BAS86-M
Document Number 83402
Rev. 1.0, 13-Jan-11
Vishay Semiconductors
www.vishay.com
1
94 9371
For technical questions within your region, please contact one of the following:
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Small Signal Schottky Diode
Features
• For general purpose applications
• This diode features low turn-on voltage.
The devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
• Metal-on-silicon Schottky barrier device
which is protected by a PN junction guard
ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
Applications
• Applications where a very low forward voltage is
required
Mechanical Data
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/2.5K per 7" reel (8 mm tape), 12.5K/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Part Ordering code Type marking Remarks
BAS86-M BAS86-M-18 or BAS86-M-08 - Tape and reel
Parameter Test condition Symbol Value Unit
Continuous reverse voltage VR50 V
Forward continuous current IF2001) mA
Repetitive peak forward current tp < 1 s, ν ≤ 0.5 IFRM 5001) mA
Power dissipation1) Ptot 2001) mW
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambient air RthJA 3001) K/W
Junction temperature Tj125 °C
Ambient operating temperature
range Tamb - 65 to + 125 °C
Storage temperature range TS- 65 to +150 °C
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Document Number 83402
Rev. 1.0, 13-Jan-11
BAS86-M
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Min. Typ. Max. Unit
Reverse breakdown voltage IR = 10 µA (pulsed) V(BR) 50 V
Leakage current VR = 40 V IR5µA
Forward voltage
Pulse test tp < 300 µs,
IF = 0.1 mA, δ < 2 % VF200 300 mV
Pulse test tp < 300 µs,
IF = 1 mA, δ < 2 % VF275 380 mV
Pulse test tp < 300 µs,
IF = 10 mA, δ < 2 % VF365 450 mV
Pulse test tp < 300 µs,
IF = 30 mA, δ < 2 % VF460 600 mV
Pulse test tp < 300 µs,
IF = 100 mA, δ < 2 % VF700 900 mV
Diode capacitance VR = 1 V, f = 1 MHz CD8pF
Reverse recovery time IF = 10 mA, IR = 10 mA,
Irr = 1 mA, trr 5ns
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
Figure 2. Reverse Current vs. Junction Temperature
15827
0
50
100
150
200
250
300
350
400
450
500
25 50 75 100 125 150
Tj- Junction Temperature (°C)
P - Reverse Power Dissipation (mW)
R
- Limit
at 100 %V
PR
R
- Limit
at 80 %V
PR
R
RthJA = 540 K/W
VR= 50 V
1
10
100
1000
10000
25 50 75 100 125 150
15828
I - Reverse Current (µA)
R
T
j
- Junction Temperature (°C)
V
R
=V
RRM
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Diode Capacitance vs. Reverse Voltage
15829
0 0.5 1.0 1.5
0.1
1
10
100
1000
I- Forward Current (A)
F
VF- Forward Voltage (V)
Tj= 25 °C
Tj= 125 °C
15830
0
1
2
3
4
5
6
7
8
9
10
0.1 1 10 100
f = 1 MHz
VR- Reverse Voltage (V)
C - Diode Capacitance (pF)
D
BAS86-M
Document Number 83402
Rev. 1.0, 13-Jan-11
Vishay Semiconductors
www.vishay.com
3
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Package Dimensions in millimeters (inches): MiniMELF SOD-80
Cathode indification
0.47 (0.019) max.
2.5 (0.098) max. 1.25 (0.49) min.
3.7 (0.146)
3.3 (0.130)
5 (0.197) ref.
2 (0.079) min.
1.6 (0.063)
1.4 (0.055)
Foot print recommendation:
*
* The gap between plug and glass can
be either on cathode or anode side
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
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Revision: 12-Mar-12 1Document Number: 91000
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