VS-209CNQ...PbF Series
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Revision: 09-May-17 1Document Number: 94156
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High Performance Schottky Rectifier, 200 A
FEATURES
• 175 °C TJ operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
The VS-209CNQ center tap Schottky rectifier module series
has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in high current switching power supplies,
plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
PRIMARY CHARACTERISTICS
IF(AV) 200 A
VR135 V, 150 V
Package TO-244
Circuit configuration Two diodes common cathode
Base common
cathode
Lug
terminal
anode 1
Lug
terminal
anode 2
TO-244
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 200 A
VRRM Range 135/150 V
IFSM tp = 5 μs sine 10 000 A
VF100 Apk, TJ = 125 °C (per leg) 0.71 V
TJRange -55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-209CNQ135PbF VS-209CNQ150PbF UNITS
Maximum DC reverse voltage VR135 150 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
per leg
IF(AV) 50 % duty cycle at TC = 131 °C, rectangular
waveform
100
A
per device 200
Maximum peak one cycle non-repetitive surge
current per leg
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated
load condition and
with rated VRRM
applied
10 000
10 ms sine or 6 ms rect. pulse 1200
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 5.5 A, L = 1 mH 15 mJ
Repetitive avalanche current per leg IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR
typical
1A
VS-209CNQ...PbF Series
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Revision: 09-May-17 2Document Number: 94156
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1 VFM (1)
100 A TJ = 25 °C 1.06
V
200 A 1.33
100 A TJ = 125 °C 0.74
200 A 0.88
Maximum reverse leakage current per leg
See fig. 2 IRM (1)
TJ = 25 °C
VR = Rated VR
3
mA
TJ = 125 °C 45
Maximum junction capacitance per leg CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 3000 pF
Typical series inductance per leg LSFrom top of terminal hole to mounting plane 7.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range TJ, TStg -55 - 175 °C
Thermal resistance, junction to case per leg RthJC
- - 0.38
°C/Wper module - - 0.19
Thermal resistance, case to heatsink RthCS -0.10-
Weight -68 -g
2.4 oz.
Mounting torque 35.4 (4) - 53.1 (6)
lbf in
(N m)
Mounting torque center hole 30 (3.4) - 40 (4.6)
Terminal torque 30 (3.4) - 44.2 (5)
Vertical pull - - 80 lbf in
2" lever pull - - 35
1
10
100
IF - Instantaneous Forward
Current (A)
VFM - Forward Voltage Drop (V)
0 1.0 2.0
1000
0.5 1.5
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
0 30 150
0.01
0.1
1
10
100
120
1000
60 90
0.001
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
VS-209CNQ...PbF Series
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Revision: 09-May-17 3Document Number: 94156
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0 60 90 120
1000
30
10 000
TJ = 25 °C
100
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
0.00001 0.0001 0.001 0.01 0.1 1 10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
0 16060
60
80
120
200
20 100 120
160
40 14080
180
140
100
DC
See note (1)
Square wave (D = 0.50)
80 % rated VR applied
0
120
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
060 150
30 90
60
120
100
80
40
20
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
VS-209CNQ...PbF Series
www.vishay.com Vishay Semiconductors
Revision: 09-May-17 4Document Number: 94156
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95021
I
FSM
- Non-Repetitive Surge Current (A)
t
p
- Square Wave Pulse Duration (µs)
1000
10 000
10 100 1000 10 000
At any rated load condition
and with rated V applied
following surge RRM
100
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
- Average current rating (x 10)
- Product silicon identification
- C = circuit configuration
- N = not isolated
- Q = Schottky rectifier diode
- Voltage ratings
- Lead (Pb)-free
135 = 135 V
150 = 150 V
Device code
20 9 C N Q 150 PbF
1- Vishay Semiconductors product
2
3
4
5
6
7
8
51 32 4 6 7 8
VS-
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 24-Apr-15 1Document Number: 95021
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-244
DIMENSIONS in millimeters (inches)
3
2
3
1
Ø 5.2 (Ø 0.20)
9.6 (0.37) MIN.
93 (3.66) MAX.
¼" - 20 UNC
80 (3.15)
40 (1.57)
13 (0.51)
35 (1.37) REF.
7 (0.27)
6 (0.23)
17.5 (0.69)
16.5 (0.65)
21 (0.82)
20 (0.78)
Ø 7.2 (Ø 0.28)
(2 places)
12.6 (0.5)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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