SD2440 Silicon Phototransistor FEATURES = Miniature, hermetically sealed, pil style, metal can package * 48 acceplance ange * Wide operating temperature range (- 55% to +1260) Ideal for direct mounting to printed circuit boards * Wide sensitivity ranges fdechanically and spectrally matched to SE2460 a and SE 2470 intra eritting dicdes INFBA-1 TF DESCRIPTION OUTLINE DIMENSIONS in inches (mm The S02440i8 an NPN silicon phototransistor mounted Tderanc= = ple decimals = 20.006/0.12) ina hennetically sealed glass lensed metal can ape decimals +0.0@0/0.51) packages. This package directly mounts in a double : sided PC board. DOT. ja OS al ooo Oo if COLLECTOR ASHER? aurea DA Hivodr fe & Sw) Bok BB paca |e eg a I = = Hhit: FER PIED AB 1006-1018 ARS: 518033 Bin: OT55-89279118/892 786909892 78860 +B: O755-89279285 fijdit: wew. apollosz. com Aisa: Sensor@apoel losz. comSD2440 Silicon Photetransistor ELECTRICAL CHARACTERISTICS Gag Unie ORM MAME FCC} | PARAMETER SYMBOL | MIN TYP MA UNITS TEST CONDITIONS [Light Gumrent h rr Voom V S024 o.B Heo mare a S02? aa BO 4.5 Sei 7.e Coleier Car Curent inue ix na Vewmi0 , Hed Celecto- Emitter Breeieiown vollecs Views | 30 = 100 pk Erritige Coleqtor Anepkriaen Sptece Vewwes | 56 v lee TS | CT -ETthe SAMO ORE Vemma} 4 eee Ae Angier Famers ' a pty P= | per ealeunt Pulge fuel Fac!] Tires be 15 i Veeed y, koed ot Pyet000 Ct hic 2 Tham eae ae te ald Bi ah Neg geri tec Tigi bd DE 2 Angulr meapones ia Gefined a tha Iota! Incluriad angie besbewen ine hai? senalivly poirie. ABSOLUTE MASIMUM RATINGS SCHEMATIC (25C Free-Alr Temperature unkes otherwise noted Gameotar Collector-Emitter Voltage a0 Emitter-Collector Voltage 5 Power Dissipation 125 mvy "1! Operating Temperature Range -BSC to 126C Storage Temperature Range -BSC to 160C a Soldering Temperature (10 sec 280C cee kK Noobos: 1. Derate lircerty from 25C {res-air bamperalure at the riba ol 1.48 mie. u Exnditcr fe & Sw a) Bk BB im Ul th YZ 7 FBO 2 ol Hh: aed PPI A 1006-1018 aaa: 518033 Hig: 0755-83279118/83278699/83278860 4H: 0755-83279283 fijdtit: www. apollosz. com Higa: Sensor@apal lasz. com5D2440 Silicon Photetransistor SWITCHING TIME TEST CIRCUIT ceo Wis +i + Gallociar Fig. 1 Rlesponeivity ws Angular Displacement DO det 1.0 rrrren LLLLLIIO ue Relative reaponae -AD 4-3-1541 400 445 +80 Angular displacement - degrees Fig. Dark Current vs Tanperature wot nih REE VE = 1B Hail Chey cure - i Bele Freel teanseratume - 9G fr & if wi Bub ap Hhit: FER PIED AB 1006-1018 Mif: O755-892779118/892786909/ 89278860 fijiit; www. apo! lesz, com SWITCHING WAVEFORM m4 ch Fig. 2 Collector Current vs Aribient Temperature Obie 2.0 tl LALIT IL ee ret L ab - | | | | I cet wre p tp 1 | | + | 14-4 | a Nonmalized mollector cumenit 0.0 I qT qT qT T T T T 10 2 Mw 40 60 Bo 7 OB Ambient temperature - Fig.4 0 Non-Saturated Switching Time ws Load Resistance 7b = SHE os DHE SS + AME + Bae SSB fe tm a et | + EH Recmiee Gere - us 1 TL EUIIMI 10 100 1000 10000 Load resistance - Ohms im Dl Th 7 2 78 FBR 2 ol Aaa: 518033 fH: 0755-89279283 Aisa: Sensor@apel lasz. com5D2440 Silicon Photetransistor Fig. 5 = Spectral Responsivity Fig. 6 = Goupling Characteristics eu 0G del with SE 2460 ya be is TTT he TTTTTITIII 1 2 OB LEU ag CECT 5 ar CCOM Boar 0.68 LL Be O6 2 as {LL & H o5 2 4 LE @ a oa 3 aa +EHH Eas Q27-FYA 4 t+4t++RE+EEH- = 0.2 of Att+teE-FR ERE AI 7 460 600 BOO 1000 1200 mo 02 04 08 O8 10 12 Wavelength - nm Lens-to-lens separation - inches All Peformance Curves Show Typical Values fe & Sw a) Bk BB im Ul th YZ 7 FBO 2 ol Hitt: FEV PIED AB 1006-1018 Bisa: 518033 Bif: O755-892979118/83278699/832 78860 EH: 0756-83279284 faltit: www, apollosz. com Hiza: Sensor@apoal losz. com