VS-2N681, VS-2N5205 Series
www.vishay.com Vishay Semiconductors
Revision: 21-Sep-17 1Document Number: 93706
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Phase Control Thyristor RMS SCRs, 25 A, 35 A
FEATURES
General purpose stud mounted
Broad forward and reverse voltage range -
through 1200 V
Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
Note
(1) JEDEC® registered value
PRIMARY CHARACTERISTICS
IT(AV) 16 A, 22 A
IT(RMS) 25 A, 35 A
VDRM/VRRM
25 V, 50 V, 100 V, 150 V, 200 V, 250 V,
300 V, 400 V, 500 V, 600 V, 700 V, 800 V,
1000 V 1200 V
VTM 2.3 V
IGT 60 mA
TJ-40 °C to +125 °C
Package TO-48 (TO-208AA)
Circuit configuration Single SCR
TO-48 (TO-208AA)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES
2N681-92
VALUES
2N5205-07 UNITS
IT(AV)
16 (1) 22 (1) A
TC-65 to +65 (1) -40 to +40 °C
IT(RMS) 25 35 A
ITSM
50 Hz 145 285 A
60 Hz 150 (1) 300 (1)
I2t50 Hz 103 410 A2s
60 Hz 94 375
IGT 40 40 mA
dV/dt - 100 (1) V/μs
dI/dt 75 to 100 100 A/μs
VDRM Range 25 to 800 600 to 1200 V
VRRM Range 25 to 800 600 to 1200 V
TJ-65 to +125 (1) -40 to +125 (1) °C
VS-2N681, VS-2N5205 Series
www.vishay.com Vishay Semiconductors
Revision: 21-Sep-17 2Document Number: 93706
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS
Note
JEDEC registered values
Notes
(1) JEDEC registered value
(2) I2t for time tx = I2t · tx
VOLTAGE RATINGS (APPLIED GATE VOLTAGE ZERO OR NEGATIVE)
TYPE NUMBER
VRRM/VDRM, MAXIMUM REPETITIVE PEAK
REVERSE AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE (tp < 5 ms)
V
TJ
VS-2N681 25 35
-65 °C to +125 °C
VS-2N682 50 75
VS-2N683 100 150
VS-2N684 150 200
VS-2N685 200 300
VS-2N686 250 350
VS-2N687 300 400
VS-2N688 400 500
VS-2N689 500 600
VS-2N690 600 720
VS-2N691 700 840
VS-2N692 800 960
VS-2N5205 800 960
-40 °C to +125 °CVS-2N5206 1000 1200
VS-2N5207 1200 1440
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES
2N681-92
VALUES
2N5205-07 UNITS
Maximum average on-state
current at case temperature IT(AV) 180° half sine wave conduction 16 (1) 22 (1) A
-65 to +65 (1) -40 to +40 (1) °C
Maximum RMS on-state current IT(RMS) 25 35 A
Maximum peak, one-cycle
non-repetitive surge current ITSM
50 Hz half cycle sine wave
or 6 ms rectangular pulse
Following any rated
load condition, and
with rated VRRM applied
following surge
145 285
A
60 Hz half cycle sine wave
or 5 ms rectangular pulse 150 (1) 300 (1)
50 Hz half cycle sine wave
or 6 ms rectangular pulse
Same conditions as
above except with
VRRM applied following
surge = 0
170 340
60 Hz half cycle sine wave
or 5 ms rectangular pulse 180 355
Maximum I2t capability for fusing
I2t
t = 10 ms Rated VRRM applied
following surge,
initial TJ = 125 °C
103 410
A2s
t = 8.3 ms 94 375
Maximum I2t capability for
individual device fusing
t = 10 ms VRRM = 0 following
surge, initial TJ = 125 °C
145 580
t = 8.3 ms 135 530
Maximum I2t capability for
individual device fusing I2t (2) t = 0.1 ms to 10 ms, initial TJ < 125 °C
VRRM applied following surge = 0 1450 5800 A2s
Maximum peak on-state voltage VTM
TJ = 25 °C, IT(AV) = 16 A (50 A peak) 2N681,
IT(AV) = 22 A (70 A peak) 2N5204 2 (1) 2.3 (1) V
Maximum holding current IHAnode supply 24 V, initial IT = 1.0 A 20 at 25 °C
(typical)
200 (1) at
-40 °C mA
VS-2N681, VS-2N5205 Series
www.vishay.com Vishay Semiconductors
Revision: 21-Sep-17 3Document Number: 93706
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) JEDEC registered value
Note
(1) JEDEC registered value
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES
2N681-92
VALUES
2N5205-07 UNITS
Maximum non-repetitive
rate of rise of turned-on
current
VDM = 25 V to 600 V
dI/dt
TC = 125 °C, VDM = Rated VDRM,
ITM = 2 x dI/dt, gate pulse = 20 V,
15 , tp = 6 μs, tr = 0.1 μs maximum
Per JEDEC standard RS-397, 5.2.2.6
100 -
A/μs
VDM = 700 V to 800 V 75 -
TC = 125 °C, VDM = 600 V, ITM = 200 A at
400 Hz maximum, gate pulse = 20 V, 15 ,
tp = 6 μs, tr = 0.1 μs maximum
Per JEDEC standard RS-397, 5.2.2.6
- 100
Typical delay time td
TC = 25 °C, VDM = Rated VDRM, ITM = 10 A
DC resistive circuit, gate pulse = 10 V,
40 source, tp = 6 μs, tr = 0.1 μs
11μs
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES
2N681-92
VALUES
2N5205-07 UNITS
Minimum critical rate of
rise of off-state voltage dV/dt
TJ = 125 °C, exponential
to 100 % rated VDRM Gate open
circuited
100
(typical) 100 (1)
V/μs
TJ = 125 °C, exponential
to 67 % rated VDRM
250
(typical) 250
Maximum reverse
leakage current
VRRM, VDRM = 400 V
IDRM,
IRRM
TJ = 125 °C
3.5 -
mA
VRRM, VDRM = 500 V 3.5 -
VRRM, VDRM = 600 V 2.5 3.3
VRRM, VDRM = 700 V 2.2 -
VRRM, VDRM = 800 V 2 2.5
VRRM, VDRM = 1000 V - 2
VRRM, VDRM = 1200 V - 1.7
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES
2N681-92
VALUES
2N5205-07 UNITS
Maximum peak gate power PGM
tp < 5 ms for 2N681 series;
tp < 500 μs for 2N5204 series 5 (1) 60 (1)
W
Maximum average gate power PG(AV) 0.5 (1) 0.5 (1)
Maximum peak positive gate current +IGM 2 (1) 2A
Maximum peak positive gate voltage +VGM 10 (1) -V
Maximum peak negative gate voltage -VGM 5 (1) 5 (1)
Maximum required DC gate
current to trigger IGT
TC = min.
rated value
Maximum required gate trigger current
is the lowest value which will trigger all
units with + 6 V anode to cathode
80 (1) 80 (1)
mA
TC = 25 °C 40 40
TC = 125 °C 18.5 20
Typical DC gate current to trigger TC = 25 °C, + 6 V anode to cathode 30 30
Maximum required DC gate
voltage to trigger VGT
TC = -65 °C
Maximum required gate trigger voltage
is the lowest value which will trigger all
units with + 6 V anode to cathode
3 (1) 3 (1)
V
TC = 25 °C 2 2
Typical DC gate voltage to trigger TC = 25 °C, + 6 V anode to cathode 1.5 1.5
Maximum DC gate voltage
not to trigger VGD TC = 125 °C
Maximum gate voltage not to trigger is
the maximum value which will not
trigger any unit with rated VDRM anode
to cathode
0.25 (1) 0.25 (1) V
VS-2N681, VS-2N5205 Series
www.vishay.com Vishay Semiconductors
Revision: 21-Sep-17 4Document Number: 93706
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) JEDEC registered value
Fig. 1 - Maximum Allowable Case Temperature
vs. Average On-State Current,
2N681 Series
Fig. 2 - Maximum On-State Voltage vs. Current,
2N681 Series
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES
2N681-92
VALUES
2N5205-07 UNITS
Operating junction and
storage temperature range TJ, TStg -65 to 125 (1) -40 to 125 (1) °C
Maximum internal thermal resistance,
junction to case RthJC DC operation 1.5 1.5 (1)
°C/W
Typical thermal resistance,
case to sink RthCS Mounting surface, smooth, flat and greased 0.35 0.35
Mounting torque
± 10 %
to nut Lubricated threads
(Non-lubricated threads)
20 (27.5) lbf · in
0.23 (0.32) kgf · cm
2.3 (3.1) N · m
to device Lubricated threads
25 lbf · in
0.29 kgf · cm
2.8 N · m
Approximate weight 14 14 g
0.49 0.5 oz.
Case style TO-48 (TO-208AA)
Average
On-State Current Over Full Cycle (A)
Maximum Allowable Case Temperature (°C)
0 2 4 6 8 10 12 14 16 18 20 22 24
0
20
40
60
80
100
120
140
160
180
+30° +60° +90° +120°
+180°
DC
Conduction Period
Ø
Sinusoidal Current Waveform
TJ = 125 °C
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
01234567
1.0
4
10
200
4
102
4
10-1
TJ = 125 °C
TJ = 25 °C
VS-2N681, VS-2N5205 Series
www.vishay.com Vishay Semiconductors
Revision: 21-Sep-17 5Document Number: 93706
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Maximum Low Level On-State Power Loss vs.
Current (Sinusoidal Current Waveform),
2N681 Series
Fig. 4 - Maximum High Level On-State Power Loss vs. Current
(Sinusoidal Current Waveform),
2N681 Series
Fig. 5 - Gate Characteristics,
2N681 Series
Fig. 5a - Area of All Possible Triggering Points vs. Temperature,
2N681 Series
Fig. 6 - Maximum Transient Thermal Impedance, Junction to Case, vs. Pulse Duration,
2N681 Series
0
0
10
20
50
60
70
30
40
4 8 12 16 20 24 28 32 36
Average Forward Power Loss
Over Full Cycle (W)
Average
On-State Current Over Full Cycle (A)
+30°
+60°
+90°
+120°
+180°
DC
Conduction Angle
Ø
T
J
= 125 °C
Sinusoidal
Current
Waveform
Controlled
Rectier
Turned
Fully On
IF -Average Forward Power Loss
Over Full Cycle (W)
Average On-State Current Over Full Cycle (A)
1.0
1.0 10 102
4
10
4
44 10
3
4
102
4
103
4
104
TJ = 125 °C
Sinusoidal Current Waveform
Controlled Rectier
Turned Fully On
Conduction Angle
Ø
+30°
+60°
+90°
+120°
+180°
DC
Instantaneous Gate Voltage (V)
Instantaneous Gate Current (A)
Maximum Allowable
Instantaneous Gate
Power Dissipation
5.0 W
Area of Certain Triggering
Area of All Possible
Triggering Points
0 0.2 0.4 0.6 0.8 1.0 1.2
0
1
2
3
4
5
6
7
8
9
10
Gate Voltage (V)
Gate Current (mA)
0
1
2
3
0 25 50 75 100 125
-65 °C
25 °C
125 °C
VGD (Max.) = 0.25 V
t - Square Wave Pulse Duration (s)
Z
thJC - Transient Thermal Impedance (°C/W)
Free Convection
Mounted on Innite Heatsink
and 4" x 4" x 1/16" Copper Fin
Forced Convection at 1000 LFM
Long Time Durations
Innite Heatsink
1.0 10 102
4
10-2
44410
3
410
4
4
10-1
10-1
10-5 10-4 10-3
44410
-2
410
-1
4
10-6
4
1.0
4
10-2
10-1
4
1.0
4
101
Short Time Durations
VS-2N681, VS-2N5205 Series
www.vishay.com Vishay Semiconductors
Revision: 21-Sep-17 6Document Number: 93706
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses,
2N681 Series
Fig. 8 - Maximum Allowable Case Temperature vs. Average
On-State Current (Sinusoidal Current Waveform),
2N5205 Series
Fig. 9 - Maximum Allowable Case Temperature vs.
Average On-State Current (Rectangular Current Waveform),
2N5205 Series
Fig. 10 - Maximum Low-Level On-State Power Loss vs.
Average On-State Current (Sinusoidal Current Waveform),
2N5205 Series
Fig. 11 - Maximum High-Level On-State Power Loss vs.
Average On-State Current (Sinusoidal Current Waveform),
2N5205 Series
Fig. 12 - Maximum Low-Level On-State Power Loss vs.
Average On-State Current (Rectangular Current Waveform),
2N5205 Series
Peak Half Sine Wave On-State Current (A)
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
0
50
100
150
02468
10 20 40 60
60 Hz
50 Hz
At Any Maximum Rated Load Condition
And With Rated VRRM Applied Following Surge
Average On-State Current Over Full Cycle (A)
Maximum Allowable Case Temperature (°C)
0
0
4 8 12 16 20 24 28 32 36 40
20
40
60
80
100
120
140
+30°
+60°
+90°
+120°
+180°
Conduction Period
Ø
Sinusoidal Current Waveform
TJ = 125 °C
DC
Average On-State Current Over Full Cycle (A)
Maximum Allowable Case Temperature (°C)
0
0
4 8 12 16 20 24 28 32 36 40
20
40
60
80
100
120
140
Conduction Period
Rectangular Current
Waveform TJ = 125 °C
Ø
+60°
+90°
+120°
+180° DC
Average Forward Power Loss
Over Full Cycle (W)
Average On-State Current Over Full Cycle (A)
0
0
5 101520 25303540 4550
10
20
30
40
50
60
70
80
90
Conduction Angle
Ø
Sinusoidal Current Waveform
TJ = 125 °C
Controlled Rectier Turned Fully On
+30°
+60°
+90°
+120°
+180°
DC
1.0
1.0 10 102
5
2
5
2
25 25 2510
3
102
102
10
5
2
5
2
104
103
IF -Average Forward Power Loss
Over Full Cycle (W)
Average On-State Current Over Full Cycle (A)
+30°
+60°
+90°
+120°
+180°
DC
+30°
+60°
+90° +120°
+180°
DC
Controlled Rectier
Turned Fully On
Conduction Angle
Ø
Sinusoidal Current
Waveform
TJ = 125 °C
Average Forward Power Loss
Over Full Cycle (W)
Average On-State Current Over Full Cycle (A)
0
0
51015202530
35 40 45 50
10
20
30
40
50
60
70
80
90
Conduction Period
Rectangular Current Waveform
TJ = 125 °C
Controlled Rectier Turned Fully On
+60°
+90°
+120°
+180°
DC
Ø
VS-2N681, VS-2N5205 Series
www.vishay.com Vishay Semiconductors
Revision: 21-Sep-17 7Document Number: 93706
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Maximum High-Level On-State Power Loss vs.
Average On-State Current (Rectangular Current Waveform),
2N5205 Series
Fig. 14 - Maximum Instantaneous On-State Voltage vs.
Instantaneous On-State Current,
2N5205 Series
Fig. 15 - Maximum Transient Thermal Resistance,
Junction to Case vs. Pulse Duration,
2N5205 Series
1.0
1.0 10 102
5
2
5
2
25 25 2510
3
102
102
10
5
2
5
2
104
103
IF -Average Forward Power Loss
Over Full Cycle (W)
Average On-State Current Over Full Cycle (A)
+60°
+90°
+120°
+180°
DC
+60°
+90° +120°
+180°
DC
Controlled Rectier
Turned Fully On TJ = 125 °C
Conduction Period
Ø
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
01234567
10
4
102
4
103
4
1.0
TJ = 125 °C
TJ = 25 °C
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95333
t - Square Wave Pulse Duration (s)
Z
thJC - Transient Thermal Impedance (°C/W)
Long Time Durations
Steady State Value = 1.5 °C/W
1.0 10 102
10-2
103104
10-1
10-1
10-5 10-4 10-3 10-2 10-1
10-6
1.0
10-2
10-1
1.0
101
Short Time Durations
5
2
5
2
5
2
5
2
5
2
5
10
2
5252525252
5
25
25
25
25
2
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2021 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED