www.irf.com
1
IRFD110PbF
PD-
95927
10/27/04
Lead-Free
IRFD1
10PbF
2
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IRFD1
10PbF
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3
IRFD1
10PbF
4
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IRFD1
10PbF
www.irf.com
5
IRFD1
10PbF
6
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IRFD1
10PbF
www.irf.com
7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T
. I
SD
Waveform
D.U.T
. V
DS
Waveform
Inductor Curent
D =
P.
W
.
Period
+
-
+
+
+
-
-
-
•
dv/dt controlled by R
G
•
I
SD
controlled by Duty Factor "D"
•
D.U.T.
- Device
Under
Test
Circuit
Layout
Considerations
•
Low
Stray Inductance
•
Ground Plane
•
Low
Leakage Inductance
Current
Transformer
*
Reverse Polarity for
P-Channel
** Use P-Channel Driver for P-Channel Measurements
Peak Diode Recovery
dv/dt Test Circuit
***
V
GS
=
5.0V
for
Logic
Level
and
3V
Drive
Devices
Fig
-14
For
N
Channel
HEXFETS
IRFD1
10PbF
8
www.irf.com
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
10/04
Hexdip
Package
Outline
Dimensions are shown in millimeters (inches)
Hexdip
Part
Marking
Information
T
H
IS
IS
A
N
IR
F
D1
2
0
PA
RT
N
U
M
B
E
R
DA
T
E
C
O
DE
WW =
WE
E
K
Y =
YE
A
R
A
S
S
E
M
BLY
LO
T
C
O
D
E
R
E
C
T
IF
IE
R
INT
E
R
N
A
T
IO
NA
L
LO
G
O
I
R
F
D120
XXXX
(
P
Y
WWA)
A
=
A
SSE
M
B
L
Y
SI
TE
C
O
D
E
P =
L
E
A
D
-
F
R
E
E
(
o
p
t
io
n
a
l)
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