FQP27P06 P-Channel QFET® MOSFET
Publication Order Number:
FQP27P06/D
©2001 Semiconductor Components Industries, LLC.
October-2017,Rev.3
FQP27P06
P-Channel QFET® MOSFET
-60 V, - 27 A, 70 mΩ
Description
This P-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
• - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V,
ID = - 13.5 A
• Low Gate Charge (Typ. 33 nC)
• Low Crss (Typ. 120 pF)
• 100% Avalanche Tested
• 175C Maximum Junction Temperature Rating
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQP27P06 Unit
VDSS Drain-Source Voltage -60 V
IDDrain Current - Continuous (TC = 25°C) -27 A
- Continuous (TC = 100°C) -19.1 A
IDM Drain Current - Pulsed (Note 1) -108 A
VGSS Gate-Source Voltage 25 V
EAS Single Pulsed Avalanche Energy (Note 2) 560 mJ
IAR Avalanche Current (Note 1) -27 A
EAR Repetitive Avalanche Energy (Note 1) 12 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns
PDPower Dissipation (TC = 25°C) 120 W
- Derate above 25°C 0.8 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter FQP27P06 Unit
RJC Thermal Resistance, Junction-to-Case, Max. 1.25 °C/W
RCS Thermal Resistance, Case-to-Sink, Typ. 0.5 °C/W
RJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W
●
●
●
▲
▶
●
●
●
▲
▶
S
D
G
S
D
G
TO-220
FQP27P06 P-Channel QFET® MOSFET
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2
Elerical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.9mH, IAS = -27A, VDD = -25V, RG = 25 Starting TJ = 25°C
3. ISD ≤ -27A, di/dt ≤ 300A/s, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
Symbol Parameter Test Conditions Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A-60 -- -- V
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient ID = -250 A, Referenced to 25°C -- -0.06 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = -60 V, VGS = 0 V -- -- -1 A
VDS = -48 V, TC = 150°C -- -- -10 A
IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A-2.0 -- -4.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = -10 V, ID = -13.5 A -- 0.055 0.07
gFS Forward Transconductance VDS = -30 V, ID = -13.5 A -- 12.4 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 1100 1400 pF
Coss Output Capacitance -- 510 660 pF
Crss Reverse Transfer Capacitance -- 120 155 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = -30 V, ID = -13.5 A,
RG = 25
-- 18 45 ns
trTurn-On Rise Time -- 185 380 ns
td(off) Turn-Off Delay Time -- 30 70 ns
tfTurn-Off Fall Time -- 90 190 ns
QgTotal Gate Charge VDS = -48 V, ID = -27 A,
VGS = -10 V
-- 33 43 nC
Qgs Gate-Source Charge -- 6.8 -- nC
Qgd Gate-Drain Charge -- 18 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- -27 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -108 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -27 A -- -- -4.0 V
trr Reverse Recovery Time VGS = 0 V, IS = -27 A,
dIF / dt = 100 A/s
-- 105 -- ns
Qrr Reverse Recovery Charge -- 0.41 -- C
(Note 4)
(Note 4)
FQP27P06 P-Channel QFET® MOSFET
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3
0 5 10 15 20 25 30 35
0
2
4
6
8
10
12
VDS = -30V
VDS = -48V
※ Note : ID = -27 A
-VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10-1 100101
0
500
1000
1500
2000
2500
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
10-1
100
101
102
175℃※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
25℃
-IDR , Reverse Drain Current [A]
-VSD , Source-Drain Voltage [V]
0 102030405060708090100110120130
0.00
0.04
0.08
0.12
0.16
0.20
0.24
※ Note : T
J = 25℃
VGS = - 20V
VGS = - 10V
RDS(on) [],
Drain-Source On-Resistance
-ID , Drain Current [A]
246810
10-1
100
101
102
175℃
25℃
-55℃
※ Notes :
1. VDS = -30V
2. 250μs Pulse Test
-ID , Drain Current [A]
-VGS , Gate-Source Voltage [V]
10-1 100101
100
101
102
VGS
Top : - 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
-ID, Drain Current [A]
-VDS, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
FQP27P06 P-Channel QFET® MOSFET
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4
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
※ N o te s :
1. Z θJC(t) = 1.25 /W Max.℃
2. D uty F a cto r, D = t1/t2
3. T JM - TC = PDM * ZθJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Thermal Response
t1, Square W ave Pulse Duration [sec]
25 50 75 100 125 150 175
0
5
10
15
20
25
30
-ID, Drain Current [A]
TC, Case Temperature [ ]℃
100101102
10-1
100
101
102
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by R DS(on)
※ Notes :
1. TC
= 25 oC
2. TJ = 175 oC
3. Single Pulse
-ID, Drain Current [A]
-VDS, Drain-Source Voltage [V]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
※ Notes :
1. VGS = -10 V
2. ID
= -13.5 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t1
PDM
t2
FQP27P06 P-Channel QFET® MOSFET
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5
Charge
VGS
-10V
Qg
Qgs Qgd
-3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
-10V
Qg
Qgs Qgd
-3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
VDS
VGS 10%
90%
td(on) tr
ton toff
td(off) tf
VDD
-10V
VDS
RL
DUT
RG
VGS
VDS
VGS 10%
90%
td(on) tr
ton toff
td(off) tf
VDD
-10V
VDS
RL
DUT
RG
VGS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
-10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
-10V DUT
RG
LL
ID
ID
t p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQP27P06 P-Channel QFET® MOSFET
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6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGCompliment of DUT
(N-Channel)
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGCompliment of DUT
(N-Channel)
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
FQP27P06 P-Channel QFET® MOSFET
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7
Package Dimensions
TO-220
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