1
Semiconductor
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS |Copyright © Harris Corporation 1998
RFM12N08, RFM12N10, RFP12N08, RFP12N10
12A, 80V and 100V, 0.200 Ohm, N-Channel
Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09594.
Features
• 12A, 80V and 100V
•r
DS(ON) = 0.200Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-204AA JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
RFM12N08 TO-204AA RFM12N08
RFM12N10 TO-204AA RFM12N10
RFP12N08 TO-220AB RFP12N08
RFP12N10 TO-220AB RFP12N10
NOTE: When ordering, use the entire part number.
D
G
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
October 1998 File Number 1386.2
[ /Title
(RFM12
N08,
RFM12
N10,
RFP12
N08,
RFP12
N10)
/
Sub-
j
ect
(12A,
80Vand
100V,
0.2
Ohm,
N-Chan-
nel
Power
MOS-
FETs)
/
Author
()
/
Key-
words
(Harris
Semi-
conduc-
tor, N-
Chan-
nel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/
Cre-
Data Sheet
2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFM12N08 RFM12N10 RFP12N08 RFP12N10 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . VDSS 80 100 80 100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . VDGR 80 100 80 100 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 12
30 12
30 12
30 12
30 A
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
0.6 75
0.6 60
0.48 60
0.48 W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . Tpkg 300
260 300
260 300
260 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 80 - - V
RFM12N08, RFP12N08
RFM12N10, EFP12N10 100 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 8) 2 - 4 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 1 µA
VDS = 0.8 x Rated BVDSS, TC= 125oC- - 25 µA
Gate to Source Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 12A, VGS = 10V (Figures 6, 7) - - 0.200 Ω
Drain to Source On Voltage (Note 2) VDS(ON) ID = 12A, VGS = 10V - - 2.4 V
Turn-On Delay Time td(ON) VDD = 50V, ID = 6A, RG = 50Ω,
VGS = 10V, RL = 8Ω,
(Figures 10, 11, 12)
-4570ns
Rise Time tr- 250 375 ns
Turn-Off Delay Time td(OFF) - 85 130 ns
Fall Time tf- 100 150 ns
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz
(Figure 9) - - 850 pF
Output Capacitance COSS - - 300 pF
Reverse Transfer Capacitance CRSS - - 150 pF
Thermal Resistance Junction to Case RθJC RFM12N08, RFM12N10 - - 1.67 oC/W
RFP12N08, RFP12N10 - - 2.083 oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Voltage (Note 2) VSD ISD = 6A - - 1.4 V
Reverse Recovery Time trr ISD = 4A, dISD/dt = 100A/µs - 150 - ns
NOTE:
2. Pulse test: Pulse width ≤300µs, duty cycle ≤2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFM12N08, RFM12N10, RFP12N08, RFP12N10
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs
DRAIN CURRENT
0 50 100 150
0
TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
14
12
10
8
6
4
2
0
RFP12N08, RFP12N10
RFM12N08, RFM12N10
TC = 25oC
1 10 100 1000
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
10
1
0
ID, DRAIN CURRENT (A)
ID (MAX)
CONTINUOUS
DC OPERATION
VDSS (MAX) 80V
RFM12N08, RFP12N08
OPERATION IN
THIS AREA MAY BE
LIMITED BY rDS(ON)
VDSS (MAX) 100V
RFM12N10, RFP12N10
024 6 810
16
12
8
4
0
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
VGS = 10V
TC = 25oC
VGS = 20V VGS = 9V
VGS = 8V
VGS = 7V
VGS = 6V
VGS = 5V
2 4 6 8 10 12
16
12
8
4
0
VGS, GATE TO SOURCE VOLTAGE (V)
IDS(ON), DRAIN TO SOURCE CURRENT (A)
VDS = 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2% TC = 125oC
TC = 25oC
TC = -40oC
TC = 125oC
TC = 25oC
TC = -40oC
04 8121620
ID, DRAIN CURRENT (A)
0.8
0
0.6
0.4
0.2
rDS(ON), DRAIN TO SOURCE
ON RESISTANCE (Ω)
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
TC = 125oC
TC = 25oC
TC = -40oC
RFM12N08, RFM12N10, RFP12N08, RFP12N10
4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
-50 0 50 100 150 200
TJ, JUNCTION TEMPERATURE (oC)
2.0
1.5
1.0
0.5
0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
ID = 12A
VGS = 10V
PULSE DURATION = 80µs
-50 0 50 100 150 200
TJ, JUNCTION TEMPERATURE (oC)
1
0.8
0.6
1.2
1.4
NORMALIZED GATE
THRESHOLD VOLTAGE
VGS = VDS
ID = 250µA
0 10203040506070
VDS, DRAIN TO SOURCE (V)
1200
1000
800
600
400
200
0
C, CAPACITANCE (pF)
CISS
COSS
CRSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS VDD = BVDSS
100
75
50
25
0
10
8
6
4
2
0
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.75 BVDSS
0.25 BVDSS
0.50 BVDSS
DRAIN SOURCE VOLTAGE
GATE
SOURCE
VOLTAGE
VDD = BVDSS
RL = 8.33Ω
IG(REF) = 0.56mA
VGS = 10V
IG(REF)
IG(ACT)
20 IG(REF)
IG(ACT)
80
t, TIME (µs)
RFM12N08, RFM12N10, RFP12N08, RFP12N10
5
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
FIGURE 13. GATE CHARGE TEST CIRCUIT FIGURE 14. GATE CHARGE WAVEFORMS
VGS
RL
RG
DUT
+
-VDD
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
0.3µF
12V
BATTERY 50kΩ
VDS
S
DUT
D
G
IG(REF)
0
(ISOLATED
VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
IG(REF)
0
RFM12N08, RFM12N10, RFP12N08, RFP12N10
