© Semiconductor Components Industries, LLC, 1994
January, 2017 − Rev. 17 1Publication Order Number:
BC846ALT1/D
BC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
•Moisture Sensitivity Level: 1
•ESD Rating − Human Body Model: > 4000 V
ESD Rating − Machine Model: > 400 V
•S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage BC846
BC847, BC850
BC848, BC849
VCEO 65
45
30
Vdc
Collector−Base Voltage BC846
BC847, BC850
BC848, BC849
VCBO 80
50
30
Vdc
Emitter−Base Voltage BC846
BC847, BC850
BC848, BC849
VEBO 6.0
6.0
5.0
Vdc
Collector Current − Continuous IC100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 1) RqJA 556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2) RqJA 417 °C/W
Junction and Storage
Temperature Range TJ, Tstg −55 to
+150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
12
3
COLLECTOR
3
1
BASE
2
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
ORDERING INFORMATION
1
XX M G
G
XX = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
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BC846ALT1G Series
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage BC846A, B
(IC = 10 mA) BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C
V(BR)CEO 65
45
30
−
−
−
−
−
−
V
Collector−Emitter Breakdown Voltage BC846A, B
(IC = 10 mA, VEB = 0) BC847A, B, C BC850B, C
BC848A, B, C, BC849B, C
V(BR)CES 80
50
30
−
−
−
−
−
−
V
Collector−Base Breakdown Voltage BC846A, B
(IC = 10 mA) BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C
V(BR)CBO 80
50
30
−
−
−
−
−
−
V
Emitter−Base Breakdown Voltage BC846A, B
(IE = 1.0 mA) BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C
V(BR)EBO 6.0
6.0
5.0
−
−
−
−
−
−
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C) ICBO −
−−
−15
5.0 nA
mA
ON CHARACTERISTICS
DC Current Gain BC846A, BC847A, BC848A
(IC = 10 mA, VCE = 5.0 V) BC846B, BC847B, BC848B
BC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A
BC846B, BC847B, BC848B,
BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
hFE −
−
−
110
200
420
90
150
270
180
290
520
−
−
−
220
450
800
−
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) −
−−
−0.25
0.6 V
Base−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) −
−0.7
0.9 −
−V
Base−Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base−Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580
−660
−700
770 mV
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT100 − − MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 kW, BC846A,B, BC847A,B,C, BC848A,B,C
f = 1.0 kHz, BW = 200 Hz) BC849B,C, BC850B,C
NF −
−−
−10
4.0
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BC846ALT1G Series
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3
BC846A, BC847A, BC848A, SBC846A
Figure 1. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
hFE, DC CURRENT GAIN
1
VCE = 1 V
150°C
−55°C
25°C
Figure 2. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
hFE, DC CURRENT GAIN
1
VCE = 5 V
150°C
−55°C
25°C
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0
0.02
0.18
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current Figure 5. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
IC/IB = 20 150°C
−55°C
25°C
0.4
0.9 IC/IB = 20
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
0.04
0.06
0.08
0.10
0.12
0.14
0.16
BC846ALT1G Series
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4
BC846A, BC847A, BC848A, SBC846A
Figure 6. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 7. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0 10 100
-55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 8. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 9. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
BC846ALT1G Series
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5
BC846B, SBC846B
Figure 10. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
600
hFE, DC CURRENT GAIN
1
VCE = 1 V
150°C
−55°C
25°C
500
Figure 11. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
600
hFE, DC CURRENT GAIN
1
VCE = 5 V
150°C
−55°C
25°C
500
Figure 12. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0
0.15
0.30
Figure 13. Base Emitter Saturation Voltage vs.
Collector Current Figure 14. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
IC/IB = 20 150°C
−55°C
25°C
0.4
0.9
IC/IB = 20
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
0.25
0.20
0.05
0.10
BC846ALT1G Series
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6
BC846B, SBC846B
Figure 15. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 16. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
1.0
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 2.0 10 200
1.0
TA = 25°C
200 mA
50 mA
IC =
10 mA
0.05 0.2 0.5 2.0 5.0
100 mA
20 mA
1.4
1.8
2.2
2.6
3.0
0.5 5.0 20 50 100
-55°C to 125°C
qVB for VBE
Figure 17. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 18. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.1 0.2 1.0 50
2.0 2.0 10 100
100
200
500
50
20
20
10
6.0
4.0
1.0 10 50 100
5.0
VCE = 5 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
T
0.5 5.0 20
TA = 25°C
Cob
Cib
BC846ALT1G Series
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7
BC847B, BC848B, BC849B, BC850B, SBC847B, SBC848B
Figure 19. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
600
hFE, DC CURRENT GAIN
1
VCE = 1 V
150°C
−55°C
25°C
300
400
500
Figure 20. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
600
hFE, DC CURRENT GAIN
1
VCE = 5 V
150°C
−55°C
25°C
300
400
500
Figure 21. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0
0.05
0.30
Figure 22. Base Emitter Saturation Voltage vs.
Collector Current Figure 23. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
IC/IB = 20
150°C
−55°C
25°C
0.4
0.9
IC/IB = 20
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
0.10
0.15
0.20
0.25
1.0
BC846ALT1G Series
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8
BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B
Figure 24. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 25. Base−Emitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0 10 100
-55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 26. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 27. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
BC846ALT1G Series
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9
BC847C, BC848C, BC849C, BC850C, SBC847C
Figure 28. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
1000
hFE, DC CURRENT GAIN
1
VCE = 1 V
150°C
−55°C
25°C
300
400
500
600
700
800
900
Figure 29. DC Current Gain vs. Collector
Current
IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
1000
hFE, DC CURRENT GAIN
1
VCE = 5 V
150°C
−55°C
25°C
300
400
500
600
700
800
900
Figure 30. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0
0.05
0.30
Figure 31. Base Emitter Saturation Voltage vs.
Collector Current Figure 32. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
IC/IB = 20
150°C
−55°C
25°C
0.4
0.9
IC/IB = 20
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
0.10
0.15
0.20
0.25
1.0
BC846ALT1G Series
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BC847C, BC848C, BC849C, BC850C, SBC847C
Figure 33. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 34. Base−Emitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0 10 100
-55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 35. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 36. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
BC846ALT1G Series
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11
1 mS
Thermal Limit
1 S
Figure 37. Safe Operating Area for
BC846A, BC846B Figure 38. Safe Operating Area for
BC847A, BC847B, BC847C, BC850B, BC850C
VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V)
100101
0.001
0.01
0.1
1
1001010.1
0.001
0.01
0.1
1
Figure 39. Safe Operating Area for
BC848A, BC848B, BC848C, BC849B, BC849C
VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
100 mS 10 mS 1 mS
Thermal Limit
1 S
100 mS 10 mS
1 mS
Thermal Limit
1 S
100 mS 10 mS
BC846ALT1G Series
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12
ORDERING INFORMATION
Device Marking Package Shipping†
BC846ALT1G
1A
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SBC846ALT1G*
BC846ALT3G 10,000 / Tape & Reel
BC846BLT1G
1B
3,000 / Tape & Reel
SBC846BLT1G*
BC846BLT3G 10,000 / Tape & Reel
SBC846BLT3G*
BC847ALT1G 1E 3,000 / Tape & Reel
BC847ALT3G 10,000 / Tape & Reel
BC847BLT1G
1F
3,000 / Tape & Reel
SBC847BLT1G*
BC847BLT3G 10,000 / Tape & Reel
NSVBC847BLT3G*
BC847CLT1G
1G 3,000 / Tape & Reel
SBC847CLT1G*
BC847CLT3G 10,000 / Tape & Reel
BC848ALT1G 1J 3,000 / Tape & Reel
BC848BLT1G
1K 3,000 / Tape & Reel
SBC848BLT1G*
BC848BLT3G 10,000 / Tape & Reel
BC848CLT1G
1L 3,000 / Tape & Reel
NSVBC848CLT1G*
BC848CLT3G 10,000 / Tape & Reel
BC849BLT1G
2B 3,000 / Tape & Reel
NSVBC849BLT1G*
BC849BLT3G 10,000 / Tape & Reel
BC849CLT1G 2C 3,000 / Tape & Reel
BC849CLT3G 10,000 / Tape & Reel
BC850BLT1G 2F
3,000 / Tape & Reel
NSVBC850BLT1G*
BC850CLT1G 2G
NSVBC850CLT1G*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-
cifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.
BC846ALT1G Series
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PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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