLS2 → RUN — 70 μs
• VLLS3 → RUN — 70 μs
• LLS → RUN — 6 μs
• VLPS → RUN — 5.2 μs
• STOP → RUN — 5.2 μs
1. Normal boot (FTFL_OPT[LPBOOT]=1)
5.2.5 Power consumption operating behaviors
Table 6. Power consumption operating behaviors
Symbol Description Min. Typ. Max. Unit Notes
IDDA Analog supply current — — See note mA 1
IDD_RUN Run mode current — all peripheral clocks
disabled, code executing from flash
• @ 1.8V
• @ 3.0V
—
—
13.7
13.9
15.1
15.3
mA
mA
2
IDD_RUN Run mode current — all peripheral clocks
enabled, code executing from flash
• @ 1.8V
• @ 3.0V
• @ 25°C
• @ 125°C
—
—
—
16.1
16.3
16.7
18.2
17.7
18.4
mA
mA
mA
3, 4
IDD_WAIT Wait mode high frequency current at 3.0 V — all
peripheral clocks disabled
— 7.5 8.4 mA 2
IDD_WAIT Wait mode reduced frequency current at 3.0 V
— all peripheral clocks disabled
— 5.6 6.4 mA 5
Table continues on the next page...
General
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
14 Freescale Semiconductor, Inc.
Table 6. Power consumption operating behaviors (continued)
Symbol Description Min. Typ. Max. Unit Notes
IDD_VLPR Very-low-power run mode current at 3.0 V — all
peripheral clocks disabled
— 867 — μA 6
IDD_VLPR Very-low-power run mode current at 3.0 V — all
peripheral clocks enabled
— 1.1 — mA 7
IDD_VLPW Very-low-power wait mode current at 3.0 V — 509 — μA 8
IDD_STOP Stop mode current at 3.0 V
• @ –40 to 25°C
• @ 70°C
• @ 105°C
—
—
—
310
384
629
426
458
1100
μA
μA
μA
IDD_VLPS Very-low-power stop mode current at 3.0 V
• @ –40 to 25°C
• @ 70°C
• @ 105°C
—
—
—
3.5
20.7
85
22.6
52.9
220
μA
μA
μA
IDD_LLS Low leakage stop mode current at 3.0 V
• @ –40 to 25°C
• @ 70°C
• @ 105°C
—
—
—
2.1
7.7
32.2
3.7
43.1
68
μA
μA
μA
IDD_VLLS3 Very low-leakage stop mode 3 current at 3.0 V
• @ –40 to 25°C
• @ 70°C
• @ 105°C
—
—
—
1.5
4.8
20
2.9
22.5
37.8
μA
μA
μA
IDD_VLLS2 Very low-leakage stop mode 2 current at 3.0 V
• @ –40 to 25°C
• @ 70°C
• @ 105°C
—
—
—
1.4
4.1
17.3
2.8
19.2
32.4
μA
μA
μA
IDD_VLLS1 Very low-leakage stop mode 1 current at 3.0 V
• @ –40 to 25°C
• @ 70°C
• @ 105°C
—
—
—
0.678
2.8
13.6
1.3
13.6
24.5
μA
μA
μA
IDD_VLLS0 Very low-leakage stop mode 0 current at 3.0 V
with POR detect circuit enabled
• @ –40 to 25°C
• @ 70°C
• @ 105°C
—
—
—
0.367
2.4
13.2
1.0
13.3
24.1
μA
μA
μA
Table continues on the next page...
General
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 15
Table 6. Power consumption operating behaviors (continued)
Symbol Description Min. Typ. Max. Unit Notes
IDD_VLLS0 Very low-leakage stop mode 0 current at 3.0 V
with POR detect circuit disabled
• @ –40 to 25°C
• @ 70°C
• @ 105°C
—
—
—
0.176
2.2
13
0.859
13.1
23.9
μA
μA
μA
IDD_VBAT Average current with RTC and 32kHz disabled at
3.0 V
• @ –40 to 25°C
• @ 70°C
• @ 105°C
—
—
—
0.19
0.49
2.2
0.22
0.64
3.2
μA
μA
μA
IDD_VBAT Average current when CPU is not accessing
RTC registers
• @ 1.8V
• @ –40 to 25°C
• @ 70°C
• @ 105°C
• @ 3.0V
• @ –40 to 25°C
• @ 70°C
• @ 105°C
—
—
—
—
—
—
0.57
0.90
2.4
0.67
1.0
2.7
0.67
1.2
3.5
0.94
1.4
3.9
μA
μA
μA
μA
μA
μA
9
1. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device. See
each module's specification for its supply current.
2. 50MHz core and system clock, 25MHz bus clock, and 25MHz flash clock . MCG configured for FEI mode. All peripheral
clocks disabled.
3. 50MHz core and system clock, 25MHz bus clock, and 25MHz flash clock. MCG configured for FEI mode. All peripheral
clocks enabled, and peripherals are in active operation.
4. Max values are measured with CPU executing DSP instructions
5. 25MHz core and system clock, 25MHz bus clock, and 12.5MHz flash clock. MCG configured for FEI mode.
6. 4 MHz core, system, and bus clock and 1MHz flash clock. MCG configured for BLPE mode. All peripheral clocks disabled.
Code executing from flash.
7. 4 MHz core, system, and bus clock and 1MHz flash clock. MCG configured for BLPE mode. All peripheral clocks enabled
but peripherals are not in active operation. Code executing from flash.
8. 4 MHz core, system, and bus clock and 1MHz flash clock. MCG configured for BLPE mode. All peripheral clocks disabled.
9. Includes 32kHz oscillator current and RTC operation.
5.2.5.1 Diagram: Typical IDD_RUN operating behavior
The following data was measured under these conditions:
• MCG in FBE mode
• No GPIOs toggled
• Code execution from flash with cache enabled
• For the ALLOFF curve, all peripheral clocks are disabled except FTFL
General
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
16 Freescale Semiconductor, Inc.
Figure 2. Run mode supply current vs. core frequency
General
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 17
Figure 3. VLPR mode supply current vs. core frequency
5.2.6 EMC radiated emissions operating behaviors
Table 7. EMC radiated emissions operating behaviors for 64LQFP
Symbol Description Frequency
band (MHz)
Typ. Unit Notes
VRE1 Radiated emissions voltage, band 1 0.15–50 19 dBμV 1 , 2
VRE2 Radiated emissions voltage, band 2 50–150 21 dBμV
VRE3 Radiated emissions voltage, band 3 150–500 19 dBμV
VRE4 Radiated emissions voltage, band 4 500–1000 11 dBμV
VRE_IEC IEC level 0.15–1000 L — 2, 3
1. Determined according to IEC Standard 61967-1, Integrated Circuits - Measurement of Electromagnetic Emissions, 150
kHz to 1 GHz Part 1: General Conditions and Definitions and IEC Standard 61967-2, Integrated Circuits - Measurement of
Electromagnetic Emissions, 150 kHz to 1 GHz Part 2: Measurement of Radiated Emissions—TEM Cell and Wideband
TEM Cell Method. Measurements were made while the microcontroller was running basic application code. The reported
General
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
18 Freescale Semiconductor, Inc.
emission level is the value of the maximum measured emission, rounded up to the next whole number, from among the
measured orientations in each frequency range.
2. VDD = 3.3 V, TA = 25 °C, fOSC = 12 MHz (crystal), fSYS = 48 MHz, fBUS = 48MHz
3. Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband
TEM Cell Method
5.2.7 Designing with radiated emissions in mind
To find application notes that provide guidance on designing your system to minimize
interference from radiated emissions:
1. Go to http://www.freescale.com.
2. Perform a keyword search for “EMC design.”
5.2.8 Capacitance attributes
Table 8. Capacitance attributes
Symbol Description Min. Max. Unit
CIN_A Input capacitance: analog pins — 7 pF
CIN_D Input capacitance: digital pins — 7 pF
5.3 Switching specifications
5.3.1 Device clock specifications
Table 9. Device clock specifications
Symbol Description Min. Max. Unit Notes
Normal run mode
fSYS System and core clock — 50 MHz
fBUS Bus clock — 50 MHz
fFLASH Flash clock — 25 MHz
fLPTMR LPTMR clock — 25 MHz
VLPR mode1
fSYS System and core clock — 4 MHz
fBUS Bus clock — 4 MHz
fFLASH Flash clock — 1 MHz
fERCLK External reference clock — 16 MHz
Table continues on the next page...
General
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 19
Table 9. Device clock specifications (continued)
Symbol Description Min. Max. Unit Notes
fLPTMR_pin LPTMR clock — 25 MHz
fLPTMR_ERCLK LPTMR external reference clock — 16 MHz
fI2S_MCLK I2S master clock — 12.5 MHz
fI2S_BCLK I2S bit clock — 4 MHz
1. The frequency limitations in VLPR mode here override any frequency specification listed in the timing specification for any
other module.
5.3.2 General switching specifications
These general purpose specifications apply to all signals configured for GPIO, UART,
CMT, and I2C signals.
Table 10. General switching specifications
Symbol Description Min. Max. Unit Notes
GPIO pin interrupt pulse width (digital glitch filter
disabled) — Synchronous path
1.5 — Bus clock
cycles
1, 2
GPIO pin interrupt pulse width (digital glitch filter
disabled, analog filter enabled) — Asynchronous path
100 — ns 3
GPIO pin interrupt pulse width (digital glitch filter
disabled, analog filter disabled) — Asynchronous path
50 — ns 3
External reset pulse width (digital glitch filter disabled) 100 — ns 3
Mode select (EZP_CS) hold time after reset
deassertion
2 — Bus clock
cycles
Port rise and fall time (high drive strength)
• Slew disabled
• 1.71 ≤ VDD ≤ 2.7V
• 2.7 ≤ VDD ≤ 3.6V
• Slew enabled
• 1.71 ≤ VDD ≤ 2.7V
• 2.7 ≤ VDD ≤ 3.6V
—
—
—
—
13
7
36
24
ns
ns
ns
ns
4
Table continues on the next page...
General
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
20 Freescale Semiconductor, Inc.
Table 10. General switching specifications (continued)
Symbol Description Min. Max. Unit Notes
Port rise and fall time (low drive strength)
• Slew disabled
• 1.71 ≤ VDD ≤ 2.7V
• 2.7 ≤ VDD ≤ 3.6V
• Slew enabled
• 1.71 ≤ VDD ≤ 2.7V
• 2.7 ≤ VDD ≤ 3.6V
—
—
—
—
12
6
36
24
ns
ns
ns
ns
5
1. This is the minimum pulse width that is guaranteed to pass through the pin synchronization circuitry. Shorter pulses may or
may not be recognized. In Stop, VLPS, LLS, and VLLSx modes, the synchronizer is bypassed so shorter pulses can be
recognized in that case.
2. The greater synchronous and asynchronous timing must be met.
3. This is the minimum pulse width that is guaranteed to be recognized as a pin interrupt request in Stop, VLPS, LLS, and
VLLSx modes.
4. 75pF load
5. 15pF load
5.4 Thermal specifications
5.4.1 Thermal operating requirements
Table 11. Thermal operating requirements
Symbol Description Min. Max. Unit
TJDie junction temperature –40 125 °C
TAAmbient temperature –40 105 °C
5.4.2 Thermal attributes
Board type Symbol Description 32 QFN Unit Notes
Single-layer (1s) RθJA Thermal
resistance, junction
to ambient (natural
convection)
94 °C/W 1, 2
Four-layer (2s2p) RθJA Thermal
resistance, junction
to ambient (natural
convection)
32 °C/W 1, 3
Table continues on the next page...
General
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 21
Board type Symbol Description 32 QFN Unit Notes
Single-layer (1s) RθJMA Thermal
resistance, junction
to ambient (200 ft./
min. air speed)
78 °C/W 1,3
Four-layer (2s2p) RθJMA Thermal
resistance, junction
to ambient (200 ft./
min. air speed)
27 °C/W ,
— RθJB Thermal
resistance, junction
to board
12 °C/W 5
— RθJC Thermal
resistance, junction
to case
1.5 °C/W 6
—ΨJT Thermal
characterization
parameter, junction
to package top
outside center
(natural
convection)
6 °C/W 7
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site
(board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board
thermal resistance.
2. Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal Test Method Environmental
Conditions—Natural Convection (Still Air) with the single layer board horizontal. For the LQFP, the board meets the
JESD51-3 specification. For the MAPBGA, the board meets the JESD51-9 specification.
3. Determined according to JEDEC Standard JESD51-6, Integrated Circuits Thermal Test Method Environmental
Conditions—Forced Convection (Moving Air) with the board horizontal.
5. Determined according to JEDEC Standard JESD51-8, Integrated Circuit Thermal Test Method Environmental
Conditions—Junction-to-Board. Board temperature is measured on the top surface of the board near the package.
6. Determined according to Method 1012.1 of MIL-STD 883, Test Method Standard, Microcircuits, with the cold plate
temperature used for the case temperature. The value includes the thermal resistance of the interface material
between the top of the package and the cold plate.
7. Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal Test Method Environmental
Conditions—Natural Convection (Still Air).
6 Peripheral operating requirements and behaviors
6.1 Core modules
6.1.1 JTAG electricals
Table 12. JTAG voltage range electricals
Symbol Description Min. Max. Unit
Operating voltage 2.7 5.5 V
Table continues on the next page...
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
22 Freescale Semiconductor, Inc.
Table 12. JTAG voltage range electricals (continued)
Symbol Description Min. Max. Unit
J1 TCLK frequency of operation
• JTAG
• CJTAG
—
—
10
5
MHz
J2 TCLK cycle period 1/J1 — ns
J3 TCLK clock pulse width
• JTAG
• CJTAG
100
200
—
—
ns
ns
ns
J4 TCLK rise and fall times — 1 ns
J5 TMS input data setup time to TCLK rise
• JTAG
• CJTAG
53
112
—
—
ns
J6 TDI input data setup time to TCLK rise 8 — ns
J7 TMS input data hold time after TCLK rise
• JTAG
• CJTAG
3.4
3.4
—
—
ns
J8 TDI input data hold time after TCLK rise 3.4 — ns
J9 TCLK low to TMS data valid
• JTAG
• CJTAG
—
—
48
85
ns
J10 TCLK low to TDO data valid — 48 ns
J11 Output data hold/invalid time after clock edge1— 3 ns
1. They are common for JTAG and CJTAG. Input transition = 1 ns and Output load = 50pf
J2
J3 J3
J4 J4
TCLK (input)
Figure 4. Test clock input timing
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 23
J7
J8
J7
J5 J6
Input data valid
Output data valid
Output data valid
TCLK
Data inputs
Data outputs
Data outputs
Data outputs
Figure 5. Boundary scan (JTAG) timing
J11
J12
J11
J9 J10
Input data valid
Output data valid
Output data valid
TCLK
TDI/TMS
TDO
TDO
TDO
Figure 6. Test Access Port timing
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
24 Freescale Semiconductor, Inc.
J14
J13
TCLK
TRST
Figure 7. TRST timing
6.2 System modules
There are no specifications necessary for the device's system modules.
6.3 Clock modules
6.3.1 MCG specifications
Table 13. MCG specifications
Symbol Description Min. Typ. Max. Unit Notes
fints_ft Internal reference frequency (slow clock) —
factory trimmed at nominal VDD and 25 °C
— 32.768 — kHz
fints_t Internal reference frequency (slow clock) — user
trimmed
31.25 — 39.0625 kHz
Δfdco_res_t Resolution of trimmed average DCO output
frequency at fixed voltage and temperature —
using SCTRIM and SCFTRIM
— ± 0.3 ± 0.6 %fdco 1
Δfdco_t Total deviation of trimmed average DCO output
frequency over voltage and temperature
— +0.5/-0.7 ± 3 %fdco 1
Δfdco_t Total deviation of trimmed average DCO output
frequency over fixed voltage and temperature
range of 0–70°C
— ± 0.3 — %fdco 1
fintf_ft Internal reference frequency (fast clock) —
factory trimmed at nominal VDD and 25°C
— 4 — MHz
fintf_t Internal reference frequency (fast clock) — user
trimmed at nominal VDD and 25 °C
3 — 5 MHz
floc_low Loss of external clock minimum frequency —
RANGE = 00
(3/5) x
fints_t
— — kHz
floc_high Loss of external clock minimum frequency —
RANGE = 01, 10, or 11
(16/5) x
fints_t
— — kHz
FLL
Table continues on the next page...
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 25
Table 13. MCG specifications (continued)
Symbol Description Min. Typ. Max. Unit Notes
ffll_ref FLL reference frequency range 31.25 — 39.0625 kHz
fdco DCO output
frequency range
Low range (DRS=00)
640 × ffll_ref
20 20.97 25 MHz 2, 3
Mid range (DRS=01)
1280 × ffll_ref
40 41.94 50 MHz
Mid-high range (DRS=10)
1920 × ffll_ref
60 62.91 75 MHz
High range (DRS=11)
2560 × ffll_ref
80 83.89 100 MHz
fdco_t_DMX3
2
DCO output
frequency
Low range (DRS=00)
732 × ffll_ref
— 23.99 — MHz 4, 5
Mid range (DRS=01)
1464 × ffll_ref
— 47.97 — MHz
Mid-high range (DRS=10)
2197 × ffll_ref
— 71.99 — MHz
High range (DRS=11)
2929 × ffll_ref
— 95.98 — MHz
Jcyc_fll FLL period jitter
• fVCO = 48 MHz
• fVCO = 98 MHz
—
—
180
150
—
—
ps
tfll_acquire FLL target frequency acquisition time — — 1 ms 6
PLL
fvco VCO operating frequency 48.0 — 100 MHz
Ipll PLL operating current
• PLL @ 96 MHz (fosc_hi_1 = 8 MHz, fpll_ref =
2 MHz, VDIV multiplier = 48)
— 1060 — µA 7
Ipll PLL operating current
• PLL @ 48 MHz (fosc_hi_1 = 8 MHz, fpll_ref =
2 MHz, VDIV multiplier = 24)
— 600 — µA 7
fpll_ref PLL reference frequency range 2.0 — 4.0 MHz
Jcyc_pll PLL period jitter (RMS)
• fvco = 48 MHz
• fvco = 100 MHz
—
—
120
50
—
—
ps
ps
8
Table continues on the next page...
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
26 Freescale Semiconductor, Inc.
Table 13. MCG specifications (continued)
Symbol Description Min. Typ. Max. Unit Notes
Jacc_pll PLL accumulated jitter over 1µs (RMS)
• fvco = 48 MHz
• fvco = 100 MHz
—
—
1350
600
—
—
ps
ps
8
Dlock Lock entry frequency tolerance ± 1.49 — ± 2.98 %
Dunl Lock exit frequency tolerance ± 4.47 — ± 5.97 %
tpll_lock Lock detector detection time — — 150 × 10-6
+ 1075(1/
fpll_ref)
s9
1. This parameter is measured with the internal reference (slow clock) being used as a reference to the FLL (FEI clock
mode).
2. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32=0.
3. The resulting system clock frequencies should not exceed their maximum specified values. The DCO frequency deviation
(Δfdco_t) over voltage and temperature should be considered.
4. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32=1.
5. The resulting clock frequency must not exceed the maximum specified clock frequency of the device.
6. This specification applies to any time the FLL reference source or reference divider is changed, trim value is changed,
DMX32 bit is changed, DRS bits are changed, or changing from FLL disabled (BLPE, BLPI) to FLL enabled (FEI, FEE,
FBE, FBI). If a crystal/resonator is being used as the reference, this specification assumes it is already running.
7. Excludes any oscillator currents that are also consuming power while PLL is in operation.
8. This specification was obtained using a Freescale developed PCB. PLL jitter is dependent on the noise characteristics of
each PCB and results will vary.
9. This specification applies to any time the PLL VCO divider or reference divider is changed, or changing from PLL disabled
(BLPE, BLPI) to PLL enabled (PBE, PEE). If a crystal/resonator is being used as the reference, this specification assumes
it is already running.
6.3.2 Oscillator electrical specifications
This section provides the electrical characteristics of the module.
6.3.2.1 Oscillator DC electrical specifications
Table 14. Oscillator DC electrical specifications
Symbol Description Min. Typ. Max. Unit Notes
VDD Supply voltage 1.71 — 3.6 V
IDDOSC Supply current — low-power mode (HGO=0)
• 32 kHz
• 4 MHz
• 8 MHz (RANGE=01)
• 16 MHz
• 24 MHz
• 32 MHz
—
—
—
—
—
—
500
200
300
950
1.2
1.5
—
—
—
—
—
—
nA
μA
μA
μA
mA
mA
1
Table continues on the next page...
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 27
Table 14. Oscillator DC electrical specifications (continued)
Symbol Description Min. Typ. Max. Unit Notes
IDDOSC Supply current — high gain mode (HGO=1)
• 32 kHz
• 4 MHz
• 8 MHz (RANGE=01)
• 16 MHz
• 24 MHz
• 32 MHz
—
—
—
—
—
—
25
400
500
2.5
3
4
—
—
—
—
—
—
μA
μA
μA
mA
mA
mA
1
CxEXTAL load capacitance — — — 2, 3
CyXTAL load capacitance — — — 2, 3
RFFeedback resistor — low-frequency, low-power
mode (HGO=0)
— — — MΩ 2, 4
Feedback resistor — low-frequency, high-gain
mode (HGO=1)
— 10 — MΩ
Feedback resistor — high-frequency, low-power
mode (HGO=0)
— — — MΩ
Feedback resistor — high-frequency, high-gain
mode (HGO=1)
— 1 — MΩ
RSSeries resistor — low-frequency, low-power
mode (HGO=0)
— — — kΩ
Series resistor — low-frequency, high-gain mode
(HGO=1)
— 200 — kΩ
Series resistor — high-frequency, low-power
mode (HGO=0)
— — — kΩ
Series resistor — high-frequency, high-gain
mode (HGO=1)
—
0
—
kΩ
Vpp5Peak-to-peak amplitude of oscillation (oscillator
mode) — low-frequency, low-power mode
(HGO=0)
— 0.6 — V
Peak-to-peak amplitude of oscillation (oscillator
mode) — low-frequency, high-gain mode
(HGO=1)
— VDD — V
Peak-to-peak amplitude of oscillation (oscillator
mode) — high-frequency, low-power mode
(HGO=0)
— 0.6 — V
Peak-to-peak amplitude of oscillation (oscillator
mode) — high-frequency, high-gain mode
(HGO=1)
— VDD — V
1. VDD=3.3 V, Temperature =25 °C
2. See crystal or resonator manufacturer's recommendation
3. Cx,Cy can be provided by using either the integrated capacitors or by using external components.
4. When low power mode is selected, RF is integrated and must not be attached externally.
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
28 Freescale Semiconductor, Inc.
5. The EXTAL and XTAL pins should only be connected to required oscillator components and must not be connected to any
other devices.
6.3.2.2 Oscillator frequency specifications
Table 15. Oscillator frequency specifications
Symbol Description Min. Typ. Max. Unit Notes
fosc_lo Oscillator crystal or resonator frequency — low
frequency mode (MCG_C2[RANGE]=00)
32 — 40 kHz
fosc_hi_1 Oscillator crystal or resonator frequency — high
frequency mode (low range)
(MCG_C2[RANGE]=01)
3 — 8 MHz
fosc_hi_2 Oscillator crystal or resonator frequency — high
frequency mode (high range)
(MCG_C2[RANGE]=1x)
8 — 32 MHz
fec_extal Input clock frequency (external clock mode) — — 50 MHz 1, 2
tdc_extal Input clock duty cycle (external clock mode) 40 50 60 %
tcst Crystal startup time — 32 kHz low-frequency,
low-power mode (HGO=0)
— 750 — ms 3, 4
Crystal startup time — 32 kHz low-frequency,
high-gain mode (HGO=1)
— 250 — ms
Crystal startup time — 8 MHz high-frequency
(MCG_C2[RANGE]=01), low-power mode
(HGO=0)
— 0.6 — ms
Crystal startup time — 8 MHz high-frequency
(MCG_C2[RANGE]=01), high-gain mode
(HGO=1)
— 1 — ms
1. Other frequency limits may apply when external clock is being used as a reference for the FLL or PLL.
2. When transitioning from FBE to FEI mode, restrict the frequency of the input clock so that, when it is divided by FRDIV, it
remains within the limits of the DCO input clock frequency.
3. Proper PC board layout procedures must be followed to achieve specifications.
4. Crystal startup time is defined as the time between the oscillator being enabled and the OSCINIT bit in the MCG_S register
being set.
6.3.3 32 kHz Oscillator Electrical Characteristics
This section describes the module electrical characteristics.
6.3.3.1 32 kHz oscillator DC electrical specifications
Table 16. 32kHz oscillator DC electrical specifications
Symbol Description Min. Typ. Max. Unit
VBAT Supply voltage 1.71 — 3.6 V
RFInternal feedback resistor — 100 — MΩ
Table continues on the next page...
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 29
Table 16. 32kHz oscillator DC electrical specifications (continued)
Symbol Description Min. Typ. Max. Unit
Cpara Parasitical capacitance of EXTAL32 and XTAL32 — 5 7 pF
Vpp1Peak-to-peak amplitude of oscillation — 0.6 — V
1. When a crystal is being used with the 32 kHz oscillator, the EXTAL32 and XTAL32 pins should only be connected to
required oscillator components and must not be connected to any other devices.
6.3.3.2 32kHz oscillator frequency specifications
Table 17. 32kHz oscillator frequency specifications
Symbol Description Min. Typ. Max. Unit Notes
fosc_lo Oscillator crystal — 32.768 — kHz
tstart Crystal start-up time — 1000 — ms 1
fec_extal32 Externally provided input clock frequency — 32.768 — kHz 2
vec_extal32 Externally provided input clock amplitude 700 — VBAT mV 2, 3
1. Proper PC board layout procedures must be followed to achieve specifications.
2. This specification is for an externally supplied clock driven to EXTAL32 and does not apply to any other clock input. The
oscillator remains enabled and XTAL32 must be left unconnected.
3. The parameter specified is a peak-to-peak value and VIH and VIL specifications do not apply. The voltage of the applied
clock must be within the range of VSS to VBAT.
6.4 Memories and memory interfaces
6.4.1 Flash electrical specifications
This section describes the electrical characteristics of the flash memory module.
6.4.1.1 Flash timing specifications — program and erase
The following specifications represent the amount of time the internal charge pumps are
active and do not include command overhead.
Table 18. NVM program/erase timing specifications
Symbol Description Min. Typ. Max. Unit Notes
thvpgm4 Longword Program high-voltage time — 7.5 18 μs
thversscr Sector Erase high-voltage time — 13 113 ms 1
thversblk32k Erase Block high-voltage time for 32 KB — 52 452 ms 1
thversblk128k Erase Block high-voltage time for 128 KB — 52 452 ms 1
1. Maximum time based on expectations at cycling end-of-life.
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
30 Freescale Semiconductor, Inc.
6.4.1.2 Flash timing specifications — commands
Table 19. Flash command timing specifications
Symbol Description Min. Typ. Max. Unit Notes
trd1blk32k
trd1blk128k
Read 1s Block execution time
• 32 KB data flash
• 128 KB program flash
—
—
—
—
0.5
1.7
ms
ms
trd1sec1k Read 1s Section execution time (flash sector) — — 60 μs 1
tpgmchk Program Check execution time — — 45 μs 1
trdrsrc Read Resource execution time — — 30 μs 1
tpgm4 Program Longword execution time — 65 145 μs
tersblk32k
tersblk128k
Erase Flash Block execution time
• 32 KB data flash
• 128 KB program flash
—
—
55
61
465
495
ms
ms
2
tersscr Erase Flash Sector execution time — 14 114 ms 2
tpgmsec512
tpgmsec1k
Program Section execution time
• 512 B flash
• 1 KB flash
—
—
4.7
9.3
—
—
ms
ms
trd1all Read 1s All Blocks execution time — — 1.8 ms
trdonce Read Once execution time — — 25 μs 1
tpgmonce Program Once execution time — 65 — μs
tersall Erase All Blocks execution time — 115 1000 ms 2
tvfykey Verify Backdoor Access Key execution time — — 30 μs 1
tpgmpart32k
Program Partition for EEPROM execution time
• 32 KB FlexNVM
—
70
—
ms
tsetramff
tsetram8k
tsetram32k
Set FlexRAM Function execution time:
• Control Code 0xFF
• 8 KB EEPROM backup
• 32 KB EEPROM backup
—
—
—
50
0.3
0.7
—
0.5
1.0
μs
ms
ms
Byte-write to FlexRAM for EEPROM operation
teewr8bers Byte-write to erased FlexRAM location execution
time
— 175 260 μs 3
teewr8b8k
teewr8b16k
teewr8b32k
Byte-write to FlexRAM execution time:
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
—
—
340
385
475
1700
1800
2000
μs
μs
μs
Table continues on the next page...
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 31
Table 19. Flash command timing specifications (continued)
Symbol Description Min. Typ. Max. Unit Notes
Word-write to FlexRAM for EEPROM operation
teewr16bers Word-write to erased FlexRAM location
execution time
— 175 260 μs
teewr16b8k
teewr16b16k
teewr16b32k
Word-write to FlexRAM execution time:
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
—
—
340
385
475
1700
1800
2000
μs
μs
μs
Longword-write to FlexRAM for EEPROM operation
teewr32bers Longword-write to erased FlexRAM location
execution time
— 360 540 μs
teewr32b8k
teewr32b16k
teewr32b32k
Longword-write to FlexRAM execution time:
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
—
—
545
630
810
1950
2050
2250
μs
μs
μs
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash high voltage current behaviors
Table 20. Flash high voltage current behaviors
Symbol Description Min. Typ. Max. Unit
IDD_PGM Average current adder during high voltage
flash programming operation
— 2.5 6.0 mA
IDD_ERS Average current adder during high voltage
flash erase operation
— 1.5 4.0 mA
6.4.1.4 Reliability specifications
Table 21. NVM reliability specifications
Symbol Description Min. Typ.1Max. Unit Notes
Program Flash
tnvmretp10k Data retention after up to 10 K cycles 5 50 — years
tnvmretp1k Data retention after up to 1 K cycles 20 100 — years
nnvmcycp Cycling endurance 10 K 50 K — cycles 2
Data Flash
tnvmretd10k Data retention after up to 10 K cycles 5 50 — years
Table continues on the next page...
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
32 Freescale Semiconductor, Inc.
Table 21. NVM reliability specifications (continued)
Symbol Description Min. Typ.1Max. Unit Notes
tnvmretd1k Data retention after up to 1 K cycles 20 100 — years
nnvmcycd Cycling endurance 10 K 50 K — cycles 2
FlexRAM as EEPROM
tnvmretee100 Data retention up to 100% of write endurance 5 50 — years
tnvmretee10 Data retention up to 10% of write endurance 20 100 — years
nnvmwree16
nnvmwree128
nnvmwree512
nnvmwree4k
nnvmwree8k
Write endurance
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio = 8192
35 K
315 K
1.27 M
10 M
20 M
175 K
1.6 M
6.4 M
50 M
100 M
—
—
—
—
—
writes
writes
writes
writes
writes
3
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
25°C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering
Bulletin EB619.
2. Cycling endurance represents number of program/erase cycles at -40°C ≤ Tj ≤ 125°C.
3. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup. Minimum and typical values
assume all byte-writes to FlexRAM.
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the flash
memory module to obtain an effective endurance increase for the EEPROM data. The
built-in EEPROM record management system raises the number of program/erase cycles
that can be attained prior to device wear-out by cycling the EEPROM data through a
larger EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_FlexRAM = × Write_efficiency × n
EEPROM – 2 × EEESIZE
EEESIZE nvmcycd
where
• Writes_FlexRAM — minimum number of writes to each FlexRAM location
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 33
• EEPROM — allocated FlexNVM based on DEPART; entered with the Program
Partition command
• EEESIZE — allocated FlexRAM based on DEPART; entered with the Program
Partition command
• Write_efficiency —
• 0.25 for 8-bit writes to FlexRAM
• 0.50 for 16-bit or 32-bit writes to FlexRAM
• nnvmcycd — data flash cycling endurance (the following graph assumes 10,000
cycles)
Figure 8. EEPROM backup writes to FlexRAM
6.4.2 EzPort Switching Specifications
Table 22. EzPort switching specifications
Num Description Min. Max. Unit
Operating voltage 1.71 3.6 V
Table continues on the next page...
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
34 Freescale Semiconductor, Inc.
Table 22. EzPort switching specifications (continued)
Num Description Min. Max. Unit
EP1 EZP_CK frequency of operation (all commands except
READ)
— fSYS/2 MHz
EP1a EZP_CK frequency of operation (READ command) — fSYS/8 MHz
EP2 EZP_CS negation to next EZP_CS assertion 2 x tEZP_CK — ns
EP3 EZP_CS input valid to EZP_CK high (setup) 5 — ns
EP4 EZP_CK high to EZP_CS input invalid (hold) 5 — ns
EP5 EZP_D input valid to EZP_CK high (setup) 2 — ns
EP6 EZP_CK high to EZP_D input invalid (hold) 5 — ns
EP7 EZP_CK low to EZP_Q output valid — 17 ns
EP8 EZP_CK low to EZP_Q output invalid (hold) 0 — ns
EP9 EZP_CS negation to EZP_Q tri-state — 12 ns
EP2
EP3 EP4
EP5 EP6
EP7 EP8
EP9
EZP_CK
EZP_CS
EZP_Q (output)
EZP_D (input)
Figure 9. EzPort Timing Diagram
6.5 Security and integrity modules
There are no specifications necessary for the device's security and integrity modules.
6.6 Analog
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 35
6.6.1 ADC electrical specifications
The 16-bit accuracy specifications listed in Table 23 and Table 24 are achievable on the
differential pins ADCx_DP0, ADCx_DM0.
All other ADC channels meet the 13-bit differential/12-bit single-ended accuracy
specifications.
6.6.1.1 16-bit ADC operating conditions
Table 23. 16-bit ADC operating conditions
Symbol Description Conditions Min. Typ.1Max. Unit Notes
VDDA Supply voltage Absolute 1.71 — 3.6 V
ΔVDDA Supply voltage Delta to VDD (VDD-
VDDA)
-100 0 +100 mV 2
ΔVSSA Ground voltage Delta to VSS (VSS-
VSSA)
-100 0 +100 mV 2
VREFH ADC reference
voltage high
1.13 VDDA VDDA V
VREFL Reference
voltage low
VSSA VSSA VSSA V
VADIN Input voltage VREFL — VREFH V
CADIN Input
capacitance
• 16 bit modes
• 8/10/12 bit
modes
—
—
8
4
10
5
pF
RADIN Input resistance — 2 5 kΩ
RAS Analog source
resistance
12 bit modes
fADCK < 4MHz
—
—
5
kΩ
3
fADCK ADC conversion
clock frequency
≤ bit modes
1.0
—
18.0
MHz
4
fADCK ADC conversion
clock frequency
16 bit modes
2.0
—
12.0
MHz
4
Crate ADC conversion
rate
≤ bit modes
No ADC hardware
averaging
Continuous
conversions enabled,
subsequent conversion
time
20.000
—
818.330
Ksps
5
Table continues on the next page...
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
36 Freescale Semiconductor, Inc.
Table 23. 16-bit ADC operating conditions (continued)
Symbol Description Conditions Min. Typ.1Max. Unit Notes
Crate ADC conversion
rate
16 bit modes
No ADC hardware
averaging
Continuous
conversions enabled,
subsequent conversion
time
37.037
—
461.467
Ksps
5
1. Typical values assume VDDA = 3.0 V, Temp = 25°C, fADCK = 1.0 MHz unless otherwise stated. Typical values are for
reference only and are not tested in production.
2. DC potential difference.
3. This resistance is external to MCU. The analog source resistance should be kept as low as possible in order to achieve the
best results. The results in this datasheet were derived from a system which has <8 Ω analog source resistance. The RAS/
CAS time constant should be kept to <1ns.
4. To use the maximum ADC conversion clock frequency, the ADHSC bit should be set and the ADLPC bit should be clear.
5. For guidelines and examples of conversion rate calculation, download the ADC calculator tool: http://cache.freescale.com/
files/soft_dev_tools/software/app_software/converters/ADC_CALCULATOR_CNV.zip?fpsp=1
RAS
VAS
CAS
ZAS
VADIN
ZADIN
RADIN
RADIN
RADIN
RADIN
CADIN
Pad
leakage
due to
input
protection
INPUT PININPUT PIN
INPUT PIN
INPUT PIN
SIMPLIFIED
INPUT PIN EQUIVALENT
CIRCUIT
SIMPLIFIED
CHANNEL SELECT
CIRCUIT
ADC SAR
ENGINE
Figure 10. ADC input impedance equivalency diagram
6.6.1.2 16-bit ADC electrical characteristics
Table 24. 16-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA)
Symbol Description Conditions1Min. Typ.2Max. Unit Notes
IDDA_ADC Supply current 0.215 — 1.7 mA 3
Table continues on the next page...
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 37
Table 24. 16-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA) (continued)
Symbol Description Conditions1Min. Typ.2Max. Unit Notes
fADACK
ADC
asynchronous
clock source
• ADLPC=1, ADHSC=0
• ADLPC=1, ADHSC=1
• ADLPC=0, ADHSC=0
• ADLPC=0, ADHSC=1
1.2
3.0
2.4
4.4
2.4
4.0
5.2
6.2
3.9
7.3
6.1
9.5
MHz
MHz
MHz
MHz
tADACK = 1/
fADACK
Sample Time See Reference Manual chapter for sample times
TUE Total unadjusted
error
• 12 bit modes
• <12 bit modes
—
—
±4
±1.4
±6.8
±2.1
LSB45
DNL Differential non-
linearity
• 12 bit modes
• <12 bit modes
—
—
±0.7
±0.2
-1.1 to
+1.9
-0.3 to 0.5
LSB45
INL Integral non-
linearity
• 12 bit modes
• <12 bit modes
—
—
±1.0
±0.5
-2.7 to
+1.9
-0.7 to
+0.5
LSB45
EFS Full-scale error • 12 bit modes
• <12 bit modes
—
—
-4
-1.4
-5.4
-1.8
LSB4VADIN =
VDDA
5
EQQuantization
error
• 16 bit modes
• bit modes
—
—
-1 to 0
—
—
±0.5
LSB4
ENOB Effective number
of bits
16 bit differential mode
• Avg=32
• Avg=4
16 bit single-ended mode
• Avg=32
• Avg=4
12.8
11.9
12.2
11.4
14.5
13.8
13.9
13.1
—
—
—
—
bits
bits
bits
bits
6
SINAD Signal-to-noise
plus distortion
See ENOB 6.02 × ENOB + 1.76 dB
THD Total harmonic
distortion
16 bit differential mode
• Avg=32
16 bit single-ended mode
• Avg=32
—
—
–94
-85
—
—
dB
dB
7
Table continues on the next page...
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
38 Freescale Semiconductor, Inc.
Table 24. 16-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA) (continued)
Symbol Description Conditions1Min. Typ.2Max. Unit Notes
SFDR Spurious free
dynamic range
16 bit differential mode
• Avg=32
16 bit single-ended mode
• Avg=32
82
78
95
90
—
—
dB
dB
7
EIL Input leakage
error
IIn × RAS mV IIn =
leakage
current
(refer to
the MCU's
voltage
and
current
operating
ratings)
Temp sensor
slope
–40°C to 105°C — 1.715 — mV/°C
VTEMP25 Temp sensor
voltage
25°C — 719 — mV
1. All accuracy numbers assume the ADC is calibrated with VREFH = VDDA
2. Typical values assume VDDA = 3.0 V, Temp = 25°C, fADCK = 2.0 MHz unless otherwise stated. Typical values are for
reference only and are not tested in production.
3. The ADC supply current depends on the ADC conversion clock speed, conversion rate and the ADLPC bit (low power).
For lowest power operation the ADLPC bit should be set, the HSC bit should be clear with 1MHz ADC conversion clock
speed.
4. 1 LSB = (VREFH - VREFL)/2N
5. ADC conversion clock <16MHz, Max hardware averaging (AVGE = %1, AVGS = %11)
6. Input data is 100 Hz sine wave. ADC conversion clock <12MHz.
7. Input data is 1 kHz sine wave. ADC conversion clock <12MHz.
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 39
Figure 11. Typical ENOB vs. ADC_CLK for 16-bit differential mode
Figure 12. Typical ENOB vs. ADC_CLK for 16-bit single-ended mode
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
40 Freescale Semiconductor, Inc.
6.6.2 CMP and 6-bit DAC electrical specifications
Table 25. Comparator and 6-bit DAC electrical specifications
Symbol Description Min. Typ. Max. Unit
VDD Supply voltage 1.71 — 3.6 V
IDDHS Supply current, High-speed mode (EN=1, PMODE=1) — — 200 μA
IDDLS Supply current, low-speed mode (EN=1, PMODE=0) — — 20 μA
VAIN Analog input voltage VSS – 0.3 — VDD V
VAIO Analog input offset voltage — — 20 mV
VHAnalog comparator hysteresis1
• CR0[HYSTCTR] = 00
• CR0[HYSTCTR] = 01
• CR0[HYSTCTR] = 10
• CR0[HYSTCTR] = 11
—
—
—
—
5
10
20
30
—
—
—
—
mV
mV
mV
mV
VCMPOh Output high VDD – 0.5 — — V
VCMPOl Output low — — 0.5 V
tDHS Propagation delay, high-speed mode (EN=1,
PMODE=1)
20 50 200 ns
tDLS Propagation delay, low-speed mode (EN=1,
PMODE=0)
80 250 600 ns
Analog comparator initialization delay2— — 40 μs
IDAC6b 6-bit DAC current adder (enabled) — 7 — μA
INL 6-bit DAC integral non-linearity –0.5 — 0.5 LSB3
DNL 6-bit DAC differential non-linearity –0.3 — 0.3 LSB
1. Typical hysteresis is measured with input voltage range limited to 0.6 to VDD-0.6V.
2. Comparator initialization delay is defined as the time between software writes to change control inputs (Writes to DACEN,
VRSEL, PSEL, MSEL, VOSEL) and the comparator output settling to a stable level.
3. 1 LSB = Vreference/64
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 41
0.04
0.05
0.06
0.07
0.08
P Hystereris (V)
00
01
10
HYSTCTR
Setting
0
0.01
0.02
0.03
0.1 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1
CM
10
11
Vin level (V)
Figure 13. Typical hysteresis vs. Vin level (VDD=3.3V, PMODE=0)
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
42 Freescale Semiconductor, Inc.
0 08
0.1
0.12
0.14
0.16
0.18
P Hystereris (V)
00
01
10
HYSTCTR
Setting
0
0.02
0.04
0.06
0.08
0.1 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1
CMP
10
11
Vin level (V)
Figure 14. Typical hysteresis vs. Vin level (VDD=3.3V, PMODE=1)
6.7 Timers
See General switching specifications.
6.8 Communication interfaces
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 43
6.8.1 DSPI switching specifications (limited voltage range)
The DMA Serial Peripheral Interface (DSPI) provides a synchronous serial bus with
master and slave operations. Many of the transfer attributes are programmable. The tables
below provide DSPI timing characteristics for classic SPI timing modes. Refer to the
DSPI chapter of the Reference Manual for information on the modified transfer formats
used for communicating with slower peripheral devices.
Table 26. Master mode DSPI timing (limited voltage range)
Num Description Min. Max. Unit Notes
Operating voltage 2.7 3.6 V
Frequency of operation — 25 MHz
DS1 DSPI_SCK output cycle time 2 x tBUS — ns
DS2 DSPI_SCK output high/low time (tSCK/2) − 2 (tSCK/2) + 2 ns
DS3 DSPI_PCSn valid to DSPI_SCK delay (tBUS x 2) −
2
— ns 1
DS4 DSPI_SCK to DSPI_PCSn invalid delay (tBUS x 2) −
2
— ns 2
DS5 DSPI_SCK to DSPI_SOUT valid — 8 ns
DS6 DSPI_SCK to DSPI_SOUT invalid 0 — ns
DS7 DSPI_SIN to DSPI_SCK input setup 14 — ns
DS8 DSPI_SCK to DSPI_SIN input hold 0 — ns
1. The delay is programmable in SPIx_CTARn[PSSCK] and SPIx_CTARn[CSSCK].
2. The delay is programmable in SPIx_CTARn[PASC] and SPIx_CTARn[ASC].
DS3 DS4
DS1
DS2
DS7 DS8
First data Last data
DS5
First data Data Last data
DS6
Data
DSPI_PCSn
DSPI_SCK
(CPOL=0)
DSPI_SIN
DSPI_SOUT
Figure 15. DSPI classic SPI timing — master mode
Table 27. Slave mode DSPI timing (limited voltage range)
Num Description Min. Max. Unit
Operating voltage 2.7 3.6 V
Frequency of operation 12.5 MHz
Table continues on the next page...
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
44 Freescale Semiconductor, Inc.
Table 27. Slave mode DSPI timing (limited voltage range) (continued)
Num Description Min. Max. Unit
DS9 DSPI_SCK input cycle time 4 x tBUS — ns
DS10 DSPI_SCK input high/low time (tSCK/2) − 2 (tSCK/2) + 2 ns
DS11 DSPI_SCK to DSPI_SOUT valid — 20 ns
DS12 DSPI_SCK to DSPI_SOUT invalid 0 — ns
DS13 DSPI_SIN to DSPI_SCK input setup 2 — ns
DS14 DSPI_SCK to DSPI_SIN input hold 7 — ns
DS15 DSPI_SS active to DSPI_SOUT driven — 14 ns
DS16 DSPI_SS inactive to DSPI_SOUT not driven — 14 ns
First data Last data
First data Data Last data
Data
DS15
DS10 DS9
DS16
DS11
DS12
DS14
DS13
DSPI_SS
DSPI_SCK
(CPOL=0)
DSPI_SOUT
DSPI_SIN
Figure 16. DSPI classic SPI timing — slave mode
6.8.2 DSPI switching specifications (full voltage range)
The DMA Serial Peripheral Interface (DSPI) provides a synchronous serial bus with
master and slave operations. Many of the transfer attributes are programmable. The tables
below provides DSPI timing characteristics for classic SPI timing modes. Refer to the
DSPI chapter of the Reference Manual for information on the modified transfer formats
used for communicating with slower peripheral devices.
Table 28. Master mode DSPI timing (full voltage range)
Num Description Min. Max. Unit Notes
Operating voltage 1.71 3.6 V 1
Frequency of operation — 12.5 MHz
DS1 DSPI_SCK output cycle time 4 x tBUS — ns
DS2 DSPI_SCK output high/low time (tSCK/2) - 4 (tSCK/2) + 4 ns
Table continues on the next page...
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 45
Table 28. Master mode DSPI timing (full voltage range) (continued)
Num Description Min. Max. Unit Notes
DS3 DSPI_PCSn valid to DSPI_SCK delay (tBUS x 2) −
4
— ns 2
DS4 DSPI_SCK to DSPI_PCSn invalid delay (tBUS x 2) −
4
— ns 3
DS5 DSPI_SCK to DSPI_SOUT valid — 8.5 ns
DS6 DSPI_SCK to DSPI_SOUT invalid -1.2 — ns
DS7 DSPI_SIN to DSPI_SCK input setup 19.1 — ns
DS8 DSPI_SCK to DSPI_SIN input hold 0 — ns
1. The DSPI module can operate across the entire operating voltage for the processor, but to run across the full voltage
range the maximum frequency of operation is reduced.
2. The delay is programmable in SPIx_CTARn[PSSCK] and SPIx_CTARn[CSSCK].
3. The delay is programmable in SPIx_CTARn[PASC] and SPIx_CTARn[ASC].
DS3 DS4
DS1
DS2
DS7 DS8
First data Last data
DS5
First data Data Last data
DS6
Data
DSPI_PCSn
DSPI_SCK
(CPOL=0)
DSPI_SIN
DSPI_SOUT
Figure 17. DSPI classic SPI timing — master mode
Table 29. Slave mode DSPI timing (full voltage range)
Num Description Min. Max. Unit
Operating voltage 1.71 3.6 V
Frequency of operation — 6.25 MHz
DS9 DSPI_SCK input cycle time 8 x tBUS — ns
DS10 DSPI_SCK input high/low time (tSCK/2) - 4 (tSCK/2) + 4 ns
DS11 DSPI_SCK to DSPI_SOUT valid — 24 ns
DS12 DSPI_SCK to DSPI_SOUT invalid 0 — ns
DS13 DSPI_SIN to DSPI_SCK input setup 3.2 — ns
DS14 DSPI_SCK to DSPI_SIN input hold 7 — ns
DS15 DSPI_SS active to DSPI_SOUT driven — 19 ns
DS16 DSPI_SS inactive to DSPI_SOUT not driven — 19 ns
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
46 Freescale Semiconductor, Inc.
First data Last data
First data Data Last data
Data
DS15
DS10 DS9
DS16
DS11
DS12
DS14
DS13
DSPI_SS
DSPI_SCK
(CPOL=0)
DSPI_SOUT
DSPI_SIN
Figure 18. DSPI classic SPI timing — slave mode
6.8.3 I2C switching specifications
See General switching specifications.
6.8.4 UART switching specifications
See General switching specifications.
6.8.5 I2S/SAI Switching Specifications
This section provides the AC timing for the I2S/SAI module in master mode (clocks are
driven) and slave mode (clocks are input). All timing is given for noninverted serial clock
polarity (TCR2[BCP] is 0, RCR2[BCP] is 0) and a noninverted frame sync (TCR4[FSP]
is 0, RCR4[FSP] is 0). If the polarity of the clock and/or the frame sync have been
inverted, all the timing remains valid by inverting the bit clock signal (BCLK) and/or the
frame sync (FS) signal shown in the following figures.
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 47
6.8.5.1 Normal Run, Wait and Stop mode performance over the full
operating voltage range
This section provides the operating performance over the full operating voltage for the
device in Normal Run, Wait and Stop modes.
Table 30. I2S/SAI master mode timing
Num. Characteristic Min. Max. Unit
Operating voltage 1.71 3.6 V
S1 I2S_MCLK cycle time 40 — ns
S2 I2S_MCLK pulse width high/low 45% 55% MCLK period
S3 I2S_TX_BCLK/I2S_RX_BCLK cycle time (output) 80 — ns
S4 I2S_TX_BCLK/I2S_RX_BCLK pulse width high/low 45% 55% BCLK period
S5 I2S_TX_BCLK/I2S_RX_BCLK to I2S_TX_FS/
I2S_RX_FS output valid
— 15 ns
S6 I2S_TX_BCLK/I2S_RX_BCLK to I2S_TX_FS/
I2S_RX_FS output invalid
0 — ns
S7 I2S_TX_BCLK to I2S_TXD valid — 15 ns
S8 I2S_TX_BCLK to I2S_TXD invalid 0 — ns
S9 I2S_RXD/I2S_RX_FS input setup before
I2S_RX_BCLK
25 — ns
S10 I2S_RXD/I2S_RX_FS input hold after I2S_RX_BCLK 0 — ns
S1 S2 S2
S3
S4
S4
S5
S9
S7
S9 S10
S7
S8
S6
S10
S8
I2S_MCLK (output)
I2S_TX_BCLK/
I2S_RX_BCLK (output)
I2S_TX_FS/
I2S_RX_FS (output)
I2S_TX_FS/
I2S_RX_FS (input)
I2S_TXD
I2S_RXD
Figure 19. I2S/SAI timing — master modes
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
48 Freescale Semiconductor, Inc.
Table 31. I2S/SAI slave mode timing
Num. Characteristic Min. Max. Unit
Operating voltage 1.71 3.6 V
S11 I2S_TX_BCLK/I2S_RX_BCLK cycle time (input) 80 — ns
S12 I2S_TX_BCLK/I2S_RX_BCLK pulse width high/low
(input)
45% 55% MCLK period
S13 I2S_TX_FS/I2S_RX_FS input setup before
I2S_TX_BCLK/I2S_RX_BCLK
10 — ns
S14 I2S_TX_FS/I2S_RX_FS input hold after
I2S_TX_BCLK/I2S_RX_BCLK
2 — ns
S15 I2S_TX_BCLK to I2S_TXD/I2S_TX_FS output valid — 29 ns
S16 I2S_TX_BCLK to I2S_TXD/I2S_TX_FS output invalid 0 — ns
S17 I2S_RXD setup before I2S_RX_BCLK 10 — ns
S18 I2S_RXD hold after I2S_RX_BCLK 2 — ns
S19 I2S_TX_FS input assertion to I2S_TXD output valid1— 21 ns
1. Applies to first bit in each frame and only if the TCR4[FSE] bit is clear
S15
S13
S15
S17 S18
S15
S16
S16
S14
S16
S11
S12
S12
I2S_TX_BCLK/
I2S_RX_BCLK (input)
I2S_TX_FS/
I2S_RX_FS (output)
I2S_TXD
I2S_RXD
I2S_TX_FS/
I2S_RX_FS (input) S19
Figure 20. I2S/SAI timing — slave modes
6.8.5.2 VLPR, VLPW, and VLPS mode performance over the full operating
voltage range
This section provides the operating performance over the full operating voltage for the
device in VLPR, VLPW, and VLPS modes.
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 49
Table 32. I2S/SAI master mode timing in VLPR, VLPW, and VLPS modes
(full voltage range)
Num. Characteristic Min. Max. Unit
Operating voltage 1.71 3.6 V
S1 I2S_MCLK cycle time 62.5 — ns
S2 I2S_MCLK pulse width high/low 45% 55% MCLK period
S3 I2S_TX_BCLK/I2S_RX_BCLK cycle time (output) 250 — ns
S4 I2S_TX_BCLK/I2S_RX_BCLK pulse width high/low 45% 55% BCLK period
S5 I2S_TX_BCLK/I2S_RX_BCLK to I2S_TX_FS/
I2S_RX_FS output valid
— 45 ns
S6 I2S_TX_BCLK/I2S_RX_BCLK to I2S_TX_FS/
I2S_RX_FS output invalid
0 — ns
S7 I2S_TX_BCLK to I2S_TXD valid — 45 ns
S8 I2S_TX_BCLK to I2S_TXD invalid 0 — ns
S9 I2S_RXD/I2S_RX_FS input setup before
I2S_RX_BCLK
45 — ns
S10 I2S_RXD/I2S_RX_FS input hold after I2S_RX_BCLK 0 — ns
S1 S2 S2
S3
S4
S4
S5
S9
S7
S9 S10
S7
S8
S6
S10
S8
I2S_MCLK (output)
I2S_TX_BCLK/
I2S_RX_BCLK (output)
I2S_TX_FS/
I2S_RX_FS (output)
I2S_TX_FS/
I2S_RX_FS (input)
I2S_TXD
I2S_RXD
Figure 21. I2S/SAI timing — master modes
Table 33. I2S/SAI slave mode timing in VLPR, VLPW, and VLPS modes (full
voltage range)
Num. Characteristic Min. Max. Unit
Operating voltage 1.71 3.6 V
S11 I2S_TX_BCLK/I2S_RX_BCLK cycle time (input) 250 — ns
Table continues on the next page...
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
50 Freescale Semiconductor, Inc.
Table 33. I2S/SAI slave mode timing in VLPR, VLPW, and VLPS modes (full voltage range)
(continued)
Num. Characteristic Min. Max. Unit
S12 I2S_TX_BCLK/I2S_RX_BCLK pulse width high/low
(input)
45% 55% MCLK period
S13 I2S_TX_FS/I2S_RX_FS input setup before
I2S_TX_BCLK/I2S_RX_BCLK
30 — ns
S14 I2S_TX_FS/I2S_RX_FS input hold after
I2S_TX_BCLK/I2S_RX_BCLK
3 — ns
S15 I2S_TX_BCLK to I2S_TXD/I2S_TX_FS output valid — 63 ns
S16 I2S_TX_BCLK to I2S_TXD/I2S_TX_FS output invalid 0 — ns
S17 I2S_RXD setup before I2S_RX_BCLK 30 — ns
S18 I2S_RXD hold after I2S_RX_BCLK 2 — ns
S19 I2S_TX_FS input assertion to I2S_TXD output valid1— 72 ns
1. Applies to first bit in each frame and only if the TCR4[FSE] bit is clear
S15
S13
S15
S17 S18
S15
S16
S16
S14
S16
S11
S12
S12
I2S_TX_BCLK/
I2S_RX_BCLK (input)
I2S_TX_FS/
I2S_RX_FS (output)
I2S_TXD
I2S_RXD
I2S_TX_FS/
I2S_RX_FS (input) S19
Figure 22. I2S/SAI timing — slave modes
6.9 Human-machine interfaces (HMI)
6.9.1 TSI electrical specifications
Table 34. TSI electrical specifications
Symbol Description Min. Typ. Max. Unit Notes
VDDTSI Operating voltage 1.71 — 3.6 V
CELE Target electrode capacitance range 1 20 500 pF 1
Table continues on the next page...
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 51
Table 34. TSI electrical specifications (continued)
Symbol Description Min. Typ. Max. Unit Notes
fREFmax Reference oscillator frequency — 8 15 MHz 2, 3
fELEmax Electrode oscillator frequency — 1 1.8 MHz 2, 4
CREF Internal reference capacitor — 1 — pF
VDELTA Oscillator delta voltage — 500 — mV 2, 5
IREF Reference oscillator current source base current
•2 μA setting (REFCHRG = 0)
•32 μA setting (REFCHRG = 15)
—
—
2
36
3
50
μA 2, 6
IELE Electrode oscillator current source base current
•2 μA setting (EXTCHRG = 0)
•32 μA setting (EXTCHRG = 15)
—
—
2
36
3
50
μA 2, 7
Pres5 Electrode capacitance measurement precision — 8.3333 38400 fF/count 8
Pres20 Electrode capacitance measurement precision — 8.3333 38400 fF/count 9
Pres100 Electrode capacitance measurement precision — 8.3333 38400 fF/count 10
MaxSens Maximum sensitivity 0.008 1.46 — fF/count 11
Res Resolution — — 16 bits
TCon20 Response time @ 20 pF 8 15 25 μs 12
ITSI_RUN Current added in run mode — 55 — μA
ITSI_LP Low power mode current adder — 1.3 2.5 μA 13
1. The TSI module is functional with capacitance values outside this range. However, optimal performance is not guaranteed.
2. Fixed external capacitance of 20 pF.
3. REFCHRG = 2, EXTCHRG=0.
4. REFCHRG = 0, EXTCHRG = 10.
5. VDD = 3.0 V.
6. The programmable current source value is generated by multiplying the SCANC[REFCHRG] value and the base current.
7. The programmable current source value is generated by multiplying the SCANC[EXTCHRG] value and the base current.
8. Measured with a 5 pF electrode, reference oscillator frequency of 10 MHz, PS = 128, NSCN = 8; Iext = 16.
9. Measured with a 20 pF electrode, reference oscillator frequency of 10 MHz, PS = 128, NSCN = 2; Iext = 16.
10. Measured with a 20 pF electrode, reference oscillator frequency of 10 MHz, PS = 16, NSCN = 3; Iext = 16.
11. Sensitivity defines the minimum capacitance change when a single count from the TSI module changes. Sensitivity
depends on the configuration used. The documented values are provided as examples calculated for a specific
configuration of operating conditions using the following equation: (Cref * Iext)/( Iref * PS * NSCN)
The typical value is calculated with the following configuration:
Iext = 6 μA (EXTCHRG = 2), PS = 128, NSCN = 2, Iref = 16 μA (REFCHRG = 7), Cref = 1.0 pF
The minimum value is calculated with the following configuration:
Iext = 2 μA (EXTCHRG = 0), PS = 128, NSCN = 32, Iref = 32 μA (REFCHRG = 15), Cref = 0.5 pF
The highest possible sensitivity is the minimum value because it represents the smallest possible capacitance that can be
measured by a single count.
12. Time to do one complete measurement of the electrode. Sensitivity resolution of 0.0133 pF, PS = 0, NSCN = 0, 1
electrode, EXTCHRG = 7.
13. REFCHRG=0, EXTCHRG=4, PS=7, NSCN=0F, LPSCNITV=F, LPO is selected (1 kHz), and fixed external capacitance of
20 pF. Data is captured with an average of 7 periods window.
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
52 Freescale Semiconductor, Inc.
7 Dimensions
7.1 Obtaining package dimensions
Package dimensions are provided in package drawings.
To find a package drawing, go to http://www.freescale.com and perform a keyword
search for the drawing’s document number:
If you want the drawing for this package Then use this document number
32-pin QFN 98ARE10566D
8 Pinout
8.1 K10 Signal Multiplexing and Pin Assignments
The following table shows the signals available on each pin and the locations of these
pins on the devices supported by this document. The Port Control Module is responsible
for selecting which ALT functionality is available on each pin.
32
QFN
Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 EzPort
1 VDD VDD VDD
2 VSS VSS VSS
3 PTE16 ADC0_SE4a ADC0_SE4a PTE16 SPI0_PCS0 UART2_TX FTM_CLKIN0 FTM0_FLT3
4 PTE17 ADC0_SE5a ADC0_SE5a PTE17 SPI0_SCK UART2_RX FTM_CLKIN1 LPTMR0_ALT3
5 PTE18 ADC0_SE6a ADC0_SE6a PTE18 SPI0_SOUT UART2_CTS_b I2C0_SDA
6 PTE19 ADC0_SE7a ADC0_SE7a PTE19 SPI0_SIN UART2_RTS_b I2C0_SCL
7 VDDA VDDA VDDA
8 VSSA VSSA VSSA
9 XTAL32 XTAL32 XTAL32
10 EXTAL32 EXTAL32 EXTAL32
11 VBAT VBAT VBAT
12 PTA0 JTAG_TCLK/
SWD_CLK/
EZP_CLK
TSI0_CH1 PTA0 UART0_CTS_
b/
UART0_COL_b
FTM0_CH5 JTAG_TCLK/
SWD_CLK
EZP_CLK
13 PTA1 JTAG_TDI/
EZP_DI
TSI0_CH2 PTA1 UART0_RX FTM0_CH6 JTAG_TDI EZP_DI
Dimensions
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 53
32
QFN
Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 EzPort
14 PTA2 JTAG_TDO/
TRACE_SWO/
EZP_DO
TSI0_CH3 PTA2 UART0_TX FTM0_CH7 JTAG_TDO/
TRACE_SWO
EZP_DO
15 PTA3 JTAG_TMS/
SWD_DIO
TSI0_CH4 PTA3 UART0_RTS_b FTM0_CH0 JTAG_TMS/
SWD_DIO
16 PTA4/
LLWU_P3
NMI_b/
EZP_CS_b
TSI0_CH5 PTA4/
LLWU_P3
FTM0_CH1 NMI_b EZP_CS_b
17 PTA18 EXTAL0 EXTAL0 PTA18 FTM0_FLT2 FTM_CLKIN0
18 PTA19 XTAL0 XTAL0 PTA19 FTM1_FLT0 FTM_CLKIN1 LPTMR0_ALT1
19 RESET_b RESET_b RESET_b
20 PTB0/
LLWU_P5
ADC0_SE8/
TSI0_CH0
ADC0_SE8/
TSI0_CH0
PTB0/
LLWU_P5
I2C0_SCL FTM1_CH0 FTM1_QD_
PHA
21 PTB1 ADC0_SE9/
TSI0_CH6
ADC0_SE9/
TSI0_CH6
PTB1 I2C0_SDA FTM1_CH1 FTM1_QD_
PHB
22 PTC1/
LLWU_P6
ADC0_SE15/
TSI0_CH14
ADC0_SE15/
TSI0_CH14
PTC1/
LLWU_P6
SPI0_PCS3 UART1_RTS_b FTM0_CH0 I2S0_TXD0
23 PTC2 ADC0_SE4b/
CMP1_IN0/
TSI0_CH15
ADC0_SE4b/
CMP1_IN0/
TSI0_CH15
PTC2 SPI0_PCS2 UART1_CTS_b FTM0_CH1 I2S0_TX_FS
24 PTC3/
LLWU_P7
CMP1_IN1 CMP1_IN1 PTC3/
LLWU_P7
SPI0_PCS1 UART1_RX FTM0_CH2 I2S0_TX_BCLK
25 PTC4/
LLWU_P8
DISABLED PTC4/
LLWU_P8
SPI0_PCS0 UART1_TX FTM0_CH3 CMP1_OUT
26 PTC5/
LLWU_P9
DISABLED PTC5/
LLWU_P9
SPI0_SCK LPTMR0_ALT2 I2S0_RXD0 CMP0_OUT
27 PTC6/
LLWU_P10
CMP0_IN0 CMP0_IN0 PTC6/
LLWU_P10
SPI0_SOUT PDB0_EXTRG I2S0_RX_BCLK I2S0_MCLK
28 PTC7 CMP0_IN1 CMP0_IN1 PTC7 SPI0_SIN I2S0_RX_FS
29 PTD4/
LLWU_P14
DISABLED PTD4/
LLWU_P14
SPI0_PCS1 UART0_RTS_b FTM0_CH4 EWM_IN
30 PTD5 ADC0_SE6b ADC0_SE6b PTD5 SPI0_PCS2 UART0_CTS_
b/
UART0_COL_b
FTM0_CH5 EWM_OUT_b
31 PTD6/
LLWU_P15
ADC0_SE7b ADC0_SE7b PTD6/
LLWU_P15
SPI0_PCS3 UART0_RX FTM0_CH6 FTM0_FLT0
32 PTD7 DISABLED PTD7 CMT_IRO UART0_TX FTM0_CH7 FTM0_FLT1
8.2 K10 Pinouts
The below figure shows the pinout diagram for the devices supported by this document.
Many signals may be multiplexed onto a single pin. To determine what signals can be
used on which pin, see the previous section.
Pinout
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
54 Freescale Semiconductor, Inc.
32
31
30
29
28
27
26
25
PTD7
PTD6/LLWU_P15
PTD5
PTD4/LLWU_P14
PTC7
PTC6/LLWU_P10
PTC5/LLWU_P9
PTC4/LLWU_P8
PTA0
VBAT
EXTAL32
XTAL32
12
11
10
9
PTA4/LLWU_P3
PTA3
PTA2
PTA1
16
15
14
13
PTB0/LLWU_P5
RESET_b
PTA19
PTA18
24
23
22
21
20
19
18
17
PTC3/LLWU_P7
PTC2
PTC1/LLWU_P6
PTB1
VSSA
VDDA
PTE19
PTE18
PTE17
PTE16
VSS
VDD
8
7
6
5
4
3
2
1
Figure 23. K10 32 QFN Pinout Diagram
9 Revision History
The following table provides a revision history for this document.
Table 35. Revision History
Rev. No. Date Substantial Changes
2 2/2012 Initial public release
3 4/2012 • Replaced TBDs throughout.
• Updated "Power mode transition operating behaviors" table.
• Updated "Power consumption operating behaviors" table.
• For "Diagram: Typical IDD_RUN operating behavior" section, added "VLPR mode
supply current vs. core frequency" figure.
• Updated "EMC radiated emissions operating behaviors" section.
• Updated "Thermal operating requirements" section.
• Updated "MCG specifications" table.
• Updated "VREF full-range operating behaviors" table.
• Updated "I2S/SAI Switching Specifications" section.
• Updated "TSI electrical specifications" table.
Table continues on the next page...
Revision History
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 55
Table 35. Revision History (continued)
Rev. No. Date Substantial Changes
4 5/2012 • For the "32kHz oscillator frequency specifications", added specifications for an
externally driven clock.
• Renamed section "Flash current and power specfications" to section "Flash high
voltage current behaviors" and improved the specifications.
• For the "VREF full-range operating behaviors" table, removed the Ac (aging coefficient)
specification.
• Corrected the following DSPI switching specifications: tightened DS5, DS6, and DS7;
relaxed DS11 and DS13.
• Removed references to USB as non-applicable.
• For the "TSI electrical specifications", changed and clarified the example calculations
for the MaxSens specification.
Revision History
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
56 Freescale Semiconductor, Inc.
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Document Number: K10P32M50SF0
Rev. 4 5/2012
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