S G S=-THOMSON s1c D B eses237 go0e444 4 f < # THOMSON-CSF Le DIVISION SEMICONDUCTEURS - * - - 59C 02444 BZV16C3V3 BZV16C200 oD TMS. ZENER DIODES DIODES ZENER offering the following advantages : @ Large voltage range :3,3 V to 200 V @ Pro Electron registration @ High surge capability : 80 W @ 10 ms les avantages suivants : @ Enregistrement Pro Electron \ : 3 W silicon Zener diodes, hermetically seated : metal according to normalization CCTU : F 61 Diodes Zener de 3 W au silicium, encapsules mtal sefon normalisation CCTU : F 61 offrant @ Gamme de tension tendue :3,3V 4200V @ Forte tenue en surcharge : 80 W@ 10 ms , Prot = 3W 3.3 V < VzT nom < 200 V ) ( case ) Boitier DO-13 (CB-37) (as SOLUTE RATINGS (LIMITING VALUES} VALEURS LIMITES ABSOLUES D'UTILISATION Tamb = 25C d= 10mm DC power dissipation (see fig. 1} Dissipation de puissance en rgime p tvoir fig. 1) Prot 3 w i Continuous reverse current i See page 2 mA Courant inverse continu 2M Voir page 2 Non repetitive surge peak power dissipation (t = 10 ms) {see fig. 9) P 80 Ww Puissance de surcharge crte accidentelle (t = 10 ms} (voir fig, 9) RSM Operating temperature _ Temprature de fonctionnement Toper 65+ + 175 c Storage temperature Temprature de stockage Tstg 65-+ 175 c Maximum junction temperature T 175 Temprature maximale de fonction j Maximum lead temperature for soldering during 3s at 5 mm from case Th 260 oc \_ Temprature de des 3885mm du boitier ") Junction-ambient thermal resistance Rehg- oO | Rsistance thermique jonction-ambiante max thij-a) 50 cw) 50, rue Jean-Pierre Timbaud - B.P.5 . F - 92403 Caurbevoie Cedex FRANCE I Tl. : (1) 788-50-01 Telex : 610560 F 87 December 1983 - 1/4 \ THOMSON @ COMPOSANTSS G S-THOMSON 4 S597C D B es29232 o00e44s O i _ ees i { BZV16C3V3 BZV 16 C200 - - oo | - 59c 02445. OTN IS a... BLECTRICAL CHARACTERISTICS Tamb = 25C d= 10mm PY _ CARACTERISTIQUES ELECTRIQUES Br ow aes tae Variizr* rzvilzy*| ize* | rzu/l2K vz [tava] Yr | !zm Types min nom max max max typ max we * @) (mA) a) (ma) | (1047C) | GAD (v) FF (mA) BzV 16 C 3V3 31 33 06(3.6 10 150 400 1 -6 100 1 860 BZV16 C 3V6 34 36 3.8 10, 140 400 1 - 55 100 1 790 Bzv16 C 3V9 3.7 #39 4,1 9 123 400 #1 -5 50 1 730 BZV16 C 4V3 40 43 46 9 116 400 1 -4 10 1 650 Bzvi C 4Vv7 44 47 50 8 106 600 1 -2 10 1 600 82V 16 C 5V1 48 5,1 5.4 7 98 560 1 1 10 1 550 8ZV16 C 5VE 5.2 56 6,0 5 89 600 1 25 10 2 500 BZV16 6V2 58 62 6,6 2 81 700 1 32 10 3 450 BZV 16 C 6VB 64 68 7,2 3.5 74 -700 1 4 150 5.2] 420 BZV16 C 7V5 70 #75 7,9 4 68 700 (0,5 45 100 6.7] 380 BzV16 C 8v2 77 82 8,7 45 62 700 (05 48 50 6,2] 350 i Bzv16 C 9VI 85 91 36 5 56 700 0,5 5,1 25 69] 310 Bzv16 C 10 9,4 10 10,6 7 50 700 0,25 55 25 7,6} 280 BzV16 C 11 104 $11 11,6 8 46 700 = 0,25 6 5 8,4] 260 BzvV 16 C 12 WA 12 12,7 9 42 700 = (0,25 65 9,1f 240 BzV16 C 13 12,4 13 14,1 10 38 700 = 0,25 65 5 9,9) 210 8ZV16 C 15 13,8 15 15,6 14 34 700 = (0,25 7 Ww 130 BZV16 C 16 15,3 16 7,1 16 31 700 (0,25 7 12 175 BzV 16 C 18 168 18 19,1 20 28 750 390,25 75 5 14 165 BzV 16 C 20 18,8 20 21,2 22 25 750 = 0,25 75 5 15 140 BZV 16 C 22 20,8 22 23,3 23 23 750 0,25 8 5 7 130 B2V16 C 24 22,8 24 25.6 25 21 750 = 0,25 8 5 18 115 B2V 16 C 27 25,1 27 28,9 35 19 750 = (0,25 85 5 21 100 BZ2V16 C 30 28 30. 32 40 7 1000 (0,25 85 5 23 95 BZV 16 C 33 31 33 36 45 15 1000 =-0,25 85 5 25 85 ' BZV 16 C 36 340 3688 50 14 1000 0,25 85 5 27 80 } BZV16 C 39 37 39s 41 60 13 1000 0,25 9 5 30 70 t BZV16 C 43 40 43 46 70 12 1500 0,25 9 5 33 65 BZV16 C 47 44 47 50 80 W 1600 0,25 8 5 36 60 ' BzV16 C 51 48 51 54 95 10 1800 0,25 9 5 39 55 | BZ2V 16 C 56 52 56 60 110 9 2000 0,25 9 5 43 50 j B2V16 C 62 58 62 66 125 8 2000 = 0,25 9 5 47 45 BZV 16 C 68 64 68 72 150 7 2000 = 0,25 9 5 52 42 BZV 16 C 75 70 75 79 176 65] 2000 0,25 9 5 56 38 BZV 16 C 82 7 82 8&7 200 6 3000 = 0,25 9 5 62 35 BZV16 C 91 85 91 96 250 5,5 | 3000 0,25 9 5 69 31 BzV16 C 100 84 100 106 360 5 3000 0,25 9 5 76 28 82V16 C 110 104 110)=- 116 450 45] 4000 0,25 95 5 84 25 i BZV16 C 120 114 120 = 127 550 4 4500 90,25 9,5 91 23 ' i BZV16 C 130 124 1300141 700 3,8 | 5000 0,25 9,5 5 99 21 62V16 C 150 138 150 156 1000 3.4} 6000 0,25 9.5 5 114 19 BzV16 C 160 | 153 160 171 1100 3,2] 6500 0,25 95 5 122 17 82V16 C 180 | 168 180 191 1200 28] 7000 0,25 95 5 137 15 82V 16 C 200 188 200 212 1500 2,44 8000 0,25 10 5 152 14 * Pulse test . 1 Mesure en impulsion tp <60ms 5 < 2% Forward voltage drop : = = 950 Chute de tension directe 7 12V @ Ip = 200mA, Tamb = 25C CASE DESCRIPTION DESCRIPTION DU BOITIER @ 5,96 max. @ 0,88 max. - Weight 7 21,5 9,06 max. Masse 8 . - Marking : clear, ring at cathode end 25,4 min. 4,47 max, 25,4 min, Marquage en clair, anneau cot cathode DO-13 (CB-37) 2/4 i . t 88 Ga - -'s G S-THOMSON sic D B 2529237 O00e44sb 2 i : BZV 16C 3V3 BZV16C 200 So ee 596 02446 OTHE coe we ee la te amet ee EEE 4 PW) Lee Test point of Tconnexion Mounting n 1 INFINITE HEATSINK 0 20 40 60 80 100 120 140 160175 Fig, 1- Maximum allowable power dissipation versus ambient temperature for different lead length (on infinite > heatsink ; mounting n1). yas P aes (Ww) 2 ii _ Welding Clips DEZ 18516 Mounting n 2 ; PRINTED CIRCUIT } 1 | : 7 [ Tamb (C) , v 0 50 100 160 175 Fig. 2 - Maximum mean allowable power dissipation } . versus ambient temperature {d = 10 mm} (on printed Welding circuit : mounting n3, ventilated 1 m/s}. t : Mounting n 3 ; PRINTED CIRCUIT Rth PCW) 2th (% Reh) 100 50 0 0 5. 9 13 17 21 25 10-2 40-1 1 10 102 Fig. 3 - Thermal resistance junction-ambient versus ead Fig. 4 - Transient thermal impedance Zth versus pulse length (typical values). duration for mounting n 1 with d = 10 mm (typicat Curves : 1 - Mounting n 3 : printed circuit values). 2 - Mounting n 2 : printed circuit with clips DEZ 18516 3 - Mounting n 3 : ventilated 1 m/s 4 - Mounting n 1 : infinite heatsink 3/4 a9S G S-THOMSON SAC of 7929237 O00e44? 4 i a BZV 16 C 3V3 B...-..~.-- ; Vz (10-4/C) ~ oerzNM Wh TD 4 6 6 7 8 9 10 Fig. 5a - 5b - Temperature Vz = 2 V2t ATj AVz (V} 102 10 0-1 1 10 Fig. 6 -Regulation voltage variation for Iz variation between 10 % and 35 % of Izy measure {Tamb = 25C - mounting n 1 with d = 10mm). IF IA) 10-1 06 07 08 09 1 Fig. 8-Peak forward cur- rent [ERY versus peak forward voltage drop Vey (typical values) at Tamb = 25C (mounting n Twithd = 10mm). 4/4 9.02447 DO TEMS. Vz (10-4/C) . = ob Fo wef Oo (Vv) 13 20 40 11 12 14 AVZT versus V2T {typical values-mounting n 1 with d = 10mm). IR WA) 10 eA 10-1 10-2 402 103 1 10 102 103 Fig. 7 - Reverse current IR versus regulation voltage V2T (typical values) measure at VR specified and Tamb = 25C. {typical values} D.C P (Ww) 104 RSM 103 402 10 10-1 10-2 10 Fig. 9-Non repetitive surge peak reverse power dissipation Pasn versus pulse duration (rectangular impulsion and Tamb = 25C - mounting n 1 with d = 10mm).