MBR3035PT - Fairchild Semiconductor

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MBR3035PT - MBR3060PT — 30 A Schottky Barrier Rectif iers

MBR3035PT - MBR3060PT Rev. 1.8

May 2015

MBR3035PT - MBR3060PT

30 A Schottky Barrier Rectifiers

Features

• Low Power Loss, High Efficiency

• High Surge Capacity

• Metal Silicon Junction, Majority Carrier Conduction

• High Current Capacity, Low Forward Voltage Drop

• Guard Ring for Over-V oltage Protection (OVP)

Applications

• Low-Voltage

• High-Frequency Inverters

• Free Wheeling

• Polarity Prot e cti on

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Part Number Marking Package Packing Method

MBR3035PT MBR3035PT

TO-247 3L Rail

MBR3045PT MBR3045PT

MBR3050PT MBR3050PT

MBR3060PT MBR3060PT

Symbol Parameter Value Unit

MBR

3035PT MBR

3045PT MBR

3050PT MBR

3060PT

VRRM Maximum Repetitive Reverse Voltage 35 45 50 60 V

IF(AV) Average Rectified Forward Current

.375-inch Lead Length 30 A

IFSM Non-Repetitive Peak Forward Surge

Current: 8.3 ms Single Half-Sine Wave 200 A

TSTG Storage Temperature Ra nge -65 to +175 °C

TJOperating Junction Temperature Ran ge -65 to +150 °C

Description

This center-tap Schottky rectifier is optimal for secondary

rectification and free-wheeling applications for high-effi-

ciency DC-DC convertor de sign, which fe atures very low

forward voltage drop and low leakage current.

TO-3P/TO-247AD

123

PIN1

PIN3 CASE

PIN2

MBR3035PT - MBR3060PT — 30 A Schottky Barrier Rectif iers

MBR3035PT - MBR3060PT Rev. 1.8 2

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Unit

PDPower Dissipation 3.0 W

RθJC Thermal Resistance, Junction to Case 1.4 °C/W

Symbol Parameter Value Unit

MBR

3035PT MBR

3045PT MBR

3050PT MBR

3060PT

VFMaximum Forward Voltage,

per Leg

IF = 20 A, TC = 25°C0.75

IF = 20 A, TC = 125°C 0.60 0.65

IF = 30 A, TC = 25°C0.76

IF = 30 A, TC = 125°C0.72

IRMaximum Reverse Current

at Rated VRRM, per Leg TA = 25°C0.15.0

TA = 125°C 60.0 100.0

IRRM Peak Repetitive Reverse Surge Current, per Le g

2.0 μs Pulse Width, f = 1.0 kHz 1.0 0.5 A

MBR3035PT - MBR3060PT — 30 A Schottky Barrier Rectif iers

MBR3035PT - MBR3060PT Rev. 1.8 3

Typical Performance Characteristics

Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current

Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs. Reverse Voltage

Figure 5. Total Capacitance Figure 6. Thermal Impedance Characteristics

0 25 50 75 100 125 150 175

Ambient Temperature [ºC]

Average Rectified Forward Current, IF [A]

SINGLE PHASE

HALF WAVE

60HZ

RESISTIVE OR

INDUCTIVE LOAD

.375" (9.00mm) LOAD

LENGTHS

MBR3035PT-MBR3045PT

MBR3050PT-MBR3060PT

12 51020 50100

100

150

200

250

300

Number of Cycles at 60Hz

Peak Forward Surge Current, IFSM [A]

0 0.2 0.4 0.6 0.8 1 1.2

0.01

0.1

Forward Voltage, VF [V]

Forward Current, IF [A]

Pulse Width = 300μ

μμ

μS

2% Duty Cycle

T = 25 C

T = 150 C

MBR3035PT-MBR3045PT

MBR3050PT-MBR3060PT

0 20406080100120140

0.001

0.01

0.1

Percent of Rated Peak Reverse Voltage [%]

Reverse Current, IR [mA]

T = 25 C º

T = 75 C

T = 125 C

MBR3035PT-MBR3045PT

MBR3050PT-MBR3060PT

MBR3035PT-MBR3045PT

0.01 0.1 1 10 100

0.1

100

Pulse Duration [s]

Transient Thermal Impedance [ºC/W]

MBR3035PT - MBR3060PT — 30 A Schottky Barrier Rectif iers

MBR3035PT - MBR3060PT Rev. 1.8 4

Physical Dimensions

Figure 7. TO-247, MOLDED, 3 LEADS, JEDEC OPTION AD

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As used herein:

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intended for surgical implant into the body or (b) support or sustain

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accordance with instructions for use provided in the labeling, can be

reasonably expected to result in a significant injury of the user.

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system whose failure to perform can be reasonably expected to

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Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change

in any manner without notice.

Preliminary First Production

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make

changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only.

Rev. I74

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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