Large-signal Power MOSFETs (3) 0 The Sanyo J-MOS series utilizes Sanyos own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and LD Series offer the most suitable devices to meet specific needs. In addition to the below SANYO has a wide variety of package of small-signal power MOSFET series. See the tables on other pages, aio AP Sories (Advanced Performance ) The AP Series provides an on-state resistance approximately 40% lower than the existing J-MOS series. A precisely controlled, channel forming process is used to achieve a threshold value variation width of 0.5V resulting in easy parallel connection operation essential for large current circuits. (VGSt30V guaranteed in VDSS 450V series. } Designed as a power MOSFET with well-balanced characteristics, the AP Series provides the ultimate in high-power performance. The surface mounting TP, SMP and ZP package enables higher density assembly and higher reliability. Applications . ao. cos . * Battery charger, Ac adapter, motor control, inverter lighting, switching power supply, AV equipment etc. VDSS 100V system (2SJ type:P channel (-) sign is omitted.) Case Quit ings (uni t* mm) Absolute Maximum Ratings Electrical Characteristics/Ta=250 1:Gate, 2:Drain, 3:Source Type No. Package /Ta=25T Type No. 15.1 fe 14.0 a 7 be 18.0 : s:FRD Vngs Voss Ip lpp | 70, Vag loft) joa iss s:FRD Les. pea | T ui in c=. pin ~ max = wilt in a mio] ala Sal" a colfomx | GB We eT, tl 2SK1427 10/ 40] 40 120m/1600 | 750] 2SK1427 Ty" 2SK1428 T0-220 20| 80/ 60 75m/100m | 1200)2SK1428 7558 12 LO 25K1429 30] 120! 70 40m/55m_| 2400/28K1429 Jn al 28K1430 101 40] 25 120m/160m | _750|2SK1430 i 28K1431 | TO-220ML 15} 60] 30 750//100m | 1200|2SK1431 | 7 2SK1432 100 | +20} 25} 100] 40] 1.5~2.5 400/55m | 2400|25K1432 28K1433 TO-3PB 30| 120] 100 400/55m | 2400/2SK1433 YO: T0-220ML 25K1434 60| 240] 150 230/35m | 4800/2SK1434 OTe wo4 2k 28K1435 TO-3PML 30| 120] 60 40n/55m | 2400/2SK1435 Bey AE I 4 25K1436 50} 200] 80 2am/a5m_ | 4800/2SK1436 | f ob sewers) PT 2SK1437 T0-3PBL 70| 280| 200 16m/26n | 7200|2SK1437 | {bY it ton r Lys VDSS 200V system weg 2SK2864 ZP 20} 80] 50 2~4 900//120m | 1700/2SK2864 3 | ta 25K2970 13} 52] 40 2~5 180m/240m | 750] 2SK2970 qf! 28J403 5] 20] 25 0.8/1.1 550] 28J403 SANYO: TO-3PB 283404 6| 24] 25 0.6/0.8 700 | 28J404 20.0 25} 405 200 | +20/ 8] 32] 30 0.37/0.5 | 1100/28}405 283406 10-220ML 12} 48] 40) 1.5~2.5 0.17,/0.23 | 2400]2$)406 2SK2160 7| 28] 25 350m,450m | 550/2SK2160 2SK2161 9| 36| 25 250n//350m | 700/2SK2161 25K2378 13} 52) 30 160m210m | 1100]2SK2378 io 2SK2379 20| 30| 40 70m/95n | 2400|2SK2379 VDSS 250V system a 2S) 454% 5| 20] 40 0.851. 2 900] 25] 454# SANYO: TO=3PBL 28] 455% 7| 23| 45 0.60.85 | 1290]2S)455* . 25) 456% oP 9} 36} 50 oa 0.40.55 | 1950] 2S)456 2SK2531 6} 24/ 30 0.6/0.8 420| 2SK2531# 2SK2532" 10} 40} 40 0.28/0.39 | 900] 2Sk2532 25K2533% 13} 52} 45 0.20.27 | 1290|2SK2533 | Zi 28K2534% 16| 64| 50 0.13,//0.18 | 1950] 2SK2534* 2SK2321 SMP 12} 48] 70] 1.5~2.5 0, 25,0.35 | 1250]2SK2321 3 2SK2592" 13} 52] 60 2~3 0.20.27 | 1290|2Sk2592" | 3 salllee 4 28282 3] 12] 50 1.5/2 600] 25J282 JE 0-220 1.5~2.5 2SK1921 4| 16] 50 0.5/0.7 600] 2SK1921 28K2142 950 | 430-22 48) 7 0.25,/0.35 | 1250/2SK2142 2SK26B0LS 6| 24 25 0.6/0.8 420| 2SK2680LS! IES T0220F1 (LS) 19 40 30 2~3 0.28/70. 39 520 BSKOCBITSE ZSKZ682L5 . . 2SKZ682L 5" . 2SK2683LS 16} 64| 40 0,130.18 | 1950] 2S5K2683LSx PRD: Fast recovery diode 25306 3) 12] 25 1.5/2 600] 25]306 2SJ307 6} 24] 30 0.75/11 1250] 283307 ze 1 8) 2 Ae | IRIS TO-220ML 1.5~2.5 : 3 2SK2010 4] 16] 25 0.50.7 600]2SK2010 2SK2011 12] 48] 30 0.25/70.35 | 1250/2SK2011 FRD 2SK2012 18| 72) 40 0.12//0.16 | 2700]2SK2012 2SK2108 6| 24] 25 0.3805 750} 25K2108 Gate 2SK2058 TO-3PB 25| 100] 120 0.120.16 | 2700|2SK2058 5 ource Underlined type Nos. are before mass production. Take care to prevent device breakage from static electricity because MOSFETs cannot withstand much static electricity. These specifications are subject to change without notice. Next page. SANYO Electric Co., Ltd. Semiconductor Business Headquarters, TR Division. MT980623TR we 7997076 0019573 70,