1N5223B - Renesas Technology / Hitachi Semiconductor

Rev.3.00 Aug 22, 2005 page 1 of 5

1N5223B through 1N5258B

Silicon Epitaxial Planar Zener Diodes for Voltage Regulation

REJ03G1222-0300

(Previous : AD E- 208-1 37B)

Rev.3.00

Aug 22, 2005

Features

• Glass package DO-35 structure ensures high reliability.

• Wide spectrum from 2.7 V through 36 V of zener voltage provide flexible application.

Ordering Information

Type No.

Cathode Band

Mark

Package Name Package Code

(Previous Code)

1N5223B through

1N5258B Black Type No. DO-35 GRZZ0002ZB-A

(DO-35)

Pin Arrangement

1. Cathode

2. Anode

Cathode band

Type No.

1N5223B through 1N5258B

Rev.3.00 Aug 22, 2005 page 2 of 5

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Power dissipation Pd 500 mW

Surge power dissipation Pd (surge) *1 10 W

Lead temperature TL *2 230 °C

Junction temperature Tj *3 200 °C

Storage temperature Tstg –65 to +200 °C

Notes: 1. Non-recurrent square wave, pw = 8.3 ms, Tj = 55°C, Tj is prior to surge.

2. Less than 1/16" from the case for 10 seconds.

3. By standard printed board, see fig 2.

Electrical Characteristics

(Ta = 25°C)

Zener Voltage Reverse Current Dynamic Resistance

Test

Condition

IR (µA) Test

Condition

ZZT (Ω)Test

Condition

ZZK (Ω)Test

Condition

γZ (%/°C) *1

VF*2 (V)

Type No.

VZ (V) IZ (mA) Max VR (V) Max IZT (m A) Max IZK (mA) Max Max

1N5223B 2.7 ± 5 (%) 20 75 1.0 30 20 1300 0.25 –0. 08 1. 1

1N5224B 2.8 ± 5 (%) 20 75 1.0 30 20 1400 0.25 –0. 08 1. 1

1N5225B 3.0 ± 5 (%) 20 50 1.0 29 20 1600 0.25 –0.075 1.1

1N5226B 3.3 ± 5 (%) 20 25 1.0 28 20 1600 0.25 –0. 07 1. 1

1N5227B 3.6 ± 5 (%) 20 15 1.0 24 20 1700 0.25 –0.065 1.1

1N5228B 3.9 ± 5 (%) 20 10 1.0 23 20 1900 0.25 –0. 06 1. 1

1N5229B 4.3 ± 5 (%) 20 5 1.0 22 20 2000 0.25 ±0.055 1.1

1N5230B 4.7 ± 5 (%) 20 5 2.0 19 20 1900 0.25 ± 0. 03 1. 1

1N5231B 5.1 ± 5 (%) 20 5 2.0 17 20 1600 0.25 ± 0. 03 1. 1

1N5232B 5.6 ± 5 (%) 20 5 3.0 11 20 1600 0.25 +0.038 1.1

1N5233B 6.0 ± 5 (%) 20 5 3.5 7 20 1600 0.25 +0.038 1.1

1N5234B 6.2 ± 5 (%) 20 5 4.0 7 20 1000 0.25 +0.045 1.1

1N5235B 6.8 ± 5 (%) 20 3 5.0 5 20 750 0.25 +0.05 1.1

1N5236B 7.5 ± 5 (%) 20 3 6.0 6 20 500 0.25 +0.058 1.1

1N5237B 8.2 ± 5 (%) 20 3 6.5 8 20 500 0.25 +0.062 1.1

1N5238B 8.7 ± 5 (%) 20 3 6.5 8 20 600 0.25 +0.065 1.1

1N5239B 9.1 ± 5 (%) 20 3 7.5 10 20 600 0.25 +0.068 1.1

1N5240B 10 ± 5 (%) 20 3 8.0 17 20 600 0.25 +0.075 1.1

1N5241B 11 ± 5 (%) 20 2 8.4 22 20 600 0.25 +0.076 1.1

1N5242B 12 ± 5 (%) 20 1 9.1 30 20 600 0.25 +0.077 1.1

1N5243B 13 ± 5 (%) 9.5 0.5 9.9 13 9.5 600 0.25 +0.079 1.1

1N5244B 14 ± 5 (%) 9.0 0.1 10 15 9.0 600 0.25 +0.082 1.1

1N5245B 15 ± 5 (%) 8.5 0.1 11 16 8.5 600 0.25 +0.082 1.1

1N5246B 16 ± 5 (%) 7.8 0.1 12 17 7.8 600 0.25 +0.083 1.1

1N5247B 17 ± 5 (%) 7.4 0.1 13 19 7.4 600 0.25 +0.084 1.1

1N5248B 18 ± 5 (%) 7.0 0.1 14 21 7.0 600 0.25 +0.085 1.1

1N5249B 19 ± 5 (%) 6.6 0.1 14 23 6.6 600 0.25 +0.086 1.1

1N5250B 20 ± 5 (%) 6.2 0.1 15 25 6.2 600 0.25 +0.086 1.1

Notes: 1. 1N5223 to 1N5242: IZ = 7.5 mA, 1N5243 to 1N5258: IZ = IZ,, Ta = 25°C to 125°C

2. Tested with DC, IF = 200 mA

1N5223B through 1N5258B

Rev.3.00 Aug 22, 2005 page 3 of 5

Electrical Characteristics (cont.)

(Ta = 25°C)

Zener Voltage Reverse Current Dynamic Resistance

Test

Condition

IR (µA) Test

Condition

ZZT (Ω)Test

Condition

ZZK (Ω)Test

Condition

γZ (%/°C) *1

VF*2 (V)

Type No.

VZ (V) IZ (mA) Max VR (V) Max IZT (m A) Max IZK (mA) Max Max

1N5251B 22 ± 5 (%) 5.6 0.1 17 29 5.6 600 0.25 +0.087 1.1

1N5252B 24 ± 5 (%) 5.2 0.1 18 33 5.2 600 0.25 +0.088 1.1

1N5253B 25 ± 5 (%) 5.0 0.1 19 35 5.0 600 0.25 +0.089 1.1

1N5254B 27 ± 5 (%) 4.6 0.1 21 41 4.6 600 0.25 +0.090 1.1

1N5255B 28 ± 5 (%) 4.5 0.1 21 44 4.5 600 0.25 +0.091 1.1

1N5256B 30 ± 5 (%) 4.2 0.1 23 49 4.2 600 0.25 +0.091 1.1

1N5257B 33 ± 5 (%) 3.8 0.1 25 58 3.8 700 0.25 +0.092 1.1

1N5258B 36 ± 5 (%) 3.4 0.1 27 70 3.4 700 0.25 +0.093 1.1

Notes: 1. 1N5223 to 1N5242: IZ = 7.5 mA, 1N5243 to 1N5258: IZ = IZ,, Ta = 25°C to 125°C

2. Tested with DC, IF = 200 mA

1N5223B through 1N5258B

Rev.3.00 Aug 22, 2005 page 4 of 5

Main Characteristic

4081216

20 24 28 32 4036

1N5223B 1N5225B

1N5227B

1N5229B

1N5231B

1N5233B

1N5235B

1N5237B

1N5239B

1N5240B

1N5241B

1N5242B

1N5243B

1N5244B

1N5245B

1N5258B

1N5257B

1N5256B

1N5254B

1N5255B

1N5253B

1N5252B

1N5251B

1N5250B

1N5246B

1N5247B

1N5248B

1N5249B

500

400

300

200

100

20015010050

Power Dissipation Pd (mW)

2.5mm

3mm

Printed circuit board

100 180 1.6t mm

Material: paper phenol

××

5mm

Ambient Temperature Ta (°C)

Fig.2 Power Dissipation vs. Ambient Temperature

Zener Voltage V

(V)

Fig.1 Zener current vs. Zener voltage

Zener Current I

(mA)

1N5223B through 1N5258B

Rev.3.00 Aug 22, 2005 page 5 of 5

Package Dimensions

LEL

Min Nom Max

φb-0.5

φD-2.0

E--4.2

L26.0 - -

φbφD

Dimension in Millimeters

Reference

Symbol

SC-40 0.13g

MASS[Typ.]

DO-35 / DO-35VGRZZ0002ZB-A

RENESAS CodeJEITA Package Code Previous Code

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