AP2N7002K RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Small Package Outline D Surface Mount Device BVDSS 60V RDS(ON) 2 ID RoHS Compliant 450mA S SOT-23 Description G D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. G The SOT-23 package is universally used for all commercial-industrial applications. S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 60 V +20 V 3 450 mA 3 360 mA Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current 950 mA PD@TA=25 Total Power Dissipation 0.7 W Linear Derating Factor 0.005 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 180 /W 1 201006244 AP2N7002K Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 60 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.06 - V/ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=450mA - - 2 VGS=4.5V, ID=200mA - - 4 VGS=0V, ID=250uA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 2.5 V gfs Forward Transconductance VDS=10V, ID=450mA - 400 - mS IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=70 C) VDS=48V ,VGS=0V - - 100 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA ID=450mA - 1 1.6 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=50V - 0.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 0.5 - nC VDS=30V - 12 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=450mA - 10 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 56 - ns tf Fall Time RD=52 - 29 - ns Ciss Input Capacitance VGS=0V - 32 50 pF Coss Output Capacitance VDS=25V - 8 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF Min. Typ. - - Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage Test Conditions IS=450mA, VGS=0V Max. Units 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board t10sec; 400/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2N7002K 1.0 1.0 0.8 ID , Drain Current (A) ID , Drain Current (A) 0.8 0.6 V G = 3.0 V 0.4 0.6 V G = 3.0 V 0.4 0.2 0.2 0.0 0.0 0.0 2.0 4.0 0 6.0 2 4 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3.0 2.0 I D = 450m A V G =10V I D = 200m A o T A =25 C Normalized RDS(ON) 2.5 RDS(ON) (m) 10V 7.0V 5.0V 4.5V o T A = 150 C 10V 7.0V 5.0V 4.5V T A =25 o C 2.0 1.5 1.0 1.5 0.5 1.0 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.7 Normalized VGS(th) (V) 0.6 0.4 IS(A) T j =150 o C T j =25 o C 0.2 1.3 0.9 0.5 0 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2N7002K f=1.0MHz 100 I D = 450m A 12 C iss V DS = 30 V V DS =40V V DS =50V C (pF) VGS , Gate to Source Voltage (V) 16 8 10 C oss C rss 4 1 0 0 0.5 1 1.5 1 2 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1.000 1ms 10ms ID (A) 0.100 100ms 1s 0.010 T A =25 o C Single Pulse DC 0.001 Normalized Thermal Response (Rthja) 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.01 T Single Pulse 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 400/W 0.001 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 1.0 VG V DS =5V ID , Drain Current (A) 0.8 T j =25 o C QG T j =150 o C 4.5V 0.6 QGS QGD 0.4 0.2 Charge Q 0.0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4