RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Power dissipation
PD: 200 mW (Tamb=25OC)
IO: 150 mA (Tamb=25OC)
VR: 75 V
*Collector current
*
MECHANICAL DATA
* Case: Molded plastic
SOT-323
BAV70W
Collector - base voltage
TJ,Tstg: -55OC to+150OC
*Operating and storage junction temperature range
Dimensions in inches and (millimeters)
2006-3
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
(IF= 1mA)
Forward voltage (IF= 10mA)
(IF= 50mA)
(IF= 150mA)
Diode capacitance(VR= 0V, f= 1MHz)
Reveres recovery time (IF= IR= 10mA, Irr= 0.1 x IR, RL= 100W)
CHARACTERISTICS SYMBOL UNITS
V
mV
nS
PF
mA
Reveres breakdown voltage (IR= 100mA)
Reveres voltage leakage current (VR= 75V)
V(BR)
IR
VF
CD
trr
MAX
-
-
-
2.5
715
855
1000
1250
2
4
TYP
75
-
-
-
-
-
-
-
-
-
-
-
-
-
MIN
SOT-323 PLASTIC ENCAPSULATE
SWITCHING DIODE
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
*Epoxy: UL 94V-O rate flame retardant
*Lead: MIL-STD-202E method 208C guaranteed
*Mounting position: Any
*Weight: 0.006 gram
0.087(2.20)
0.008(0.20)
0.016(0.40)
0.003(0.08)
0.006(0.15)
0.079(2.00)
0.055(1.40)
0.047(1.20)
0.096(2.45)
0.085(2.15)
REF 0.021(0.53)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.053(1.35)
0.045(1.15)
RECTRON
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
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ron Inc and its subsidiaries harmless against all claims, damages and expendit-
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