JAN1N5617 - MICROSEMI - searchdatasheet.com

VOIDLESS-HERMETICALLY SEALED

FAST RECOVERY GLASS RECTIFIERS

Microsemi

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Page 1

1-15-2007 REV D

WWW.Microsemi .COM

SCOTTSDALE DIVISION

1N5615 thru 1N5623

1N5615 – 1N5623

DESCRIPTION APPEARANCE

This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/429

and is ideal for high-reliability applications where a failure cannot be tolerated.

These industry-recognized 1.0 Amp rated rectifiers for working peak reverse

voltages from 200 to 1000 volts are hermetically sealed with voidless-glass

construction using an internal “Category I” metallurgical bond. These devices are

also available in surface mount MELF package configurations by adding a “US”

suffix (see separate data sheet for 1N5615US thru 1N5623US). Microsemi also

offers numerous other rectifier products to meet higher and lower current ratings

with various recovery time speed requirements including fast and ultrafast device

types in both through-hole a nd surface mount packages.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES APPLICATIONS / BENEFITS

• Popular JEDEC registered 1N5615 to 1N5623 series

• Voidless hermetically s ealed glass package

• Triple-Layer Passivation

• Internal “Category I” Metallurgical bonds

• Working Peak Reverse Voltage 200 to 1000 Volts.

• JAN, JANTX, JANTXV, and JANS available per MIL-

PRF-19500/429

• Surface mount equivalents also available in a square

end-cap MELF configuration with “US” suffix (see

separate data sheet for 1N5615US thru 1N5623US)

• Fast recovery 1 Amp rectifiers 200 to 1000 V

• Military and other high-reliability appl ications

• General rectifier applications inclu din g bridges, half-

bridges, catch diodes, etc.

• High forward surge current capability

• Extremely robust construction

• Low thermal resistance

• Controlled avalanche with peak reverse power

capability

• Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RATINGS MECHANICAL AND PACKAGING

• Junction & Storage Temperature: -65oC to +175oC

• Thermal Resistance: 38oC/W junction to lead at 3/8

inch (10 mm) lead length from body

• Thermal Impedance: 4.5oC/W @ 10 ms heating time

• Average Rectified For ward Current (IO): 1.0 Amps @

TA = 55ºC

• Forward Surge Current: 30 Amps @ 8.3 ms half-sine

• Solder Temperatures: 260ºC for 10 s (maximum)

• CASE: Hermetically sealed voidless hard glass with

Tungsten slugs (package dim ensions on last page)

• TERMINATIONS: Axial leads are copper with

Tin/Lead (Sn/Pb) finish. Note: Previous inventory

had solid Silver axial-l eads and no finish.

• MARKING: Body paint and part number, etc.

• POLARITY: Cathode band

• TAPE & REEL option: Standard per EIA-296

• WEIGHT: 340 mg

ELECTRICAL CHARACTERISTICS

TYPE

WORKING

PEAK

REVERSE

VOLTAGE

VRWM

MINIMUM

BREAKDOWN

VOLTAGE

VBR @ 50μA

AVERAGE

RECTIFIED

CURRENT

IO @ TA

(NOTE 1)

FORWAR

VOLTAGE

(MAX.)

VF @ 3A

REVERSE

CURRENT

(MAX.)

IR @ VRWM

CAPACITANCE

(MAX.)

C @ VR =12 V

f=1 MHz

MAXIMUM

SURGE

CURRENT

IFSM

(NOTE 2)

REVERSE

RECOVERY

(MAX.)

(NOTE 3)

trr

VOLTS VOLTS AMPS VOLTS μA pF AMPS ns

50oC 100oC 25oC 100oC

1N5615

1N5617

1N5619

1N5621

1N5623

200

400

600

800

1000

220

440

660

880

1100

1.00

.750

.8 MIN.

1.6

MAX.

150

250

300

500

NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC,

derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal

resistance from mounting point to ambient is sufficiently controll ed where TJ(max) does not exceed 175 oC.

NOTE 2: TA = 100 oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals

NOTE 3: IF = 0.5 A, IRM = 1 A, IR(REC) = 0.250 A

“A” Package

VOIDLESS-HERMETICALLY SEALED

FAST RECOVERY GLASS RECTIFIERS

Microsemi

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Page 2

1-15-2007 REV D

WWW.Microsemi .COM

SCOTTSDALE DIVISION

1N5615 thru 1N5623

1N5615 – 1N5623

SYMBOLS & DEFINITI ONS

Symbol Definition

VBR Minimum Breakdown Voltage: T he minimum voltage the device will exhibit at a specified current

VRWM Working Peak Reverse Voltage: The maximum peak vo ltage that can be applied over the operatin g

temperature range

IO Average Rectified Output Current: Output Current averaged over a full cycle with a 50 hZ or 60 Hz sine-wave

input and a 180 degree co nduction angle

VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current

IR Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and

temperature

C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage

trr Reverse Recovery Time: The time interval between the instant the current passes through zero when

changing from the forward direction to the reverse direction and a specified decay point after a peak reverse

current occurs.

GRAPHS

FIGURE 1 FIGURE 2

MAXIMUM CURRENT vs LEAD TEMPERATURE TYPICAL REVERSE CURRENT vs PIV