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FDD4243 40V P-Channel PowerTrench® MOSFET
©2007 Fairchild Semiconductor Corporation
FDD4243 Rev. 1.3
www.fairchildsemi.com
1
FDD4243
40V P-Channel PowerTrench® MOSFET
-40V, -14A, 44m
Features
Max rDS(on) = 44m at VGS = -10V, ID = -6.7A
Max rDS(on) = 64m at VGS = -4.5V, ID = -5.5A
High performance trench technology for extremely low rDS(on)
RoHS Compliant
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications.
Application
Inverter
Power Supplies
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage -40 V
VGS Gate to Source Voltage ±20 V
ID
Drain Current -Continuous (Package limited) TC= 25°C -14
A
-Continuous (Silicon limited) TC= 25°C (Note 1) -24
-Continuous TA= 25°C (Note 1a) -6.7
-Pulsed -60
EAS Single Pulse Avalanche Energy (Note 3) 84 mJ
PD
Power Dissipation TC= 25°C 42 W
Power Dissipation (Note 1a) 3
TJ, TSTGOperating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case 3.0 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 40
Device Marking Device Package Reel Size Tape Width Quantity
FDD4243 FDD4243 D-PAK(TO-252) 13’’ 16mm 2500 units
G
S
D
TO-252
D-PAK
(
TO-252
)
S
G
D
March 2015
FDD4243 40V P-Channel PowerTrench® MOSFET
FDD4243 Rev. 1.3 www.fairchildsemi.com
2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -40 V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient ID = -250µA, referenced to 25°C -32 mVC
IDSS Zero Gate Voltage Drain Current VDS = -32V, -1µA
VGS = 0V TJ = 125°C -100
IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA-1.4 -1.6 -3.0 V
VGS(th)
TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = -250µA, referenced to 25°C 4.7 mV/°C
rDS(on) Drain to Source On Resistance
VGS = -10V, ID = -6.7A 36 44
mVGS = -4.5V, ID = -5.5A 48 64
VGS = -10V, ID = -6.7A, TJ = 125°C 53 69
gFS Forward Transconductance VDS = -5V, ID = -6.7A 16 S
Dynamic Characteristics
Ciss Input Capacitance VDS = -20V, VGS = 0V,
f = 1MHz
1165 1550 pF
Coss Output Capacitance 165 220 pF
Crss Reverse Transfer Capacitance 90 135 pF
RgGate Resistance f = 1MHz 4
Switching Characteristics
td(on) Turn-On Delay Time
VDD = -20V, ID = -6.7A
VGS = -10V, RGEN = 6
6 12 ns
trRise Time 15 26 ns
td(off) Turn-Off Delay Time 22 35 ns
tfFall Time 7 14 ns
Qg(TOT) Total Gate Charge at 10V VDD = -20V, ID = -6.7A
VGS = -10V
21 29 nC
Qgs Gate to Source Gate Charge 3.4 nC
Qgd Gate to Drain “Miller” Charge 4 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -6.7A (Note 2) 0.86 1.2 V
trr Reverse Recovery Time IF = -6.7A, di/dt = 100A/µs 29 43 ns
Qrr Reverse Recovery Charge 30 44 nC
Notes:
1: RθJA is sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is
guaranteed by design while RθJC is determined by the user’s board design.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 7.5A, VDD = 40V, VGS = 10V.
a. 40°C/W when mounted on a 1 in2
p ad o f 2 oz c o pp e r
b. 96°C/W when mounted on a minimum pad.
FDD4243 40V P-Channel PowerTrench® MOSFET
FDD4243 Rev. 1.3 www.fairchildsemi.com
3
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1.
012345
0
10
20
30
40
50
60
VGS = -5V
VGS = -10V
VGS = - 6V VGS = -4.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = - 3.0V
VGS = -4V
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics Figure 2.
0 102030405060
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS = -6V
VGS = -10V
VGS = -5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT(A)
VGS = -4.5V
VGS = -3.0V
VGS = -4V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID = -6.7A
VGS = -10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Temperature
Figure 4.
2345678910
20
40
60
80
100
120
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 125oC
TJ = 25oC
ID = -6.7A
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (m)
-VGS, GATE TO SOURCE VOLTAGE (V)
O n -R e si s ta n ce v s G a te t o
Source Voltage
Figure 5. Transfer Characteristics
123456
0
10
20
30
40
50
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = -55oC
TJ = 25oC
TJ = 150oC
-ID, DRAIN CURRENT (A)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.40.60.81.01.2
0.1
1
10
TJ = -55oC
TJ = 25oC
TJ = 150oC
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
30
S ou r ce t o D r a in D io d e
Forward Voltage vs Source Current
FDD4243 40V P-Channel PowerTrench® MOSFET
FDD4243 Rev. 1.3 www.fairchildsemi.com
4
Figure 7.
0 4 8 12162024
0
2
4
6
8
10
ID = -6.7A
VDD = -30V
VDD = -20V
VDD = -10V
Qg, GATE CHARGE(nC)
-VGS, GATE TO SOURCE VOLTAGE(V)
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
50
30
3000
f = 1MHz
VGS = 0V
CAPACITANCE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.01 0.1 1 10
2
4
6
8
10
TJ = 25oC
TJ = 125oC
tAV, TIME IN AVALANCHE(ms)
-IAS, AVALANCHE CURRENT(A)
1
30
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
25 50 75 100 125 150
0
5
10
15
20
25
Limited by Package
RθJC = 3.0oC/W
VGS = -4.5V
VGS = -10V
-ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Fi gur e 11. For w ar d Bia s Sa f e
Operating Area
110100
0.1
1
10
100
0.5
100ms
10ms
1ms
100us
SINGLE PULSE
TJ = MAX RATED
TC = 25OC
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
-VDS, DRAIN to SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 12.
10-5 10-4 10-3 10-2 10-1 100101
100
1000
10000
30
VGS = -10V
SINGLE PULSE
P(PK), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
T
C
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150 TC
125
----------------------
S i n g l e P u l s e M a x i m u m
Power Dissipation
Typical Characteristics TJ = 25°C unless otherwise noted
FDD4243 40V P-Channel PowerTrench® MOSFET
FDD4243 Rev. 1.3 www.fairchildsemi.com
5
Figure 13. Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-1 100101
0.01
0.1
1
0.003
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJC
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
Typical Characteristics TJ = 25°C unless otherwise noted
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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