MMBD1201 / 1203 / 1204 / 1205
High Conductance Ultra Fast Diode
Sourced from Process 1P.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
WIV Workin g Inverse Voltage 50 V
IOAverage Rectified Current 200 mA
IFDC Forwa rd Current 600 mA
ifRecurrent Peak Forward Current 700 mA
if(surge) Peak Forward Surge Curren t
Pulse width = 1.0 second
Pulse width = 1.0 microsecond 1.0
2.0 A
A
Tstg Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperature 150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Symbol Characteristic Max Units
MMBD1201/1203/1204/1205*
PDTotal D evice Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
CONNECTION DIAGRAMS
3
21
3
21
3
21
3
12 NC
1201
1204 1205
1203
24
3
12
MARKING
MMBD1201 24 MMBD1204A 27
MMBD1203 26 MMBD1205A 28
SOT-23
3
1
2
MMBD1201 / 1203 / 1204 / 1205
Discrete POWER & Signal
Technologies
ã1997 Fairchild Semiconductor Corporation
Electrical Characteristics TA = 25°C unless otherwise noted
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
1 2 3 5 10 20 30 50 100
110
120
130
140
150
I - REVERSE CURRENT (uA)
V - REVERSE VOLT AGE (V)
R
R
Ta= 25°C
R
R
Ta= 25°C
REVERSE CUR RE NT vs REVERSE VOLTA GE
IR - 10 to 100 V
GENERAL RULE: The Reverse Curre nt of a diode will approximately
double for every ten (10) Degree C increase in Temperature
10 20 30 50 70 100
0
50
100
150
200
250
300
V - REVERSE VOLTAGE (V)
I - REVERSE CURRENT (nA)
225
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
1 2 3 5 10 20 30 50 100
250
300
350
400
450
I - FORWARD CURRENT (uA)
V - FORWARD VOLTAGE (mV)
F
F
485 Ta= 25°C
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
0.1 0.2 0.3 0.5 1 2 3 5 10
450
500
550
600
650
700
I - FORWARD CURRENT (mA)
V - FORWARD VOLTAGE (mV)
F
F
725 Ta= 25°C
Symbol Parameter Test Conditions Min Max Units
BVBreakdown Voltage IR = 100
µ
A100 V
IRReverse Current VR = 20 V
VR = 50 V
VR = 50 V, TA = 150°C
25
50
5.0
nA
nA
µ
A
VFForward Vol tage IF = 1.0 mA
IF = 10 mA
IF = 100 mA
IF = 200 mA
IF = 300 mA
550
660
820
0.87
600
740
920
1.0
1.1
mV
mV
mV
V
V
CTDiode Capacitance VR = 0, f = 1.0 MHz 2.0 pF
TRR Reverse Recovery Time IRR = 1.0 mA, IF = IR = 10 mA,
RL = 100Ω4.0 nS
VR
VF
VF
High Conductance Ultra Fast Diode
(continued)
MMBD1201 / 1203 / 1204 / 1205
Typical Characteristics (continued)
Average Rectified Current (Io) &
Forward Current (I ) versus
Ambient Temperatur e (T )
0 50 100 150
0
100
200
300
400
500
T - AMBIENT TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
I - FORWARD CURRENT STEADY STAT E - mA
o
D
R
A
F
Io - AVERAGE RECTIFIED CURRENT - mA
A
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 - 800 mA
10 20 30 50 100 200 300 500
0.6
0.8
1
1.2
1.4
I - FORWARD CURRENT (mA)
V - FORWARD VOLTAGE (V)
F
F
1.5 Ta= 25°C
CAPACITANCE vs REVERSE VOLTAGE
VR - 0.0 to 15 V
02468101214
1
1.1
1.2
1.3
REVERSE VOLTAGE (V)
CAPACITANCE (pF)
Ta= 25°C
15
REVERSE RECOVERY TIME vs REVERSE CURRENT
TRR - IR 10 mA vs 60 mA
IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms
10 20 30 40 50 60
1
1.5
2
2.5
3
3.5
4
REVERSE CURRENT (mA)
REVERSE RECOVERY (nS)
Ta= 25°C
POWER DERATING CURVE
0 50 100 150 200
0
100
200
300
400
500
I - AVERAGE TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
O
D
o
DO-35 Pkg
SOT-23 Pkg
VF
PD
High Conductance Ultra Fast Diode
(continued)
MMBD1201 / 1203 / 1204 / 1205
TRADEMARKS
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quite Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
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Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The data sheet is printed for reference information only.
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In Design
First Production
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