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Page <1> V1.010/09/12
Bipolar Transistor
Description:
This NPN transistor in a TO–3 package is designed
for high voltage switching applications.
Applications:
• Off Line Power Supplies
• Converter Circuits
• Pulse Width Modulated Regulators Specication Feature:
• High Voltage Capability
• Fast Switching Speeds
• Low Saturation Voltage
Absolute maximum Ratings:
Collector-Emitter Voltage, Vceo : 400V
Collector-Emitter Voltage, Vcex : 450V
Collector-Emitter Voltage, Vcev : 650V
Emitter-Base Voltage, veb : 8V
Collector Current, Continuous Ic : 15A
Base Current Peak, Icm : 20A
Total Device Dissipation (Tc = +25°C), Pd : 175W
Derate Above 25°C : 1.0W/°C
Operating Junction Temperature Range, Tj : -65°C to +200°C
Storage Temperature Range, Tstg : -65°C to +200°C
Thermal Resistance, Junction-to-Case, Rthjc : 1.0°C/W
Maximum Lead Temperature
(During Soldering, 1/8” from case, 5sec), Tl : +275°C
Electrical Characteristics: (Ta = +25ºC Unless otherwise specied)
Parameter Symbol Test Conditions Min Max Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage Vceo (sus)Ic = 200mA, Ib = 0 400 - V
Collector Cut-off Current Icev Vce = 650V, Veb(off) = -1.5V -0.1
mAVce = 650V, Veb (off) = 1.5V, Tc = +100°C -1.0
Emitter Cut-off Current Iebo Veb = 8V, Ic = 0 -2.0
ON Characteristics (Note 1)
DC Current Gain hfe Ic = 15A, Vce = 3V 8- -
Collector-Emitter Saturation Voltage Vce(sat)Ic = 15A, Ib = 3A -1.5 V
Base-Emitter Saturation Voltage Vbe(sat)Ic = 15A, Vce = 3A 1.5
Dynamic Characteristics
Current Gain-Bandwidth Product fTVce = 20V, Ic = 20mA, f = 100MHz 3 - MHz
Output Capacitance Cob Vcb = 10V, Ie = 0, f = 1MHz -500 pF
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Page <2> V1.010/09/12
Bipolar Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Switching Characteristics
Delay Time tdVcc = 200V, Ic = 15A, Ib1 = Ib2 = 3A
Duty Cycle <
=
2%
Vbb = 6V, Rl = 13.5Ω
-0.2
µs
Rise Time tr-0.6
Storage Time ts-2.5
Fall Time tf-0.6
Notes: 1. Pulse Test: Pulse Width 300µs, Duty Cycle <
=
2%.
Part Number Table
Description Part Number
Transistor, Bipolar, Metal, TO-3, NPN 2N6678
Dim Min Max
A 38.75 39.96
B19.28 22.23
C7.96 9.28
D11.18 12.19
E25.2 26.67
F 0.92 1.09
G1.38 1.62
H29.9 30.4
I16.64 17.3
J3.88 4.36
K10.67 11.18
Dimensions : Millimetres
