JAN2N918 - N/A - searchdatasheet.com

MIL-PRF-19500/301F

16 February, 2002

SUPERSEDING

MIL-PRF-19500/301E

4 October 2000

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, LOW-POWER

TYPE 2N918 AND 2N918UB

JAN, JANTX, JANTXV AND JANS, JANHC and JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the detail requirements for NPN, silicon, ultra-high frequency transistors.

Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500 and two levels of

product assurance are provided for unencapsulated devices.

1.2 Physical dimensions. See figure 1 (TO - 72), figure 2 for UB and figure 3 (JANHC and JANKC).

1.3 Maximum ratings.

Types

PT 1/

TA = +25°C

VCBO

VCEO

VEBO

IC

TSTG and TJ

mW

V dc

mA dc

°C

2N918

2N918UB

200

30

15

3.0

50

-65 to +200

1

/ Derate linearly, 1.14 mW/°C above TA= 25°C

1.4 Primary electrical characteristics at TA = +25°C.

Limit

|hFE|

VCE = 10 V dc

IC = 4 mA dc

f = 100 MHz

rb' Cc

VCB = 10 V dc

IE = -4.0 mA dc

f = 79.8 MHz

Cobo

VCB = 10 V dc

IE = 0 mA dc

100 kHz ≤f≤1 MHz

NF

VCE = 6 V dc

IC = 1 mA dc

f = 60 MHz

gs = 2.5 mmho

Gpe

VCB = 12 V dc

IC = 6.0 mA dc

f = 200 MHz

ps

pF

DB

dB

Minimum 6.0 15

Maximum

18.0

25

1.7

6.0

AMSC N/A FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

INCH-POUND

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box

3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426)

appearing at the end of this document or by letter.

The documentation and process conversion measures necessary to

comply with this document shall be completed by 16 May, 2002.

MIL-PRF-19500/301F

2

1.4 Primary electrical characteristics at TA = +25°C - Continued.

Limit

hFE1

VCE = 10 V dc

IC = 500 µA dc

hFE2

VCE = 1.0 V dc

IC = 3.0 mA dc

hFE3

VCB = 10 V dc

IC = 10 mA dc

Minimum

10

20

Maximum 200

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. W hile every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and

supplement thereto, cited in the solicitation (see 6.2).

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-19500 - Semiconductor Devices, General Specification for.

STANDARD

DEPARTMENT OF DEFENSE

MIL-STD-750 - Test Methods for Semiconductor Devices.

(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the

Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,

Philadelphia, PA 19111-5094.)

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited

herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws

and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The requirements for acquiring the product described herein shall consist of this document and

MIL-PRF-19500.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

MIL-PRF-19500/301F

3

Dimensions

Inches Millimeters

Symbol Min Max Min Max

Notes

CD .178 .195 4.52 4.95 5

CH .170 .210 4.32 5.33

HD .209 .230 5.31 5.84 5

LC .100 TP 2.54 TP 7,8

LD .016 .021 .406 .533 7,8

LL .500 .750 12.70 19.05 7,8

LU .016 .019 .41 .48

L1 .050 1 .27

L2 .250 6.35

P .100 2.54

Q .040 1.02 5

TL .028 .048 .71 1.22

TW .036 .046 .91 1.17

r .007 .18

α 45° TP

NOTES:

1. Dimension are in inches.

2. Metric equivalents are given for general information only.

3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm).

4. Dimension TL measured from maximum HD.

5. Body contour optional within zone defined by HD, CD, and Q.

6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within

.007 inch (0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.

The device may be measured by direct methods or by the gauge and gauging procedure shown in figure 2.

7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is

uncontrolled in L1 and beyond LL minimum.

8. All four leads.

9. Dimension r (radius) applies to both inside corners of tab.

10. In accordance with ANSI Y14.5M, diameters are equivalent to Φx symbology.

11. Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected).

FIGURE 1. Physical dimensions for 2N918, (T0-72).

TO-72

MIL-PRF-19500/301F

4

Dimensions

Symbo

l Inches Millimeters Note

Min Max Min Max

A .046 .056 0.97 1.42

A1 .017 .035 0.43 0.89

B1 .016 .024 0.41 0.61

B2 .016 .024 0.41 0.61

B3 .016 .024 0.41 0.61

D .085 .108 2.41 2.74

D1 .071 .079 1.81 2.01

D2 .035 .039 0.89 0.99

D3 .085 .108 2.41 2.74

E .115 .128 2.82 3.25

E3 .128 3.25

L1 .022 .038 0.56 0.96

L2 .022 .038 0.56 0.96

NOTES:

1. Dimensions are in inches.

2. Metric equivalents are given for general information only.

FIGURE 2. Physical dimensions for 2N918UB, surface mount.

UB

MIL-PRF-19500/301F

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BE

Die size--------- .016 x .016 inches, (0.406 mm X 0.406mm).

Die thickness--- .008 ± .0016 inches, (0.203 mm X 0.406mm).

Base pad-------- .0027 x .0027 inches, (0.069 mm X 0.069 mm).

Emitter pad----- .0027 x .0027 inches, (0.069 mm X 0.069 mm).

Back metal----- Gold, 6500 ± 1950 Ang

Top metal------ Aluminum, 17500 ± 2500 Ang

Back side------ Collector

Glassivation--- SiO2, 7500 ± 1500 Ang

FIGURE 3. JANHC and JANKC (A-version) die dimensions.

MIL-PRF-19500/301F

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3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows.

gs............ Noise source conductance.

Po............ Oscillator, power output.

RBE.......... External resistance, base to emitter.

3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in

MIL-PRF-19500, and figures 1, 2, and 3 herein.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.6 Electrical test requirements. The electrical test requirements shall be the subgroups in table I herein.

3.7 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

* 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in ac cordance with

MIL-PRF-19500.

MIL-PRF-19500/301F

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4.3 Screening. Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The

following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I

herein shall not be acceptable.

Screen (see table IV

of MIL-PRF-19500)

Measurement

JANS level

JANTX and JANTXV levels

*3c

Thermal impedance, method 3131 of

MIL-STD-750.

Thermal impedance, method 3131 of

MIL-STD-750.

9

ICBO1 and hFE2

11

ICBO1 and hFE2

∆ICBO1 = 100 percent of initial value or

5 nA dc, whichever is greater;

∆hFE2 = ±15 percent.

ICBO1 and hFE2

12

See 4.3.1

13

Subgroups 2 and 3 of table I herein;

∆ICBO1 = 100 percent of initial value or

5 nA dc, whichever is greater;

∆hFE2 = ±15 percent.

Subgroup 2 of table I herein;

∆ICBO1 = 100 percent of initial value or 5

nA dc, whichever is greater;

∆hFE2 = ±20 percent.

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows:

2N918, UB.........................VCB = 5 - 15 V dc, PT = 200 mW at TA = room ambient as defined in the general

requirements of paragraph 4.5 in MIL-STD-750.

NOTE: No heat sink or forced air cooling on the devices shall be permitted.

4.3.2. Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows

JANS requirements; the JANHC follows JANTX requirements.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein. Group A inspection shall be performed on each sublot.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I

herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and

4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2

herein. Delta measurements shall be in accordance with table II herein.

MIL-PRF-19500/301F

8

4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.

Subgroup Method Conditions

B3 2037 Test condition A. All internal leads for each device shall be pulled

separately.

* B4 1037 VCB = 10 V dc, 2,000 cycles.

* B5 1027 VCB = 10 V dc; 1,000 hours maximum rated power shall be applied and

ambient temperature adjusted to achieve TJ = +150°C minimum.

N = 45, c = 0.

4.4.2.2 Group B inspection, table VIb (JAN, JANTX and JANTXV). Separate samples may be used for each step.

In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed

assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the

failed assembly lot shall be scrapped.

Step Method Conditions

1 1027 Steady-state life: test condition B, 340 hours, VCB = 10 V dc; maximum rated power

shall be applied and ambient temperature adjusted to achieve TJ = +150°C minimum.

n = 45 devices, c = 0. For small lots, n = 12 devices, c = 0.

2 1027 The steady-state life test of step 1 shall be extended to 1,000 hours for each die

design. Samples shall be selected from a wafer lot every twelve months of wafer

production. Group B, step 2 shall not be required more than once for any single

wafer lot. n = 45, c = 0.

3 1032 High temperature life (non-operating), t = 340 hours; TA = +200°C. n = 22,

c = 0. “

4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following

requirements:

a. For JAN, JANTX and JANTXV samples shall be selected randomly from a minimum of three wafers (or

from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each

inspection lot. See MIL-PRF-19500.

b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2

conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high

temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX and

JANTXV) may be pulled prior to the application of final lead finish. “

MIL-PRF-19500/301F

9

4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and

JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in

accordance with group A, subgroup 2 and table II herein.

4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.

Subgroup Method Conditions

C2 2036 Test condition E., not applicable to UB.

C6 1026 VCB = 10 V dc, 1,000 hours; maximum rated power shall be applied and ambient

temperature adjusted to achieve TJ = +150°C minimum. N = 45 devices, c = 0.

For small lots, n = 12 devices, c = 0.

4.4.3.2. Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.

Subgroup Method Condition

C2 2036 Test condition E; not applicable for UB devices.

C6 Not applicable.

4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any

inspection lot containing the intended package type and lead finish procured to the same specification which is

submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any

plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of

final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be

considered as complying with the requirements for that subgroup.

* 4.4.4 Group E inspection. Group E inspection shall be performed for qualification or re-qualification only. In case

qualification was awarded to a prior revision of the associated specification that did not request the performance of

table III herein must be performed to maintain qualification.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750 except

that the output capacitor shall be omitted.

4.5.2 Disposition of case lead during electrical measurements. Unless otherwise specified all electrical

measurements and operating life test shall be performed with the case lead connected to the emitter.

4.5.3 Noise figure. The noise figure shall be measured using commercially available test equipment and its

associated standard test procedures (see figure 4).

4.5.4 Collector-base time constant. This parameter may be determined by applying an rf signal voltage of 1.0 volt

(rms) across the collector-base terminals, and measuring the ac voltage drop (Veb) with a high-impedance rf

voltmeter across the emitter-base terminals. With f = 79.8 MHz used for the 1.0 volt signal, the following

computation applies:

rb' Cc: (psec) = 2 x Veb (millivolts)

MIL-PRF-19500/301F

10

TABLE I. Group A inspection.

Inspection 1/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 1 2/

Visual and mechanical

examination 3/ 2071 n = 45 devices, c = 0

Solderability 3/ 4/

Resistance to solvents

3/ 4/ 5/

2026

1022

n = 15 leads, c = 0

n = 15 devices, c = 0

Temp cycling 3/ 4/

1051 Test condition C, 25 cycles.

n = 2 devices, c = 0

Heremetic seal 4/ 1071 n = 22 devices, c = 0

Fine leak

Gross leak

Electrical measurements 4/

Group A, subgroup 2

Bond strength 3/ 4/

2037 Precondition

TA = +250°C at t = 24 hrs or

TA = +300°C at t = 2 hrs

n = 11 wires, c = 0

Subgroup 2

Breakdown voltage, collector

to base

3036

Bias condition D, VCBO= 30V

ICBO2

1

µA dc

Breakdown voltage, collector

to emitter

3011

Bias condition D, IC = 3.0 mA dc

V(BR)CEO

15

V dc

Breakdown voltage, emitter to

base

3061

Bias condition D, VEB= 3V

IEBO2

10

µA dc

Collector to base cutoff

current

3036

Bias condition D, VCB = 25 V dc

ICBO1

10

nA dc

Emitter to base cutoff current

3061

Bias condition D, VEB = 2. 5 V dc

IEBO1

10

nA dc

Forward-current t ransfer ratio

3076

VCE = 10 V dc; IC = 500 µA dc;

hFE1

10

Forward-current t ransfer ratio

3076

VCE = 1.0 V dc; I C = 3.0 mA dc;

hFE2

20

200

Forward-current t ransfer ratio

3076

VCE = 10 V dc; IC = 10 mA dc;

hFE3

20

Collector to emitt er volt age

(saturated)

3071

IC = 10 mA dc; IB = 1.0 mA dc;

VCE(sat)

0.4

V dc

Base to emitter voltage

(saturated)

3066

Test condition A; IC = 10 mA dc;

IB = 1.0 mA dc

VBE(sat)

1.0

V dc

See footnotes at end of table.

MIL-PRF-19500/301F

11

TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 3

High temperature

operation

3036

TA = +150°C

Collector to base cutoff

current

Bias condition D, VCB = 25 V dc

ICBO2

1.0

µA dc

Low-temperature

operation

3076

TA = -55°C

VCE = 1.0 V dc; I C = 3.0 mA dc

hFE4

10

Forward-current t ransfer

ratio

3306

VCE = 10 V dc; IC = 4. 0 mA dc; f = 100 MHz

|hFE|

6.0

18

Noise figure

VCE = 6 V dc; IC = 1.0 mA dc; f = 60 MHz; gs

= 2.5 mmho (see 4.5.2, 4.5.3, and figure 4)

NF

6.0

dB

Small-signal power gain

3256

VCB = 12 V dc; IC = 6. 0 mA dc;

f = 200 MHz; (see figure 5)

Gpe

15

dB

Collector-base time

constant

VCB = 10 V dc; IE = -4.0 mA dc;

f = 79.8 MHz (see 4. 5.2 and 4.5.4)

rb' Cc

25

ps

Oscillator power output

VCB = 15 V dc; IC = 8. 0 mA dc; f = 500 MHz

(see figure 6)

Po

30

mW

Collector efficiency

VCB = 15 V dc; IC = 8.0 mA dc; f = 500 MHz

(see figure 6)

η

25

%

Subgroup 5

Not applicable

1/ For sampling plan (unless otherwise specified see MIL-PRF-19500.

2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure

in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon

submission.

3/ Separate samples may be used.

4/ Not required for JANS devices.

5/ Not required for laser marked devices.

MIL-PRF-19500/301F

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TABLE II. Groups B and C delta electrical measurements. 1/ 2/ 3/

Step

Inspection

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

1.

Collector-base

cutoff current

3036

Bias condition D; VCB = 25 V dc

∆ICBO1 3/

100 percent of initial

value or 5 nA dc,

whichever is greater.

2.

Forward-current

transfer ratio

3076

VCE = 1.0 V dc; IC = 3.0 mA dc

∆hFE2 3/

± 25 percent change

from initial reading

3.

Collector-emitter

voltage (saturated)

3071

IC = 10 mA dc; IB = 1.0 mA dc

∆VCE(sat) 3/

± 50 mV dc change from

previously measured

value.

1/ The delta electrical measurements for table VIa (JANS) of MIL-PRF-19500 are as follows:

a. Subgroup 4, see table II herein, step 3.

b. Subgroup 5, see table II herein, steps 1, 2 and 3.

2/ The delta electrical measurements for table VII of MIL-PRF-19500 are as follows: subgroup 6, see table II herein,

steps 1, 2 and 3 for JANS level.

3/ Devices which exceed the group A limits for this test shall not be acceptable.”

*TABLE III. Group E inspection (all quality levels) – for qualification only.

Inspection

MIL-STD-750 Qualification

Method Conditions

Subgroup 1

45 devices

c = 0

Temperature cycling

(air to air)

1051 Test condition C, 500 cycles.

Hermetric seal

1071

Fine leak

Gross leak

Electrical measurements

See group A, subgroup 2 and table II herein.

Subgroup 2

45 devices

c = 0

Intermitt ent life 1037 Intermittent operation life: VCB = 10 V dc;

6,000 cycles.

Electrical measurements

See group A, subgroup 2 and table II herein.

Subgroup 3, 4, 5, 6, and 7

Not applicable

Subgroup 8

Reverse stability

1033

Condition A ≥ 400 V

Condition B < 400 V

45 devices

c = 0

MIL-PRF-19500/301F

13

NOTES:

1. The test fixture shall consist of a 60 MHz tuned amplifier and suitable biasing circuits. It should

be constructed utilizing very high-frequency design techniques.

2. The effective source susceptance should be tuned for each device being tested to obtain

minimum noise figure.

3. The HP-343A has a 50-ohm output resistance, therefore a suitable impedance transformer

must be used to obtain an effective source conductance of 2.5 mmho at the transistor with

minimum losses.

FIGURE 4. Block diagram for noise-figure test.

MIL-PRF-19500/301F

14

NEUTRALIZATION PROCEDURE:

a. Connect a 200 MHz signal generator (with a 50 ohm output impedance) to the input terminals of the

amplifier, and connect a 50 ohm rf voltmeter to the output terminals of the amplifier.

b. Apply VEE and VCC to obtain the specified test conditions.

c. Adjust the output of the signal generator to approximately 10 millivolts and tune C1 and C3 for

maximum output.

d. Interchange the connections to the signal generator and rf voltmeter and with sufficient signal

applied at the output terminals, tune L2 for a minimum indication on the rf voltmeter.

e. Repeat this sequence until optimum settings are obtained for all variables.

CIRCUIT-COMPONENT INFORMATION:

C1: 3-12 pF

C2 and C7: 1000 pF

C3: 1.5 - 7.5 pF

C4 and C5: 0.01 µF

C6: 0.05 µF

L1: 3½ T No. 16 AWG 5/16" ID, 7/16" length, Turns ratio ≅ 2 to 1

L2: 0.4 - 0.65 µh, Miller No. 4303 (or equal)

L3: 8 T No. 16 AWG, 1/8" ID, 7/8" length, Turns ratio ≅ 8 to 1

L4: 200 MHz RFC

R1: 100Ω

R2: 1 kΩ

FIGURE 5. Small-signal power gain.

MIL-PRF-19500/301F

15

OSCILLATOR ADJUSTMENT PROCEDURE:

Measurement of Po shall be made in this circuit or a suitable equivalent. The circuit adjustment procedure is as

follows:

a. Set VCC and VEE to obtain the specified test conditions.

b. Adjust the stub tuner to obtain the maximum output at the specified frequency of oscillation.

c. Check IC and reset if necessary.

d. Read Po.

Note 1. Collector efficiency (η), may be determined as follows:

η in % Po X 100 Where Po is in milliwatts

120

CIRCUIT-COMPONENT INFORMATION:

C1 and C3: 1000 pF

C2: 50 pF

C4: 75 pF

R1: 2.2 kΩ

L1 and L3: 500 mC RFC

L2: 2 turns No. 16 AWG, 3/8" OD, 1¼" length

L4: 9 turns No. 22 AWG, 3/16" OD, ½" length

Double-stub tuner consists of the following commercially available components:

2 GR Type 874 TEE (or equivalent)

1 GR Type 874-D20 Adjustable Stub (or equivalent)

1 GR Type 874-LA Adjustable Line (or equivalent)

1 GR Type 874-WN3 Short-Circuit Termination (or equivalent)

FIGURE 6. Oscillator power output.

MIL-PRF-19500/301F

16

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements should be as specified in the contract or

order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to

contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements

are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency,

or within the Military Departments' System Command. Packaging data retrieval is available from the managing

Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the

responsible packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)

6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.

6.2 Acquisition requirements. Acquisition documents must specify the following:

a. Title, number, and date of this specification.

b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents

referenced (see 2.2.1).

c. Packaging requirements (see 5.1).

d. Lead finish (see 3.4.1).

6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which

are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not

such products have actually been so listed by that date. The attention of the contractors is called to these

requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal

Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the

products covered by this specification. Information pertaining to qualification of products may be obtained from

Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000.

6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter

version (example JANHCA2N918) will be identified on the QPL.

Die ordering information

PIN Manufacturer

34156

2N918

JANHCA2N918

JANKCA2N918

* 6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where

changes from the previous issue were made. This was done as a convenience only and the Government assumes

no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the

requirements of this document based on the entire content irrespective of the marginal notations and relationship to

the last previous issue.

MIL-PRF-19500/301F

17

Custodians: Preparing activity:

Army - CR DLA - CC

Navy - EC

Air Force - 11 (Project 5961-2556)

NASA - NA

DLA - CC

Review activities:

Army - AR, MI

Navy - AS, MC, SH

Air Force - 19, 99

STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL

INSTRUCTIONS

1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision

letter should be given.

2. The submitter of this form must complete blocks 4, 5, 6, and 7.

3. The preparing activity must provide a reply within 30 days from receipt of the form.

NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on

current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced

document(s) or to amend contractual requirements.

I RECOMMEND A CHANGE:

1. DOCUMENT NUMBER

MIL-PRF-19500/301F 2. DOCUMENT DATE

16 February 2002

3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, LOW-POWER TYPE 2N918 and 2N918UB

JAN, JANTX, JANTXV AND JANS, JANHC and JANKC

4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)

5. REASON FOR RECOMMENDATION

6. SUBMITTER

a. NAME (Last, First, Middle initial)

b. ORGANIZATION

c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code)

COMMERCIAL

DSN

FAX

EMAIL

7. DATE SUBMITTED

8. PREPARING ACTIVITY

a. Point of Contact

Alan Barone

b. TELEPHONE

Commercial DSN FAX EMAIL

614-692-0510 850-0510 614-692-6939 alan.barone@dscc.dla.mil

c. ADDRESS

Defense Supply Center Columbus

ATTN: DSCC-VAC

P.O. Box 3990

Columbus, OH 43216-5000

IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:

Defense Standardization Program Office (DLSC-LM)

8725 John J. Kingman, Suite 2533

Fort Belvoir, VA 22060-6221

Telephone (703) 767-6888 DSN 427-6888

DD Form 1426, Feb 1999 (EG) Previous editions are obsolete WHS/DIOR, Feb 99