www.irf.com 17/30/04
IRFP450NPbF
SMPS MOSFET
HEXFET® Power MOSFET
lSwitch Mode Power Supply (SMPS)
lUninterruptible Power Supply
lHigh Speed Power Switching
lLead-Free
Benefits
Applications
lLow Gate Charge Qg results in Simple
Drive Requirement
lImproved Gate, Avalanche and Dynamic
dv/dt Ruggedness
lFully Characterized Capacitance and
Avalanche Voltage and Current
lEffective Coss Specified (See AN 1001)
VDSS Rds(on) max ID
500V 0.37Ω14A
Typical SMPS Topologies
l Two transistor Forward
l Half Bridge and Full Bridge
l PFC Boost
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 8.8 A
IDM Pulsed Drain Current 56
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.6 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
PD- 95663
Notes through are on page 8
TO-247AC
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Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 7.9 ––– ––– S VDS = 50V, ID = 8.4A
QgTotal Gate Charge –– – –– – 7 7 I D = 14A
Qgs Gate-to-Source Charge ––– ––– 26 nC VDS = 400V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 34 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 20 ––– VDD = 250V
trRise Time ––– 63 ––– ID = 14A
td(off) Turn-Off Delay Time ––– 29 ––– RG = 6.2Ω
tfFall Time ––– 25 ––– VGS = 10V,See Fig. 10
Ciss Input Capacitance ––– 2260 ––– VGS = 0V
Coss Output Capacitance ––– 210 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 14 ––– pF ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 2410 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 59 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 110 –– – VGS = 0V, VDS = 0V to 400V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 170 mJ
IAR Avalanche Current––– 14 A
EAR Repetitive Avalanche Energy––– 20 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.4 V TJ = 25°C, IS = 14A, VGS = 0V
trr Reverse Recovery Time ––– 430 650 ns TJ = 25°C, IF = 14A
Qrr Reverse RecoveryCharge ––– 3.7 5 . 6 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
14
56
A
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.64
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40
Thermal Resistance
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.59 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.37 ΩVGS = 10V, ID = 8.4A
VGS(th) Gate Threshold Voltage 3.0 ––– 5 .0 V VDS = VGS, ID = 250µA
––– ––– 25 µA VDS = 500V, VGS = 0V
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V
IGSS
IDSS Drain-to-Source Leakage Current
IRFP450NPbF
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
14A
1
10
100
1 10 10
0
20µs PU LSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
V , Drain-to-Sou rce Voltage (V)
I , Drain-to-Source Current (A)
DS
D
6.0V
0.1
1
10
100
6.0 7.0 8.0 9.0 10
.0
V = 50 V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.1 1 10 10
0
20µs PU LSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
V , Drain-to-Sou rce Voltage (V)
I , Drain-to-Source Current (A)
DS
D
6.0V
IRFP450NPbF
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
020 40 60 80
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
14A
V = 100V
DS
V = 250V
DS
V = 400V
DS
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1 10 100 1000 10000
VDS , Drain-t oSource V oltage ( V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single P ulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
110 100 1000
VDS, Drain-to-S ourc e Volt age (V )
1
10
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + C
gd
IRFP450NPbF
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Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Durati on ( s ec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
2
4
6
8
10
12
14
T , Ca se Tempe rature ( C)
I , Drain Current (A)
°
C
D
IRFP450NPbF
6www.irf.com
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Juncti on Tempe r atur e ( C)
E , Single Pulse Avalanche Energy (m J)
J
AS
°
ID
TOP
BOTTOM
6.3A
8.9A
14A
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
IRFP450NPbF
www.irf.com 7
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRFP450NPbF
8www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 14A, di/dt ≤ 510A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting TJ = 25°C, L = 1.7mH
RG = 25Ω, IAS = 14A. (See Figure 12)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
TO-247AC Package Outline Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE:
A SSEMBLED O N W W 35, 2000
LO T C O D E 5657
WI TH ASSEMBL Y
THIS IS AN IRFPE30
IN THE ASSEMBLY LINE "H" 035H
LOGO
INTERNATIONAL
RECTIFIER IRFPE30
LOT CODE
ASSEMBLY
56 57
PART N UMBER
DATE C ODE
YEAR 0 = 200
0
WEEK 35
LINE H
Note: "P" in as s e m bly line
position indicates "Lead-Free"
