BF256A BF256A is a Preferred Device JFET - General Purpose N-Channel N-Channel Junction Field Effect Transistor designed for VHF and UHF applications. * * * * http://onsemi.com Low Cost TO-92 Type Package Forward Transfer Admittance, Yfs = 4.5 mmhos (Min) Transfer Capacitance - Crss = 0.7 (Typ) Power Gain at f = 800 MHz, Typ. = 11 dB 1 DRAIN 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 30 Vdc Drain-Gate Voltage VDG 30 Vdc Gate-Source Voltage VGS 30 Vdc Forward Gate Current IG(f) 10 mAdc 360 2.88 mW mW/C -65 to +150 C Total Device Dissipation 2 SOURCE TO-92 CASE 29 STYLE 5 1 2 3 MARKING DIAGRAMS PD @ TA = 25C Derate above 25C Operating and Storage Channel Temperature Range Tchannel, Tstg BF 256A YWW PD, MAXIMUM CONTINUOUS POWER DISSIPATION (mW) 500 Y WW = Year = Work Week 400 ORDERING INFORMATION 300 Device BF256A Package Shipping TO-92 5000 Units/Box 200 Preferred devices are recommended choices for future use and best overall value. 100 0 0 25 50 75 100 125 150 175 200 FREE AIR TEMPERATURE (C) Figure 1. Power Derating Curve Semiconductor Components Industries, LLC, 2001 September, 2001 - Rev. 3 1 Publication Order Number: BF256A/D BF256A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (-IG = -1.0 Adc, VDS = 0) Gate-Source Breakdown Voltage -V(BR)GSS 30 - -- Vdc Gate-Source Voltage (VDS = 15 Vdc, ID = 200 A) -VGS 0.5 -- 7.5 Vdc Gate Reverse Current (-VGS = 20 Vdc, VDS = 0) -IGSS -- -- 5.0 nAdc (VDS = 15 Vdc, VGS = 0) IDSS 3.0 - 7.0 mAdc ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (Note 1.) SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance Reverse Transfer Capacitance Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1 kHz) |Yfs| 4.5 5.0 - mmhos (VDS = 20 Vdc, -VGS = 1 Vdc, f = 1 MHz) Crss - 0.7 - pF (VDS = 20 Vdc, VGS = 0, f = 1 MHz) Coss - 1.0 - pF fgfs - 1000 - MHz Cut-Off Frequency (Note 2.) (VDS = 15 Vdc, VGS = 0) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. 10 5 9 4.5 ID, DRAIN CURRENT (mA) GATE-SOURCE CUTOFF VOLTAGE (-VGS(off) @ ID = 10 nA) 2. The frequency at which gfs is 0.7 of its value at 1 KHz. VDS = 15 Vdc 8 7 6 5 4 3 2 1 0 -VGS = 0 V 4 3.5 3 0.2 V 2.5 2 0.4 V 1.5 0.6 V 1 0.8 V 0.5 BF256A 0 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 IDSS, DRAIN CURRENT (mA) @ VGS = 0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2. Correlation Between -VGS(off) and IDSS Figure 3. Drain Current versus Drain-to-Source Voltage http://onsemi.com 2 20 VDS = 15 Vdc VGS = 0 Yis = gis + jbis bis 1 10 1 0.1 -gis 0.1 1000 0.01 100 100 VDS = 15 Vdc VGS = 0 Yfs = gfs - jbfs 10 10 gfs -bfs 1 1 10 0.1 1000 100 f, FREQUENCY (MHz) Figure 4. Input Admittance versus Frequency Figure 5. Forward Transfer Admittance versus Frequency 10 VDS = 15 Vdc VGS = 0 Yrs = -grs - jbrs 0.1 1 -brs -grs 0.01 0.1 100 10 VDS = 15 Vdc VGS = 0 Yos = gos + jbos gos 0.1 1 bos 0.1 0.01 0.01 10 1 0.01 1000 0.001 1000 10 100 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 6. Reverse Transfer Admittance versus Frequency Figure 7. Output Admittance versus Frequency 5 bos, OUTPUT SUSCEPTANCE (mmhos) 1 gos, OUTPUT CONDUCTANCE (mmhos) f, FREQUENCY (MHz) 0.001 1.0 Crss, REVERSE TRANSFER CAPACITANCE (pF) Ciss, INPUT CAPACITANCE (pF) 100 0.1 -brs, REVERSE SUSCEPTANCE (mmhos) -grs, REVERSE TRANSCONDUCTANCE (mmhos) 10 gfs, FORWARD TRANSCONDUCTANCE (mmhos) 100 -bfs, FORWARD SUSCEPTANCE (mmhos) 10 bis, INPUT SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) BF256A VDS = 20 Vdc f = 1 MHz 4 3 2 1 0 0.5 VDS = 20 Vdc f = 1 MHz 0 0 1 2 3 4 5 6 7 8 9 0 10 2 4 6 8 -VGS, GATE-SOURCE VOLTAGE (VOLTS) -VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 8. Input Capacitance versus Gate-Source Voltage Figure 9. Reverse Transfer Capacitance versus Gate-Source Voltage http://onsemi.com 3 10 BF256A PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X-X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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