PANASONIC INDL/ELEK {IC} 42E D mm 6932852 0O104e7 1 age . Silicon PNP Power 7-33-14 Transistors TO-220 Package Absolute Maximum Ratings (Ta=25C) . tem Symbol | TIP32 | TIP32A | TIP32B | TIP32C | Unit | . Applications: . ae . Collactor-Base Voltage -Veso| 40 | 60 | 80 | 100 | V : Corl etary arin Speed Switching Collector-Emitter Voltage VcEO 40 60 80 100 Vv. TIP31, TIPStA, TIP31B, TIPS1C Emitter-Base Voltage VeBo Vv Collector Current ~c 3 A Features: . * 40W at 25C case temperature Peak Collector Current lcm 5 A ~ 8A rated collector current Power Dissipation (Tc= 25C) Pc 40 Ww * Min. fr of 3MHz at 10V, 500mA Junction Temperature Ti 65~ +150 C : Storage Temperature Tstg -65~+150 C . : wt Electrical Characteristics (Ta= 25C) TIP32. TIP32A | TIP32B | TIP32C tem Symbol Condition min. max.|min. max.| min. max.{min. max.| Unit Collector-Emitter Voltage ~VcEo le=30mA, la=0 40 60 80 100 Vv. ~Vce=30V, {B=0 0.3 03 Collector Cutoff Current lceo ~Vce=60V, IB=0 0.3 0.3 mA Vce= 40V, VeeE=0 0.2 Vce=60V, VeeE=0 02 Collector Cutoff Current {ces VcE=80V, VBE=0 0.2 mA Vce= 100V, VBE=0 02 -VcE=4V, ~Ic=1A 25 25 25 25 DC Current Gain hre VcE=A4V, -lc=3A 10 50}10 50]10 50], 10 SO Base-Emitter Voltage VeE VceE=4V, lc=3A 1.8 18 1.8 18 Vv Collector-Emitter Saturation Voltage | Vce(sat)| lc=3A, ~le=375mA 1.2 12 1.2 12 Vv -VceE=10V, Ic=0.5A, f=ikHz 20 20 20 20 Small-Signa! Current Gain hte Vce=10V, !c=0.5A, f=1MHz | 3 3 3 3 Turn-on Time ton Io=1A, !81=100mA, Ip2=100mA 0.5 (typ.) BS Turn-off Time toff Veeen=43V, RiL=300 3 (typ.) ps The device specifications are subject to change without prior notice. 2 Unit:inch 2 0,189 of 1 ; o.02 Q.106max, 3 0.028rax: 1: Base 2: Collector 3: Emitter hs ar leeds THE COLLECTOR IS IN _ ELECTRICAL CONTACT WITH THE MOUNTING TAB 10PANASONIC INDL/ELEK {IC} Typical Characteristics Pe vs. Ta characteristics (1) Whur heat sink (2) Wh 2 1002 100220mm Al feet sink. frvs.le charactenstics = - 005 ti Veeteay VS. t characteristics Cob vs. Vca characteristics PoP oor GT bof peeasel t j hega=10t I [ t ' a 2. - Collector Current Ic(A) ont Collector-Emitter Voltage Vce(V) a 4 6 Vee(sat(V) Vee vs. fc characteristics hee vs le characteristics a] j t I DC Current Gain hre 11