Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Shottky barrier diode
RB876W
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
High frequency detection
Features
1) Ultra small mold type. (EMD3)
2) Low Ct and high detection efficiency.
Construction Structure
Silicon epitaxial planar
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRV
Io mA
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit
VF- - 0.35 V IF=1mA
IR- - 120 μAVR=5V
Ct - 0.53 0.80 pF VR=1V, f=1MHz
Capacitance between terminals
Conditions
(*1) Rating of per diode
Parameter
Forward voltage
Reverse current
Junction temperature 125
Storage temperature 40 to 125
Average rectified forward current (*1) 10
Parameter Limits
Reverse voltage 5
EMD3
1.0
0.7
0.5
0.5
0.7
0.7
0.6 0.6
1.3
4.0±0.1 2.0±0.05 φ1.55±0.1
0
3.5±0.05 1.75±0.1
8.0±0.2
φ0.5±0.1
1.8±0.2
0.3±0.1
1.8±0.1
5.5±0.2
0.9±0.2
0～0.1
φ1.5 0.1
0
ROHM : EMD3
JEITA : SC-75A
JEDEC : SOT-416
dot (year week factory)
(3)
1.6±0.2
1.6±0.2
1.0±0.1
0.8±0.1
0.5 0.5
(2) (1)
0.15±0.05
0.7±0.1
0.55±0.1
0.1Min
0～0.1
0.2±0.1
-0.05
0.3±0.1
0.05
1/2 2011.04 - Rev.B
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB876W
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
0.01
0.1
1
10
0 300 600 900 1200 1500
1
10
100
1000
012345
0.1
1
012345
f=1MHz
250
260
270
280
290
300
AVE:275.2mV
Ta=25℃
IF=1mA
n=30pcs
0
50
100
150
200
250
300
Ta=25℃
VR=5V
n=30pcs
AVE:21.63uA
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
AVE:0.520pF
Ta=25℃
f=1MHz
VR=1V
n=10pcs
0
1
2
3
4
5
AVE:0.48kV
AVE:1.47kV
C=100pF
R=1.5kΩ
C=200pF
R=0Ω
Ta=-25℃
Ta=125℃
Ta=25℃
Ta=75℃
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
2/2 2011.04 - Rev.B
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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Notes
