HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6106
Issued Date : 1992.09.22
Revised Date : 2001.09.20
Page No. : 1/4
HPN2369A HSMC Product Specification
HPN2369A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HPN2369A is designed for general purpose switching and amplifier
applications.
Features
• Low Collector Saturation Voltage
• High Speed Switching Transistor
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature .......................................................................................................... -55 ~ +150 °C
Junction Temperature .................................................................................................. +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).............................................................................................. 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage....................................................................................................... 40 V
VCES Collector to Emitter Voltage..................................................................................................... 40 V
VCEO Collector to Emitter Voltage.................................................................................................... 15 V
VEBO Emitter to Base Voltage ......................................................................................................... 4.5 V
IC Collector Current ..................................................................................................................... 200 mA
ICM Peak Collector Current ......................................................................................................... 300 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 40 - - V IC=10uA, IE=0
BVCES 40 - - V IC=10uA, VBE=0
BVEBO 4.5 - - V IE=10uA, IC=0
IEBO - - 100 nA VEB=4V, IC=0
ICBO - - 400 nA VCB=20V, IE=0
ICES - - 400 nA VCE=40V, VBE=0
*VCE(sat)1 - - 200 mV IC=10mA, IB=1mA
*VCE(sat)2 - - 250 mV IC=30mA, IB=3mA
*VCE(sat)3 - - 300 mV IC=10mA, IB=10mA
*VCE(sat)4 - - 500 mV IC=100mA, IB=10mA
*VBE(sat) 700 - 850 mV IC=10mA, IB=1mA
*hFE1 40 - 120 IC=10mA, VCE=0.35V
*hFE2 30 - - IC=30mA, VCE=0.4V
*hFE3 20 - - IC=100mA, VCE=1V
fT 500 - - MHz IC=10mA, VCE=10V, f=100MHz
Cob - - 4 pF VCB=5V, f=1 MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6106
Issued Date : 1992.09.22
Revised Date : 2001.09.20
Page No. : 2/4
HPN2369A HSMC Product Specification
Characteristics Curve
Cu rrent Gain & Coll ector Current
1
10
100
0.1 1 10 100 1000
Collector Current (m A)
hFE
V
CE
=1V
Satur ation Vol ta ge & Col lector Cur rent
0.01
0.1
1
0.1 1 10 100
Collector Current (m A)
Saturation Vol t age ( V)
V
BE(sat)
@ I
C
=10I
B
V
CE(sat)
@ I
C
=10I
B
On Volt a ge & Collector Curr ent
0.1
1
0.1 1 10 100
Collector Current (m A)
On Volt age ( mV)
V
BE(on)
@ V
CE
=1V
Capacitan ce & Reverse-Biased Vol ta ge
1
10
0.1 1 10 100
Reverse-Biased Volt age (V)
Cap a c itance (pF)
Cob
Safe Operating Ar ea
1
10
100
1000
10000
1 10 100
Forw ar d Volt age- V
CE
(V)
Collector Current - I
C
(mA)
PT=1ms
PT=100ms
PT=1s
Cu toff Fr equency & Coll ect or Current
0.1
1
10
100
1000
10000
1 10 100
Colle c tor Current-I
C
(mA)
Cutoff Frequency (GHz)
fT @ V
CE
=10
V
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6106
Issued Date : 1992.09.22
Revised Date : 2001.09.20
Page No. : 3/4
HPN2369A HSMC Product Specification
PD-Ta
0
100
200
300
400
500
600
700
0 20 40 60 80 100 120 140 160
Ambient Temperat ure-Ta(
o
C)
Pow er Dissipat ion -PD(m W )
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6106
Issued Date : 1992.09.22
Revised Date : 2001.09.20
Page No. : 4/4
HPN2369A HSMC Product Specification
TO-92 Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56 α1-*5°-*5°
E - *0.0500 - *1.27 α2-*2°-*2°
F 0.1323 0.1480 3.36 3.76 α3-*2°-*2°
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life -Support Applicati ons, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Of fice And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
31
A
D
B
C
Iα1
E
F
α2
α3
G
H
2
Style: Pin 1.Emitter 2.Base 3.Collector
3-Lead TO-92 Plastic Package
HSMC Packa
g
e Code :
A
Marking:
HSMC Logo
Part Number
Date Code
Product Series
Rank
Laser Mark
HSMC Logo
Part Number
Product Series
Ink Mark
