TOPAZ SEMICONDUCTOR OSE Dd ee 0001021 4 i T-31-25 SD304, $D306 N-GHANNEL ENHANCEMENT-MODE DUAL GATE D-MOS FET ORDERING INFORMATION Sorted Chips in Walfle Pack | SD304CHP | SD30ECHP TO-206AF (TO-72) Package $D304DE SD308DE SEMI C ONDUC TOR Shorting Rings SDS304DE/R | SD306DE/R FEATURES APPLICATIONS Normally Off-Enhancement-Mode Operation i Wide Band (Unnoutralized) VHF/UHF Amplifiers BH Dual Gate with Gate Protective Diodes @ VHF/UHF Linear Mixers m@ Low Feedback Capacitance ~ crss .03pF (typ) l@ Wide Dynamic Range-Remote AGC capability lf High Power Gain- 17d8 min. @ S00MHz (SD306) Hf Low Nolse-6.0dB max. @ 500MHz (SD306) @ Low Cross-Modulation Distortion ABSOLUTE MAXIMUM RATINGS (Ta = +25C unless otherwise noted) Vps__ Drain-Source Voltage Pp Continuous Power Dissipation (Note 1) SD304 0... eee +25V TA = +25C (Free Ain ........ae 300mW SDB06 voce c cece eee eee eee +20V To = +25C (Infinite Heat Sink) .... 1.2W Veip Gate 1-Substrate Voltage Power Derating Factors (Note 1) SDI04 2. eee ec eee -~0.3 to +10V Free Al... ccc ecccecucceece 3.0mW/ C SD306 vo cece eee e ee eees 0.3 to +20V Infinite Heat Sink .........00- 42mW/C Vq@2B Gate 2-Substrate Voltage Top Operating Junction SD3B04 .. eee eee cece ~0.3 to +15V Temperature Range ......... 55 to +125C SD306 00... eee ee eee -0.3 to +20V Tstg Storage Temperature Range .. 65 to +175C Ip Continuous Drain Current (Note 1)...... 50mA Note 1: Not applicable to chips. Final value depends mounting substrate. SCHEMATIC DIAGRAM PACKAGE DIMENSIONS CHIP CONFIGURATION (TO-72) TO-206AF (See Package 3) Pin 1-Drain, 2-Gate 2 Pin 3-Gate 1, Chip backside connected to source Pin 4-Source, Substrate, Case Dimenstons: .022 x .022 x .013 inches 3-65 0-88-6TOPAZ SEMICONDUCTOR OSE D Bf Woasec O0010ee a a TONFAZ SEMICONDUCTOR z T-31-25 _ $D304, SD306 ELECTRICAL CHARACTERISTICS (Ta = +25C unless otherwise noted) $D204 $D308 # PARAMETER UNIT TEST CONDITIONS MIN | TYP] MAX | MIN | TYP] MAX Drain-Source Ip = SpA mu BVps Breakdown Voltage 25 | 30 20 | 25 Vv Vaeis = Va2s = 0 Drain-Source OFF Vos = 15V 2 Ipsg - Leakage Current 01] 1.0 01} 1.0 tA | Veis = Vaas = 0 _ Gate 1 Vais = 5V | 3) [Iaiss Leakage Current 1.04 100 1.0 | 100 nA | Vaes = Vos = 90 o Gate 2 Vaos = 10V 4]Elicass Leakage Current 1.0} 100 1.0 | 100 nA | Vais=Vps =9 1 Gate 1-Source Vos = Vais 5|? V44 Threshold Voltage 0.1] 107) 2.0 01) 05] 1.5 v Veas = 10V,Ip = 1pA 6 0.1] 10] 2.0 Vv Veis = 4V Gate 2-Source Vos = Vaes | |Vr2 Threshold Voltage Ip =1pA 7 0.1] 05] 1.5 v Veis = 5V Y Drain-Source Ip = imA,Veis = SV 8 Toston) ON Resistance 90 | 130 65 | 100 | ohms | Vaasg = 10V Common-Source Vps = 15V,Ip = 18MA 9 Ofs Forward Transconductance | 8.0 | 10 13 {| 15 mmhos] Vgag = 10V,f = 1KHz Common-Source Vos = 16V, Ip = 18MA | 10) Ciss Input Capacitance 251 3.0 3.3 | 3.6 Veos = 10V,f = IMHz o Common-Source 11] |coss _ Output Capacitance 40] 1.2 10] 1.3 pF | Vps = 18V,Vaig =0 Ye Common-Source Veas = 10V,f = MHz 12 | Ojerss Reverse Transfer 03 03 | Capacitance 13] [Re(v11) 144 mmbhos | Vpg = 15V,Ip = 18mA + Input Admittance 14 im(vi1) 4.76 mmbhos | Vaag = 10V,f = 200MHz 3-66TOPAZ SEMICONDUCTOR OSE D B coase2t Q001023 1 i T-31-25 a 2 TOPAZ SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (Ta = +25C unless otherwise noted) $D304, SD306 $D304 $p306 PARAMETER UNIT TEST CONDITIONS MIN | TYP | MAX | MIN | TYP | MAX Re (22) 1.05 mmhos Output Admittance Im (22) P 1.54 mmhos Re (21) | Forward Transmittance 13.23 mmbhos | Vpg = 15V, Ip = 18mA Im (21) 5.62 mmhos | Vag = 10V,f = 200MHz Re (12) Reverse Transmittance 0.01 mmhos fm (12) ~0.04 mmhos 13 16 dB f = 500MHz Gps Power Gain Vos = 18V 17 | 20 dB | f=200MHz | Vgog = 10V 5.0 6.0 dB f = 500MHz Ip = 18MA NF Noise Figure 1.5 25 dB f = 200MHz 40 dB Vais = 3.5V _ AGC Range of Automatic f = 500MHz Vos = 15V (@2s)! gain Control 50 GB | Vais = 25V | Va2s = 10V Gis to OV f = 200MHz Interfering Signal at 200 mV | fo = S00MHz Gate for 1% Cross- fl =501MHz | Vpsg = 16V E\nt Modulation Distortion Vaos = 10V (eax Voltage fet. fo = 200MHz | Ip = 18mA to 50 ohm system) 480 mv fi = 196MHz Conversion Vos = 15V, Vais = Vazs Gose Power Gain (ip = 8mA) 14 7 dB frf = 200MHz, fl = 245MHz 3-67