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October, 2010 − Rev. 1

1Publication Order Number:

BTA30−600CW3/D

BTA30-600CW3G,

BTA30-800CW3G

Triacs

Silicon Bidirectional Thyristors

Designed for high performance full-wave ac control applications

where high noise immunity and high commutating di/dt are required.

Features

•Blocking Voltage to 800 Volts

•On-State Current Rating of 30 Amperes RMS at 95°C

•Uniform Gate Trigger Currents in Three Quadrants

•High Immunity to dV/dt − 500 V/ms minimum at 125°C

•Minimizes Snubber Networks for Protection

•Industry Standard TO-220AB Package − Internally Isolated

•High Commutating dI/dt − 4.0 A/ms minimum at 125°C

•Internally Isolated (2500 VRMS)

•These are Pb−Free Devices

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetitive Off−State Voltage (Note 1)

(TJ = −40 to 125°C, Sine Wave,

50 to 60 Hz, Gate Open)

BTA30−600CW3G

BTA30−800CW3G

VDRM,

VRRM

600

800

On-State RMS Current (Full Cycle Sine

Wave, 60 Hz, TC = 95°C)

IT(RMS) 30 A

Peak Non-Repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,

TJ(initial) = 25°C)

ITSM 400 A

Circuit Fusing Consideration (t = 8.3 ms) I2t 667 A2sec

Non−Repetitive Surge Peak Off−State

Voltage (TJ = 25°C, t = 8.3 ms)

VDSM/

VRSM

VDRM/VRRM

+100

Peak Gate Current (TJ = 125°C, t ≤ 20 ms) IGM 4.0 A

Average Gate Power (TJ = 125°C) PG(AV) 0.5 W

Operating Junction Temperature Range TJ−40 to +125 °C

Storage Temperature Range Tstg −40 to +150 °C

RMS Isolation Voltage

(t = 300 ms, R.H. ≤ 30%, TA = 25°C)

Viso 2500 V

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

TRIACS

30 AMPERES RMS

600 thru 800 VOLTS

TO−220AB

CASE 221A

STYLE 12

http://onsemi.com

BTA30−xCWG

AYWW

MARKING

DIAGRAM

x = 6 or 8

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

Device Package Shipping

ORDERING INFORMATION

BTA30−600CW3G TO−220AB

(Pb−Free)

50 Units / Rail

PIN ASSIGNMENT

3 Gate

Main Terminal 1

Main Terminal 2

4No Connection

MT1

MT2

BTA30−800CW3G TO−220AB

(Pb−Free)

50 Units / Rail

*For additional information on our Pb−Free strategy and

soldering details, please download the ON Semicon-

ductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

BTA30−600CW3G, BTA30−800CW3G

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THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance, Junction−to−Case (AC)

Junction−to−Ambient

RqJC

RqJA

1.8

°C/W

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds TL260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C

TJ = 125°C

IDRM,

IRRM −

−

0.005

ON CHARACTERISTICS

Peak On-State Voltage (Note 2)

(ITM = ±42 A Peak)

VTM − − 1.55 V

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

IGT

−

Holding Current

(VD = 12 V, Gate Open, Initiating Current = ±100 mA)

IH− − 50 mA

Latching Current (VD = 12 V, IG = 42 mA)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

−

Gate Trigger Voltage (VD = 12 V, RL = 30 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

VGT

−

1.3

Gate Non−Trigger Voltage (TJ = 125°C)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

VGD

0.15

−

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current, See Figure 10.

(Gate Open, TJ = 125°C, No Snubber)

(dI/dt)c4.0 − − A/ms

Critical Rate of Rise of On−State Current

(TJ = 125°C, f = 120 Hz, IG = 70 mA, tr ≤100 ns)

dI/dt − − 50 A/ms

Critical Rate of Rise of Off-State Voltage

(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)

dV/dt 500 − − V/ms

2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

BTA30−600CW3G, BTA30−800CW3G

http://onsemi.com

+ Current

+ Voltage

VTM

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

Voltage Current Characteristic of Triacs

(Bidirectional Device)

IDRM at VDRM

on state

off state

IRRM at VRRM

Quadrant 1

MainTerminal 2 +

Quadrant 3

MainTerminal 2 −VTM

VTM Maximum On State Voltage

IHHolding Current

MT1

(+) IGT

GATE

(+) MT2

REF

MT1

(−) IGT

GATE

(+) MT2

REF

MT1

(+) IGT

GATE

(−) MT2

REF

MT1

(−) IGT

GATE

(−) MT2

REF

−

MT2 NEGATIVE

(Negative Half Cycle)

MT2 POSITIVE

(Positive Half Cycle)

Quadrant III Quadrant IV

Quadrant II Quadrant I

Quadrant Definitions for a Triac

IGT −+ IGT

All polarities are referenced to MT1.

With in−phase signals (using standard AC lines) quadrants I and III are used.

BTA30−600CW3G, BTA30−800CW3G

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Figure 1. RMS Current Derating

IT(RMS), RMS ON-STATE CURRENT (A)

Figure 2. On-State Power Dissipation

Figure 3. On-State Typical Characteristics

, INSTANTANEOUS ON-STATE VOLTAGE (V)

Figure 4. Thermal Response

Figure 5. Holding Current Variation

3020151050

100

105

110

115

120

125

TC, CASE TEMPERATURE (°C)

3020151050

IT(RMS), ON-STATE CURRENT (A)

PAV, AVERAGE POWER (W)

TJ, JUNCTION TEMPERATURE (°C)

12565205−10−40

IH, HOLDING CURRENT (mA)

−25 35 50 11080 95

MT2 NEGATIVE

MT2 POSITIVE

1000

100

0.1

0 0.5 1.0 1.5 2.0 2.5 3.0

TJ = 25°C

TJ = 125°C

, INSTANTANEOUS ON-STATE CURRENT (A)

t, TIME (ms)

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

0.1

0.01 1·104

10001001010.1

BTA30−600CW3G, BTA30−800CW3G

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RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)

5000

010000100010010

dv/dt , CRITICAL RATE OF RISE OF OFF‐STATE VOLTAGE (V/ s)μ

VD = 800 Vpk

TJ = 125°C

LL1N4007

200 V

MEASURE

CHARGE

CONTROL

CHARGE TRIGGER

NON‐POLAR

51 W

MT2

MT1

1N914

TRIGGER CONTROL

200 VRMS

ADJUST FOR

ITM, 60 Hz VAC

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Gate Trigger Current Variation

TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Gate Trigger Voltage Variation

12595505−10−40

IGT

, GATE TRIGGER CURRENT (mA)

−25 20 35 65 80 110

VD = 12 V

RI = 30 W

12595505−10−40

0.1

0.3

0.5

0.9

1.1

1.3

VGT

, GATE TRIGGER VOLTAGE (V)

−25 20 35 65 80 110

VD = 12 V

RI = 30 W

0.7

TJ, JUNCTION TEMPERATURE (°C)

12595505−10−40

IL, LATCHING CURRENT (mA)

−25 20 35 65 80 110

VD = 12 V

RI = 30 W

Figure 8. Critical Rate of Rise of Off-State Voltage

(Exponential Waveform)

Figure 9. Latching Current Variation

Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

BTA30−600CW3G, BTA30−800CW3G

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PACKAGE DIMENSIONS

TO−220

CASE 221A−07

ISSUE AA

STYLE 12:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

4. NOT CONNECTED

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.014 0.022 0.36 0.55

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

−T−SEATING

PLANE

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BTA30−600CW3/D

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