5S6E D MM 7929237 0041541 144 MBSGTH (7 SGS-THOMSON 1N 4728 A>1N 4764 A 7 WickoevecrRomies 1N 4187 B>1N 4193 B le ZENER DIODES 8S G X-THOMSON a LARGE VOLTAGE RANGE : 3.3V TO 200V = DOUBLE SLUG TYPE CONSTRUCTION ee a _ oe BO 41 DESCRIPTION (Glass) 1W hermetically sealed glass silicon Zener diodes. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit Prot Power Dissipation* Tamo = 50C 1 Ww izm Continuous Reverse Current Tamp = 50C See page 2 mA Izsm Peak Reverse Current Tamb = 25C See page 2 mA Tstg Storage and Junction Temperature Range 65 to 200 C y TL Maximum Lead Temperature for Soldering during 230 C 10s at 4mm from Case THERMAL RESISTANCE Symbol Parameter Value Unit Rth yay | Junctlonambient" 150 C/W * On infinite heatsink with 4mm lead jength July 1989 1/4 57SbE D MM 7929237 OO81S4e O10 MESGTH 1N 4728 A _ 1N 4764 A/1N 4187 B > 1N 4193 B ELECTRICAL CHARACTERISTICS (Tamp = 25C unless otherwise specified) Types Varilzt* | rzr/lzt* lzr* rzx/lzK x Vz laiVa Vr 2m Izsu** Ta mb nom max max typ max s0c (V) (Q) (mA) (Q} (mA) | (10 47C) (nA) (Vv) (mA) (mA) P iN 4728 A 39 10 76 400 1 -6 100 10 276 2381 iN 4729 A 3,6 10 69 400 1 -6 100 10 252 2193 P 1N 47304 3,9 9 64 400 1 -5 50 10 234 2033 1N 47314 4,3 9 58 400 1 -3 10 10 217 1812 P 1N4732A 47 8 53 500 1 -1 10 10 193 1667 P 1N 4733 A 5,1 7 49 50 1 1 10 10 178 1543 P 1N 47344 5.6 5 45 600 1 3 10 20 162 1389 P 1N 5135B 6,2 2 44 700 1 4 10 3.0 146 1263 P 1N 4736 A 6,8 35 37 700 14 5 10 4.0 133 1157 P 1N 4737 A 7,5 4 34 700 O85 5 10 5.0 121 1055 P 1N 4738 A 8,2 45 31 700 O85 6 10 6.0 110 958 P 1N 4739 A 9,1 5 28 700 O05 6 10 70 100 868 P 1N 4740 A 10 7 26 700 025 7 10 76 91 786 IN 4741 A 11 8 23 700 025 7 5 84 83 718 P 1N 4742 A 12 9 21 700 0.25 7 5 91 76 656 IN 4743 A 13 10 19 700 0.25 7 5 99 69 591 P iN 4744 A 15 14 17 700 0.25 8 5 114 61 34 P 1N 4745A 16 16 155 700 025 8 5 122 67 487 P 1N 4746 A 18 20 14 750 025 8 5 137 50 436 P 1N 4747A 20 22 125 750 025 8 5 152 45 393 P IN 4748 A 22 23 115 750 025 8 5 167 41 358 P iN 4749 A 24 25 105 750 025 8 5 162 38 326 P iN 4750 A 27 35 95 750 025 9 5 206 34 288 P iN 4751A 30 40 85 1000 025 9 5 228 30 260 P 1N 4752 A 33 45 75 1000 025 9 5 251 27 238 P 1N 4753 A 36 50 70 1000 025 9 5 274 25 219 IN 4754 A 39 60 65 1000 025 9 5 297 23 203 IN 4755 A 43 70 60 1500 025 9 5 327 22 181 1N 4756 A 47 80 55 1500 025 9 5 358 19 167 1N 4757 A 51 95 50 1500 025 9 5 388 18 154 1N 4758 A 56 110 45 2000 025 9 5 426 16 139 P 1N 4759 A 62 125 40 2000 025 9 5 47 4 14 126 1N 4760 A 68 4150 37 2000 025 9 5 517 13 116 1N 4761 A 75 175 33 2000 025 9 5 56 12 4104 1N 4762 A 82 200 30 3000 025 9 5 622 W 96 IN 4763 A 91 250 28 3000 025 9 5 692 10 87 1N 47644 100 350 25 3000 025 9 5 76 9 79 IN 4187 B 110 450 23 4000 025 10 5 8365 86 72 iN 4188 B 420 550 20 4500 025 10 5 912 78 66 1N 4189 B 130 700 19 5000 025 10 5 988 7 59 1N 4190 B 150 1000 17? 6000 025 10 5 114 64 53 1N 4191 B 160 1100 16 6500 0.25 10 5 1216 68 49 IN 4192 B 180 1200 14 7000 0.25 10 5 136 8 62 44 1N 4193 B 200 1500 12 g000 0.25 10 5 152 47 39 Measure under thermal equilibrium and DC current test conditions ** Rectangular waveform (tp = 10ms) Tolerance on nominal Vzt value + 5% P Preferred voltages Tight tolerances on preferred voltages 1N47 C +2%-1N47 D 41% Forward voltage drop Ve < 1.2V (Tamp = 25 C, Ir = 0 2A) S G S-THOMSON 2/4 {a7 SGS-THOMSON T SoS oo 585bE 0D MM 7929237 0041543 TS? MBSGTH 1N 4728 A 1N 4764 A/1N 4187 B 1N 4193 B S G S-THOMSON (C/W) 200 150 4100 50 Tamb {C) 0 0 50 100 150 200 5 - 40 15 20 25 Fig.4 - Power dissipation versus ambient Fig.2 - Therma] resistance versus temperature on infinite heatsink. lead length on infinite heatsink. Zz (x soo th INFINITE HEATSINK L 50 Test point of tconnexion t {s) 0 40-3 40-2 tg 4 10 102 Fig.3 - Transient thermal impedance junction-ambient versus pulse duration. C (pF) 3 4 10 10 V7 <5.8V -- Vz7 25.8 A 402 iy IN ase. 4754 a 4758 io-2 4 N 8 10 V_ lV) Vem (V) 4073 1 40 100 500 0.7 0.8 0.9 i 4.4 4.2 Fig.4 - Capacitance versus reverse Fig. - Peak forward current applied voltage. versus peak forward voltage drap (typical values) . GG SCS-THOMSON 34 Tf iaicromectronics 59S5bE D MM 792923? 0041544 993 MMSGTH 1N 4728 A 1N 4764 A/1N 4187 B 1N 4193 B 8S G S-THOMSON Rzt (a) Ip {ma) 103 Tj = 150 C Vp = 0.75 Voy 102 10 Vzr () Vzt W) 4 40 402 4 40 102 Fig.6 - Reverse current versus regulation Fig.7 - Differential resistance versus voltage {maximum values) . regulation voltage {maximum values) . 103 Tj initial = 25 ec 4102 tp {ms) 407 4 410 4102 Fig.B ~ Peak pulse power versus pulse duration (rectangular wave form) . PACKAGE MECHANICAL DATA DO 41 Glass 28 min. 4,07 28 min. @ 2,04 i tng my 5,20 271 @ 0,712 @ 0,712 0,863 0,863 Cooling method by convection and conduction Marking clear, ring at cathode end Weight 0 34g 4/4 k SGS-THOMSON IF inchorecrnomes 60