VN0610LL, VN10LM
N-Channel Enhancement-Mode
MOS Transistors
VN0610LL / VN10LM
FEATURES
••Low rDS(on) <5Ω
APPLICATIONS
••Switching
••Amplification
ORDERING INFORMATION
Part Package Temperature Range
VN0610LL Plastic TO -92 -55oC to +150oC
VN10LM Plastic TO-2 37 -55oC to +150oC
For sort ed ch ips in carrier s se e 2N7000
CORPORATION
PIN CONNECTI O NS
ABSOLUTE M AXIM UM R A T INGS (TA = 2 5oC unles s other wise noted )
SYMBOL PARAMET ERS/TEST CONDITIONS LIMITS UNITS
VN0610LL VN10LM
VDS Drain-Source Voltage 60 60 V
VGS Gate-Source Voltage ±30 ±30
IDContinuous Drain Current TA = 25oC 0.28 0.32
A
TA = 100oC 0.17 0.2
IDM Pulsed Drain Current11.3 1.4
PDPower Dissipatio n TA = 25oC 0.8 1.0 W
TA = 100oC 0.32 0.4
TJ, Tstg Operating Ju nction & Storage Tem perature Range -55 to 150 oC
TLLead Temperature (1/16" from case for 10 sec.) 300
THERMA L RESISTANCE R ATI NG S
SYMBOL THERMAL RESISTANCE LIMITS UNITS
VN0610LL VN10LM
RthJA Junction-to-Ambient 156 125 K/W
1Pul se width lim ite d by maxim um ju nctio n tem p era ture .
TO-237
TO-92
(TO-226AA)
321
BOTTOM VIEW
1. SOURCE
2. GATE
3. DRAIN
321
BOTTOM VIEW
1. SOURCE
2. GATE
3. TAB-DRAIN
3
2
1
CD5
VN0610LL / VN10LM
CORPORATION
SPECIFICATIONSaLIMITS
SYMBOL PARAMETER TYPbMIN MAX UNIT TEST CONDITIONS
STATIC
V(BR)DSS Drain-Source Breakdown Voltage 70 60 VID = 100µA, VGS = 0V
VGS(th) Gate-Th resho ld Vol tage 2.3 0.8 2.5 VDS = VGS, ID = 1mA
IGSS Gate-Body Le akag e ±100 nA VGS = ±30V, VDS = 0V
IDSS Zero Gate Vol tage Drain Curren t 10 µAVDS = 50V, VGS = 0V
500 TJ = 125oC
ID(ON) On-State Drain Currentd1000 750 mA VDS = 10V, VGS = 10V
rDS(ON) Drain-Source On-Resistancec57.5
Ω
VGS = 5V, ID = 0.2A
2.5 5 VGS = 10V, ID = 0.5A
4.4 9 TJ = 125oC
gFS Forward Transconduct ancec230 100 mS VDS = 10V, ID = 0.5A
gOS Common Source Output Conductancec500 µSV
DS = 5V, ID = 50mA
DYNAMIC
Ciss Input Capacitance 16 60
pF VDS = 25V, VGS = 0V, f = 1MHz
Coss Output Capacitance 11 25
Crss Reverse Transfer Capacitance 2 5
SWITCHING
tON Turn-On Time 7 10 ns
VDD = 15V, RL = 23Ω, ID = 0.6A
VGEN = 10V, RG = 25Ω
tOFF Turn-Off Time 7 10 (Switching time is essentially independent of
operating tem p era ture )
Notes:
a. TA = 25oC unless otherwis e not ed.
b. For design aid only, not subject to production testing.
c. Pulse test; PW = ≤300µS, dut y cycle ≤2%.
d. Pulse width limited by maximum junction temperature.
