TOSHIBA MPS2222A | Transistor Unit in mm Silicon NPN Epitaxial Type 5.1 Max t For General Purpose Use ; fad < Medium-Speed Switching and 4s | OY 4 2 Audio to VHF Frequency Applications | 3 a4 | S aj Features DC Current Gain Specified - 0.1 ~ 500mA Low Collector-Emitter Saturation Voltage | 222 127 - Voeisaty = 1-0V(Max.) @ Ig = 500mA, 3 T 3 High Transition Frequency 4 oto 3 - @icg = 20mA; 300MHz (Min.) 12 3 Z * Complementary to MPS2907A L Absolute Maximum Ratings (Ta = 25C) L. EMITTER 2 BASE CHARACTERISTIC SYMBOL | RATING | UNIT COLLECTOR Collector-Base Voltage Veo 15 Vv JEDEC TO-92 Collectos-Emitter Voltage Veco 40 V EIAJ c-43 Emitter-Base Voltage Veg 6 V TOSHIBA 2-SFI1F Collector Current le 600 mA Weight : 0.2lg Base Current lp 160 mA Tota! Device Dissipation 625 mW @ (Te = 25e06) Po Derate above 25000 5.0 mW Vos Totat Device Dissipation 15 W @ (Ta = 25006) Pr Derate above 2526 v2 mWiesC Junction Temperature jj 150 oC Storage Temperature Range Tyg -55 ~ 150 oof TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. 407MPS2222A Discrete Semiconductors Electrical Characteristics (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | MAX. | UNIT Collector Cut-off Current leso Veg = 60V, Ip =0 - 10 nA Collector Cut-off Current leo Vog = 6OV, Ip = 0, Ta = 150006 - 10 pA Collector Cut-off Current Ioex Voge = G0V, lpg = -3V - 1 nA Emitter Cut-off Current lego Veg = 9.0V, Ip = 0 - 10 nA Base Cut-off Current lap Vog = 60V, Veg = -3V - 20 nA Collector-Base Viericpo | Ig = 10pA, |p =0 75 - V Breakdown Voltage Collector-Emitter Very ceo | Ic = 10MA, tg = 0 40 ~ v Breakdown Voltage Emitter-Base Veerjepo | le = 10pA, ip= 0 6.0 - Vv Breakdown Voltage Vee = 10V, tp = 0.1mA 36 - Voge = 10V, Ip = 1.0mA 50 - DC Current Gain Neg Nce= 10 to = Wma * Vog = 10V, Ip = 150mA 100 300 Voge = 10V, Ip = 500mA 40 - Veg = 1V, le = 150mA 50 Vog = 10, lp = 10mA, 35 Ta = -SSeoC Collector-Emitter Vesa) | Ie = 150mA, tg = 15mA - 03 V Saturation Voltage i, 2 5O0MA, lp = 50mA - 10 Base-Emitter Vegisa) | Ip = 150mA, Jp = 15mA 0.6 12 V Saturation Voltage 1g = 500MA, lg = SOMA = 30 Transition Frequency i Vog = 20V, Ip = 20mA, f = 100MHz 300 - MHz Collector Output Capacitance Cob Vog = 10V, Ip = 0, f = 100kHz - 8.0 pF Input Capacitance Cp Veg = 0.5V, Ip = 0, f= 100kHz - 25 pF Collector-Base Time Constant Cotyy | Vog = 20V, Ie = 20mA, f = 31.8MHz - 150 ps Output Capacitance Noise Figure NF Vog = 10V, Ip = 100HA Re = 1k, f= 1kHz | = - 40 dB Delay Time iy Voc = SOV, Veeiot = -0.5 ~ 10 Switching Rise Time t fe om" = toms ~ 3 ns Time Storage Time ty | Cy = 30V, p= 150mA, ~ | 225 Fall Time i pe = 1omA - 60 408 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.Discrete Semiconductors MPS2222A Figure 1. DELAY AND RISE TIME EQUIVALENT TEST CURCUIT Figure 2. STORAGE TIME AND FALL TIME EQUIVALENT TEST CIRCUIT 30V 1<10046 1 <SOns oe SS +16V OUTPUT INPUT Qo f lav Pw 1~ 100ps DUTY CYCLE = 2.0% DUTY CYCLE = 2.0% 30V SCOPE RISE TIME < 4ns * Cg : TOTAL SHUN CAPACITANCE TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. 409