Standard Avalanche Sinterglass Diode
1N5059, 1N5060, 1N5061,1N5062
Vishay Semiconductors
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 86000
138 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.6, 25-Aug-10
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
Glass passivated junction
Hermetically sealed axial-leaded glass
envelope
Controlled avalanche characteristics
Low reverse current
High surge current loading
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
Rectification diode, general purpose
949539
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
1N5059 VR = 200 V; IFAV = 2 A SOD-57
1N5060 VR = 400 V; IFAV = 2 A SOD-57
1N5061 VR = 600 V; IFAV = 2 A SOD-57
1N5062 VR = 800 V; IFAV = 2 A SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak
reverse voltage See electrical characteristics
1N5059 VR = VRRM 200 V
1N5060 VR = VRRM 400 V
1N5061 VR = VRRM 600 V
1N5062 VR = VRRM 800 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 50 A
Average forward current TthJA = 45 K/W, Tamb = 50 °C IFAV 2A
TthJA = 100 K/W, Tamb = 75 °C IFAV 0.8 A
Pulse energy in avalanche mode, non
repetitive (inductive load switch off) I(BR)R = 1 A, inductive load ER20 mJ
Junction and storage temperature
range Tj = Tstg - 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient Lead length l = 10 mm, TL = constant RthJA 45 K/W
On PC board with spacing 25 mm RthJA 100 K/W
1N5059, 1N5060, 1N5061,1N5062
Standard Avalanche Sinterglass
Diode Vishay Semiconductors
Document Number: 86000 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.6, 25-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 139
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 2 - Max. Reverse Current vs. Junction Temperature
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Forward Current vs. Forward Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX UNIT
Forward voltage IF = 1 A VF--1V
IF = 2.5 A VF- - 1.15 V
Reverse current
VR = VRRM IR--1μA
VR = VRRM, Tj = 100 °C IR- - 10 μA
VR = VRRM, Tj = 150 °C IR- - 100 μA
Breakdown voltage IR = 100 μA
1N5059 V(BR)R 225 - 1600 V
1N5060 V(BR)R 450 - 1600 V
1N5061 V(BR)R 650 - 1600 V
1N5062 V(BR)R 900 - 1600 V
Diode capacitance VR = 0 V, f = 1 MHz CD-40-pF
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr --4μs
0
40
80
120
160
200
25 50 75 100 125 150 175
Tj- Junction Temperature ( °C)
15764
VR=V
RRM
P - Reverse Power Dissipation ( mW )
R
160 K/W
100 K/W
45 K/W
RthJA =
1N5062
1N5061
1N5060
1N5059
0.1
1
10
100
1000
15765
VR=V
RRM
I - Reverse Current ( µA)
R
25 50 75 100 125 150 175
Tj- Junction Temperature ( °C)
15763_1
V
R =V
RRM
half sinewave
R
thJA
=4 5 K/W
l =10 mm
R
thJA
= 100 K/W
PCB :d=2 5m m
02 04 06 08 0 100 120 140 160 180
T
amb
- Ambient T emperature (°C)
0.0
1.0
1.5
2.0
2.5
3.0
I- Average Forward Current (A)
FA V
0.5
I - Forward Current ( A )
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
V
F
- Forward Voltage(V)
15762
F
T
j
=25°C
T
j
=175°C
0.01
0.1
1
10
100
0.001
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 86000
140 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.6, 25-Aug-10
1N5059, 1N5060, 1N5061,1N5062
Vishay Semiconductors Standard Avalanche Sinterglass
Diode
Fig. 5 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0
10
20
30
40
50
0.1 1 10 100
VR-ReverseVoltage(V)15766
C - Diode Capacitance ( pF )
D
f=1MHz
20543
3.6 (0.142) max.
26 (1.024) min. 4 (0.157) max. 26 (1.024) min.
0.82 (0.032) max.
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Revision: 12-Mar-12 1Document Number: 91000
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