PD - 97035D IRFB4227PbF Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability l Class-D Audio Amplifier 300W-500W (Half-bridge) Key Parameters VDS max 200 V VDS (Avalanche) typ. 240 RDS(ON) typ. @ 10V 19.7 V m: IRP max @ TC= 100C 130 A TJ max 175 C D D G G S D S TO-220AB G D S Gate Drain Source Description This HEXFET(R) Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. Absolute Maximum Ratings Max. Units VGS Gate-to-Source Voltage 30 V ID @ TC = 25C Continuous Drain Current, VGS @ 10V 65 A Parameter ID @ TC = 100C Continuous Drain Current, VGS @ 10V 46 IDM Pulsed Drain Current 260 IRP @ TC = 100C Repetitive Peak Current PD @TC = 25C Power Dissipation 330 Power Dissipation 190 Linear Derating Factor 2.2 W/C TJ Operating Junction and -40 to + 175 C TSTG Storage Temperature Range PD @TC = 100C c g 130 Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw x 300 W x 10lb in (1.1N m) N Thermal Resistance Parameter RJC RCS RJA Junction-to-Case f Case-to-Sink, Flat, Greased Surface Junction-to-Ambient f Typ. Max. Units --- 0.50 --- 0.45 --- 62 C/W Notes through are on page 8 www.irf.com 1 09/10/07 IRFB4227PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Conditions Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 200 --- --- VDSS/TJ Breakdown Voltage Temp. Coefficient --- 170 --- RDS(on) Static Drain-to-Source On-Resistance --- 19.7 24 V VGS = 0V, ID = 250A mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 46A e VDS = VGS, ID = 250A VGS(th) Gate Threshold Voltage 3.0 --- 5.0 V VGS(th)/TJ Gate Threshold Voltage Coefficient --- -13 --- mV/C IDSS Drain-to-Source Leakage Current --- --- 20 A VDS = 200V, VGS = 0V --- --- 1.0 mA VDS = 200V, VGS = 0V, TJ = 125C Gate-to-Source Forward Leakage --- --- 100 nA VGS = 20V Gate-to-Source Reverse Leakage --- --- -100 gfs Forward Transconductance 49 --- --- S Qg Total Gate Charge --- 70 98 nC VDD = 100V, ID = 46A, VGS = 10V Qgd Gate-to-Drain Charge --- 23 --- td(on) Turn-On Delay Time --- 33 --- ns VDD = 100V tr Rise Time --- 20 --- ID = 46A td(off) Turn-Off Delay Time --- 21 --- RG = 2.5 tf Fall Time --- 31 --- VGS = 10V tst Shoot Through Blocking Time 100 --- --- --- 570 --- --- 910 --- IGSS EPULSE Energy per Pulse Ciss Input Capacitance --- 4600 --- Coss Output Capacitance --- 460 --- Crss Reverse Transfer Capacitance --- 91 --- VGS = -20V ns VDS = 25V, ID = 46A e e VDD = 160V, VGS = 15V, RG= 4.7 L = 220nH, C= 0.4F, VGS = 15V J VDS = 160V, RG= 4.7, TJ = 25C L = 220nH, C= 0.4F, VGS = 15V VDS = 160V, RG= 4.7, TJ = 100C VGS = 0V pF VDS = 25V = 1.0MHz, Coss eff. Effective Output Capacitance --- 360 --- VGS = 0V, VDS = 0V to 160V LD Internal Drain Inductance --- 4.5 --- Between lead, nH LS Internal Source Inductance --- 7.5 --- D 6mm (0.25in.) G from package S and center of die contact Avalanche Characteristics Typ. Max. Units Single Pulse Avalanche Energy --- 140 mJ Repetitive Avalanche Energy --- 33 mJ 240 --- V --- 39 A Parameter EAS EAR VDS(Avalanche) IAS d c Repetitive Avalanche Voltagec Avalanche Currentd Diode Characteristics Parameter IS @ TC = 25C Continuous Source Current Min. --- Typ. Max. Units --- (Body Diode) ISM Pulsed Source Current c A --- --- 260 Conditions MOSFET symbol 65 showing the integral reverse p-n junction diode. (Body Diode) e VSD Diode Forward Voltage --- --- 1.3 V TJ = 25C, IS = 46A, VGS = 0V trr Reverse Recovery Time --- 100 150 ns TJ = 25C, IF = 46A, VDD = 50V Reverse Recovery Charge --- 430 640 nC di/dt = 100A/s Qrr 2 e www.irf.com IRFB4227PbF 1000 VGS 15V 10V 8.0V 7.0V BOTTOM 100 7.0V 10 BOTTOM 100 7.0V 10 60s PULSE WIDTH Tj = 25C 0.1 1 60s PULSE WIDTH Tj = 175C 1 10 0.1 VDS , Drain-to-Source Voltage (V) 10 Fig 2. Typical Output Characteristics 1000.0 4.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current() 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics VDS = 25V 60s PULSE WIDTH 100.0 TJ = 175C 10.0 1.0 TJ = 25C 0.1 3.0 4.0 5.0 6.0 7.0 ID = 46A VGS = 10V 3.0 2.0 1.0 0.0 8.0 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 1000 1000 L = 220nH C = 0.4F 100C 25C 800 L = 220nH C = Variable 100C 25C 800 Energy per pulse (J) 900 Energy per pulse (J) VGS 15V 10V 8.0V 7.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 700 600 500 400 300 600 400 200 200 0 100 110 120 130 140 150 160 170 VDS, Drain-to -Source Voltage (V) Fig 5. Typical EPULSE vs. Drain-to-Source Voltage www.irf.com 130 140 150 160 170 180 190 ID, Peak Drain Current (A) Fig 6. Typical EPULSE vs. Drain Current 3 IRFB4227PbF 1400 1000.0 L = 220nH ISD, Reverse Drain Current (A) Energy per pulse (J) 1200 C= 0.4F C= 0.3F C= 0.2F 1000 800 600 400 200 100.0 TJ = 175C 10.0 1.0 TJ = 25C VGS = 0V 0 25 50 75 100 125 0.1 150 0.2 Temperature (C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 20 Coss = Cds + Cgd Ciss 4000 Coss 2000 Crss 1 1.2 ID= 46A VDS = 160V VDS = 100V VDS = 40V 16 12 8 4 10 100 0 1000 20 40 60 80 100 120 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance vs.Drain-to-Source Voltage Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage 1000 70 ID, Drain-to-Source Current (A) 60 ID , Drain Current (A) 1.0 0 0 50 40 30 20 10 0 OPERATION IN THIS AREA LIMITED BY R DS(on) 1sec 100 100sec 10sec 10 1 Tc = 25C Tj = 175C Single Pulse 0.1 25 50 75 100 125 150 175 TC , CaseTemperature (C) Fig 11. Maximum Drain Current vs. Case Temperature 4 0.8 Fig 8. Typical Source-Drain Diode Forward Voltage VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 6000 0.6 VSD, Source-to-Drain Voltage (V) Fig 7. Typical EPULSE vs.Temperature 8000 0.4 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 12. Maximum Safe Operating Area www.irf.com 0.16 EAS, Single Pulse Avalanche Energy (mJ) () RDS (on), Drain-to -Source On Resistance IRFB4227PbF ID = 46A 0.12 0.08 TJ = 125C 0.04 TJ = 25C 600 I D 8.6A 14A BOTTOM 39A TOP 500 400 300 200 100 0.00 0 5 6 7 8 9 10 25 VGS, Gate-to-Source Voltage (V) 75 100 125 150 175 Starting TJ, Junction Temperature (C) Fig 13. On-Resistance Vs. Gate Voltage Fig 14. Maximum Avalanche Energy Vs. Temperature 5.0 200 ton= 1s Duty cycle = 0.25 Half Sine Wave Square Pulse 4.5 4.0 Repetitive Peak Current (A) VGS(th) Gate threshold Voltage (V) 50 ID = 250A 3.5 3.0 2.5 160 120 80 40 2.0 1.5 0 -75 -50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 Case Temperature (C) TJ , Temperature ( C ) Fig 16. Typical Repetitive peak Current vs. Case temperature Fig 15. Threshold Voltage vs. Temperature Thermal Response ( ZthJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 2 1 2 Ci= i/Ri Ci i/Ri R3 R3 3 C 3 Ri (C/W) i (sec) 0.08698 0.000074 0.2112 0.001316 0.1506 0.009395 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFB4227PbF Driver Gate Drive D.U.T - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG + V - DD IAS VGS 20V tp A 0.01 I AS Fig 19a. Unclamped Inductive Test Circuit RD VDS Fig 19b. Unclamped Inductive Waveforms VDS 90% V GS D.U.T. RG + - VDD 10% VGS 10V Pulse Width 1 s Duty Factor 0.1 % td(on) Fig 20a. Switching Time Test Circuit tr td(off) tf Fig 20b. Switching Time Waveforms Id Vds Vgs L DUT 0 VCC Vgs(th) 1K S Qgs1 Qgs2 Fig 21a. Gate Charge Test Circuit 6 Qgd Qgodr Fig 21b. Gate Charge Waveform www.irf.com IRFB4227PbF Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms Fig 21c. EPULSE Test Waveforms www.irf.com 7 IRFB4227PbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information (;$03/( 7+,6,6$1,5) /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(& 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( <($5 :((. /,1(& TO-220AB packages are not recommended for Surface Mount Application. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.18mH, RG = 25, IAS = 39A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. Half sine wave with duty cycle = 0.25, ton=1sec. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/2007 8 www.irf.com