221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
1N4148-G / LL4148-G
FAST SWITCHING DIODE
Data Sheet 4225, Rev. -
Feat ures
" Fast Switching Speed
" Glass Package Version for High Reliability A B A A
" High Conductance
" Available in Both Through-Hole and Surface B
Mount Versions C
D C
1N4148-G LL4148-G
Mechanical Data
" Case: DO-35, MiniMELF
" Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
" Polarity : Cathode Band
" Weight: DO-35 0.13 grams
MiniMELF 0.05 grams
" Marking: Cathode Band Only
Maximum Ratings @TA=25°C unless otherwise speci f i ed
Characteri stic Symbol Val ue Unit
Non-Repeti tive Peak Revers e Voltage VRM 100 V
Peak Repetiti ve Revers e Voltage
Working Peak Reverse Voltage
DC Bl ocking Voltage
VRRM
VRWM
VR 75 V
RMS Revers e Voltage VR(RMS) 53 V
Forward Continuous Current (Note 1) IFM 300 mA
Rectified Current (Average), Hal f Wave Rectification with
Resi stive Load and f 50MHz (Note 1) IO 150 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
@ t = 1.0µs IFSM 1.0
2.0 A
Power Dissipation (Not e 1)
Derate Above 25°C Pd 500
1.68 mW
mW/°C
Thermal Resis tance, J unction to Ambient Air (Note 1) RθJA 300 K/W
Operati ng and S torage Temperature Range Tj, TSTG -65 to +175 °C
DO-35
SENSITRON
SEMI CONDUCTOR
Dim Min Max Min Max
A 25.40 — 1.000 —
B — 4.00 — 0.157
C — 0.60 — 0.024
D — 2.00 — 0.079
in mm In inch
MiniMELF
Dim MIn Max MIn Max
A 3.30 3.70 0.130 0.146
B 1.30 1.60 0.051 0.063
C 0.28 0.50 0.011 0.020
In mm In inch
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221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
1N4148-G / LL4148-G
FAST SWITCHING DIODE
Data Sheet 4225, Rev. -
Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Maximum Forward Voltage VFM 1.0 V IF = 10mA
Maximum Peak Reverse Current IRM
5.0
50
30
25
µA
µA
µA
nA
V
R = 75V
V
R = 70V, Tj = 150°C
V
R = 20V, Tj = 150°C
V
R = 20V
Capacitance Cj4.0 pF VR = 0, f = 1.0MHz
Reverse Recovery Time trr4.0 ns
I
F = 10mA to IR = 1.0m A
V
R = 6.0V, RL = 100Ω
Note: 1. Di ode on Ceramic S ubstrate 10mm x 8m m x 0.7mm.



1
10
100
1000
10,000
0 100 200
I , LEAKAGE CURRENT (nA)
R
T , JUNCTION TEMPERATURE ( C)
Fig. 2, Leakage Current vs Junction Temperatur
e
j
°
V = 20V
R
10
1.0
100
1000
0.1
0.01
01
2
I , INSTANTANE
O
US F
O
RWARD CURRENT (mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
F
SENSITRON
SEMI CONDUCTOR
Green Products
221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798
Wor ld Wide We b Sit e - http://www.s ensitron. co m E-Mail Address - sales@sensitron.com
Data Sheet 4225, Rev.



SENSITRON
SEMI CONDUCTOR 1N4148-G/LL4148-G
FAST SWITCHING DIODE
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of
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