© Semiconductor Components Industries, LLC, 2001
February, 2020 − Rev. 2
1Publication Order Number:
RHRG30120/D
Hyperfast Diode
30 A, 1200 V
RHRG30120
Description
The RHRG30120 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast diodes and is
silicon nitride passivated ionimplanted epitaxial planar construction.
These devices are intended to be used as freewheeling/clamping
diodes and diodes in a variety of switching power supplies and other
power switching applications. Their low stored charge and hyperfast
soft recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transistors.
Features
•Hyperfast Recovery trr = 85 ns (@ IF = 30 A)
•Max Forward Voltage, VF = 3.2 V (@ TC = 25°C)
•1200 V Reverse Voltage and High Reliability
•Avalanche Energy Rated
•This Device is Pb−Free and is RoHS Compliant
Applications
•Switching Power Supplies
•Power Switching Circuits
•General Purpose
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 1200 V
Working Peak Reverse Voltage VRWM 1200 V
DC Blocking Voltage VR1200 V
Average Rectified Forward Current
(TC = 80°C)
IF(AV) 30 A
Repetitive Peak Surge Current
(Square Wave, 20 kHz)
IFRM 60 A
Nonrepetitive Peak Surge Current
(Halfwave, 1 Phase, 60 Hz)
IFSM 300 A
Maximum Power Dissipation PD125 W
Avalanche Energy
(See Figures 7 and 8)
EAVL 30 mJ
Operating and Storage Temperature TSTG, TJ−65 to 175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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TO−247
2 LEAD
CASE 340CL
MARKING DIAGRAM
$Y&Z&3&K
RHRG30120
K
A
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
ANODE
CATHODE
CATHODE
(BOTTOM
SIDE METAL)
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
RHRG30120 = Specific Device Code
RHRG30120
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2
PACKAGE MARKING AND ORDERING INFORMATION
Device Device Marking Package Shipping
RHRG30120 RHRG30120 TO−247−2L 450/Tube
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit
VFInstantaneous Forward Voltage
(Pulse Width = 300 ms, Duty Cycle = 2%)
IF = 30 A 3.2 V
IF = 30 A,
TC = 150°C
2.6 V
IRInstantaneous Reverse Current VR = 1200 V 250 mA
VR = 1200 V
TC = 150°C
1 mA
trr Reverse Recovery Time (See Figure 6)
Summation of ta + tb
IF = 1 A,
diF/dt = 100 A/ms
65 ns
IF = 30 A,
diF/dt = 100 A/ms
85 ns
taTime to Reach Peak Reverse Current (See Figure 6) IF = 30 A,
diF/dt = 100 A/ms
48 ns
tbTime from Peak IRM to Projected Zero Crossing of IRM
Based on a Straight Line from Peak IRM Through 25%
of IRM (See Figure 6)
IF = 30 A,
diF/dt = 100 A/ms
22 ns
RqJC Thermal Resistance Junction to Case 1.2 °C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
RHRG30120
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3
TYPICAL PERFORMANCE CURVES
Figure 1. Forward Current vs. Forward Voltage Figure 2. Reverse Current vs. Reverse Voltage
Figure 3. Trr, ta and tb Curves vs. Forward Current Figure 4. Current Derating Curve
200
100
10
1
00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
175oC100oC
25oC
500
100
10
1.0
0.1
0.01
0.001
0 200 400 600 800 1000 1200
175
oC
100
oC
25oC
IR, Reverse Current (mA)
VR, Reverse Voltage (V)
IF
, Forward Current (A)
VF
, Forward Voltage (V)
IF(AV), Average Forward Current (A)
TC, Case Temperature (5C)
t, Time (ns)
VF
, Forward Current (A)
100
75
50
25
0110
30
Trr
ta
tb
40
30
20
10
0
25 50 75 100 125 150 175
SQ.WAVE
DC
RHRG30120
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4
TEST CIRCUITS AND WAVEFORMS
Figure 5. Trr Test Circuit Figure 6. Trr Waveforms and Definitions
Figure 7. Avalanche Energy Test Circuit Figure 8. Avalanche Current and Voltage Waveforms
IMAX = 1.225 A
L = 40 mH
R < 0.1 W
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL)−VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
IRM
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
GE
t1
t2
+
−
dt
dIF
IF
Trr
tatb
0
0.25IRM
DUT
CURRENT
SENSE
+
LR
VDD
−
VDD
Q1IV
t0t1t2
IL
VAVL
t
IL
VGE AMPLITUDE AND
RG CONTROL dlF/dt
t1 AND t2 CONTROL IF
V
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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