PD- 95663 SMPS MOSFET IRFP450NPbF HEXFET(R) Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN 1001) VDSS Rds(on) max ID 500V 0.37 14A l TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 14 8.8 56 200 1.6 30 5.0 -55 to + 150 Units A W W/C V V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Typical SMPS Topologies l l l Two transistor Forward Half Bridge and Full Bridge PFC Boost Notes through are on page 8 www.irf.com 1 7/30/04 IRFP450NPbF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 --- --- 3.0 --- --- --- --- Typ. --- 0.59 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.37 VGS = 10V, ID = 8.4A 5.0 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 7.9 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 20 63 29 25 2260 210 14 2410 59 110 Max. Units Conditions --- S VDS = 50V, ID = 8.4A 77 ID = 14A 26 nC VDS = 400V 34 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 14A ns --- RG = 6.2 --- VGS = 10V,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, V DS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, V DS = 0V to 400V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 170 14 20 mJ A mJ Typ. Max. Units --- 0.24 --- 0.64 --- 40 C/W Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 14 --- --- showing the A G integral reverse --- --- 56 S p-n junction diode. --- --- 1.4 V TJ = 25C, IS = 14A, VGS = 0V --- 430 650 ns TJ = 25C, IF = 14A --- 3.7 5.6 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFP450NPbF 100 100 VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V 10 1 6.0V 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 10 6.0V 1 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 3.0 TJ = 150 C 10 TJ = 25 C V DS = 50V 20s PULSE WIDTH 7.0 8.0 9.0 Fig 3. Typical Transfer Characteristics www.irf.com 100 Fig 2. Typical Output Characteristics 100 VGS , Gate-to-Source Voltage (V) 10 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 0.1 6.0 20s PULSE WIDTH TJ = 150 C 1 100 VDS , Drain-to-Source Voltage (V) 1 VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10.0 ID = 14A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFP450NPbF 100000 VGS , Gate-to-Source Voltage (V) 10000 C, Capacitance(pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 1000 Coss 100 10 Crss 1 1 10 100 ID = 14A VDS = 400V VDS = 250V VDS = 100V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 1000 0 VDS, Drain-to-Source Voltage (V) 0 20 40 60 80 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100 10 TJ = 150 C 1 TJ = 25 C 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1.4 100 10 100sec 1msec 1 Tc = 25C Tj = 150C Single Pulse 10msec 0.1 1 10 100 1000 10000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFP450NPbF 14 V DS VGS ID , Drain Current (A) 12 RD D.U.T. RG + -VDD 10 10V 8 Pulse Width 1 s Duty Factor 0.1 % 6 Fig 10a. Switching Time Test Circuit 4 VDS 2 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 0.02 0.01 0.01 0.00001 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V L VDS DRIVER D.U.T RG + V - DD IAS 20V 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) IRFP450NPbF 300 TOP 250 BOTTOM ID 6.3A 8.9A 14A 200 150 100 50 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F VGS QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFP450NPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D.U.T + - - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFP450NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBE R INTERNATIONAL RECTIFIER LOGO IRF PE30 56 ASSEMBLY LOT CODE 035H 57 DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 1.7mH RG = 25, IAS = 14A. (See Figure 12) Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ISD 14A, di/dt 510A/s, VDD V(BR)DSS, TJ 150C Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 8 www.irf.com