©2001 Fairchild Semiconductor Corporation RHRG30120CC Rev. A
File Number
3411.3
RHRG30120CC
30A, 1200V Hyperfast Dual Diode
The RHRG30120CC is a hyperfast dual diode with soft
recovery characteristics (t
rr
< 65ns). It has half the recovery
time of ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of high frequency switching
power supplies and other power switching applications. Its
low stored charge and hyperfast soft recovery minimize
ringing and electrical noise in many power switching circuits,
thus reducing power loss in the switching transistors.
Formerly developmental type TA49041.
Symbol
Features
Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <65ns
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER PACKAGE BRAND
RHRG30120CC TO-247 RHR30120C
NOTE: When ordering, use the entire part number.
K
A1A2
CATHODE
(BOTTOM SIDE
ANODE 2
CATHODE
ANODE 1
METAL)
Absolute Maximum Ratings
(Per Leg) T
C
= 25
o
C
RHRG30120CC UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
1200 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
1200 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
1200 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
30 V
(T
C
= 78
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
60 V
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
300 V
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
125 W
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
30 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to 175
o
C
Data Sheet January 2000
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©2001 Fairchild Semiconductor Corporation RHRG30120CC Rev. A
Electrical Specifications
(Per Leg) T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
I
F
= 30A - - 3.2 V
I
F
= 30A, T
C
= 150
o
C - - 2.6 V
I
R
V
R
= 1200V - - 250
µ
A
V
R
= 1200V, T
C
= 150
o
C- - 1mA
t
rr
I
F
= 1A, dI
F
/dt = 100A/
µ
s- - 65ns
I
F
= 30A, dI
F
/dt = 100A/
µ
s- - 75 ns
t
a
I
F
= 30A, dI
F
/dt = 100A/
µ
s- 48 - ns
t
b
I
F
= 30A, dI
F
/dt = 100A/
µ
s- 22 - ns
R
θ
JC
- - 1.2
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 6), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 6).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 6).
R
θ
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
200
100
10
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
175
o
C
100oC
25oC
500
175oC
100
10
1
0.1
0.01
0.001 0 200 400 600 800 1000 1200
100oC
25oC
VR, REVERSE VOLTAGE (V)
IR, REVERSE CURRENT (µA)
RHRG30120CC
©2001 Fairchild Semiconductor Corporation RHRG30120CC Rev. A
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE
Typical Performance Curves
(Continued)
100
75
50
25
011030
t, TIME (ns)
IF, FORWARD CURRENT (A)
trr
ta
tb
40
30
20
10
025 50 75 100 125 150 175
TC, CASE TEMPERATE (oC)
DC
SQ. WAVE
IF(AV), AVERAGE FORWARD CURRENT (A)
Test Circuits and Waveforms
FIGURE 5. t
rr
TEST CIRCUIT FIGURE 6. t
rr
WAVEFORMS AND DEFINITIONS
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE
t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IF
trr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE
+
LR
VDD
R < 0.1
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
IMAX = 1.225A
L = 40mH
IV
t0t1t2
IL
VAVL
t
IL
RHRG30120CC
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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