Infineon SIPMOS Power Transistor *N channel * Enhancement mode * Avalanche-rated BUZ 32 SMD 2 (tab) 3 Pin 1 Pin 2 Pin 3 G D S Type Vos Ip Rosion) Package Ordering Code BUZ32SMD /|200V 9.5A 0.40 DPAK Q67042-S4133 Maximum Ratings Parameter Symbol Values Unit Continuous drain current Ip A To = 29C 9.5 Pulsed drain current IDpuls To = 25 C 38 Avalanche current,limited by Tjmax lar 9.5 Avalanche energy, periodic limited by Timax Ear 6.5 mJ Avalanche energy, single pulse Ens Ip = 9.5 A, Vop = 50 V, Reg = 252 L=2mH, 7)= 25C 120 Gate source voltage Ves +20 Vv Power dissipation Prot Ww To = 25C 75 Operating temperature T -55 ... + 150 Cc Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case Rihic < 1.67 K/W Thermal resistance, chip to ambient Rina 15 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150/56 Data Sheet 05.99Infineon BUZ 32 SMD Electrical Characteristics, at 7|= 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VBR)DSs Vv Ves = OV, Ip = 0.25 mA, Tj = 25 C 200 - - Gate threshold voltage Vesith) Ves=Vps, lb =1mA 2.1 3 4 Zero gate voltage drain current loss pA Vos = 200 V, Veg = OV, T)= 25C - 0.1 1 Vos = 200 V, Veg = OV, T)= 125C - 10 100 Gate-source leakage current less nA Ves = 20 V, Vps =0V - 10 100 Drain-Source on-resistance Rpsion) Q Veg =10V, Ip=6A - 0.3 0.4 Data Sheet 2 05.99Infineon BUZ 32 SMD Electrical Characteristics, at 7; = 25C, unless otherwise specified Parameter Symbol Values Unit typ. max. Dynamic Characteristics Transconductance Vos? 2 + Ip + Rosion)max, 'p = 6A 4.6 Input capacitance Ves =0 V, Vos =25 V, f=1MHz 400 530 Output capacitance Ves = 0 V, Vos = 25 V, f= 1 MHz 85 130 Reverse transfer capacitance Ves =0 Vv, Vos =25 V, f=1MHz 45 70 pF Turn-on delay time Vop = 30 V, Ves= 10V, ID=3A Res =500 10 15 Rise time Vop = 30 V, Ves = 10V, IDb=3A Res =500 40 60 Turn-off delay time Vop = 30 V, Ves= 10V, ID=3A Res = $0 Q La(off) 55 75 Fall time Vop = 30 V, Vag =10V, b=3A Res = 50 Q 30 40 ns Data Sheet 05.99Infineon BUZ 32 SMD Electrical Characteristics, at 7) = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current Is A To = 25C - : 9.5 Inverse diode direct current,pulsed Iu To = 25C - - 38 Inverse diode forward voltage Vsp Vv Veg = OV, Ip =19A - 1.4 17 Reverse recovery time be ns Ve = 100 V, Ip=lg di/dt= 100 A/us : 200 . Reverse recovery charge On pC Va = 100 V, Ip=lg dig/dt= 100 A/us - 0.6 - Data Sheet 4 05.99Infineon Power dissipation Prot = S(T) Oo 20 40 60 80 100 120 C_ 160 r T, Safe operating area Ip = f(Vps) parameter: D= 0.01, Tg = 25C 102 10 10-1 10 Data Sheet BUZ 32 SMD Drain current lp = (To) parameter: Veg 210 V 10 A N N\ ly 8 N tf? 6 \ N : \ 0 0 20 40 60 80 100 120 C 160 T, Transient thermal impedance Zthuc = fi (tp) parameter: D =t,/ T 101 K/W thc 10 10-1 102 103 0 10 10 10 10 10 10 10's 10 oe 05.99Infineon BUZ 32 SMD Typ. output characteristics Ip = {(Vps) parameter: f, = 80 us 22 A 18 A 6 14 12 10 0 2 4 6 8 0 122 V 6 > Vos Typ. transfer characteristics /, = f( Ves) parameter: t, = 80 us Vps22 x Ip x Roson)max 13; ~ A 11 5 40 _ ro] o _| o & mon ws o 1 2 3 4 5 6 7 8 V 10 Ves Data Sheet Typ. drain-source on-resistance Ros (on) = S(lp) parameter: Ves 1.3 Q 1.41 Ros (on) 1.0 A 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 a b def gih ijk O17 45 50 55 60 6570 75 80 90 100 200 0.0 pg) 0 4 8 12 16 A 22 ly Typ. forward transconductance g,. = f (/p) parameter: t, = 80 us, Vps22 x Ip x Rosion)max 6.0; Ss 5.0 45 YA 4.0 ff 3.5 V 3.0 7 2.5 / 2.0 / 1.5 / 1.0 | 0.0 | 0 2 4 6 8 A 12 _ # 05.99Infineon BUZ 32 SMD Drain-source on-resistance Rps (ony = S(7}) parameter: Ip =6 A, Veg = 10 V 1.3 Q 11 Ros fon) 1.0 I 0.9 0.8 0.7 0.6 0.5 04 0.3 0.2 0.1 0.0 -60 -20 20 60 100 C 160 Typ. capacitances C= f(Vps) parameter: Vag = OV, f= 1MHz 101 nF 10 10+ 102 Data Sheet Gate threshold voltage Ves (th) = /(7}) parameter: Ves = Vos, Ip = 1 MA 4.6 V 4.0 Vesan) 3.6 1 3.2 2.8 2.4 2.0 16 1.2 08 04 0.0 -60 -20 20 60 100 6C eh 160 Forward characteristics of reverse diode le = S(Vgp) parameter: 7, f, = 80 us 102 A I 1 10! 10 T,= 25C typ T,= 150 C typ T, = 25 C (98%) T, = 150 C (98%) 10-1 0.0 O04 08 12 16 20 24 V 30 & Vsp 05.99Infineon BUZ 32 SMD Avalanche energy Ens = S(7)) parameter: Ip = 9.5 A, Vpp = 50 V Reg = 252, L = 2mH 20 = =40 Drain-source breakdown voltage Vipryoss = S(7}) Vv 230 eros, 1 220 195 190 185 180 Data Sheet 60 80 100 120 C 160 Typ. gate charge Ves = S(Qcate) parameter: Ip puis = 14 A 16 0 0 4 8 12 16 20 24 28 32 nC 38 : Qcate 05.99