BC856S ... BC858S PNP General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage PNP Version 2004-04-09 Dimensions / Mae in mm 20.1 5 2 2.1 Type Code 1 Plastic case Kunststoffgehause SOT-363 5 = B2 2 = B1 Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert 3 2.4 6 = C1 1 = E1 310 mW 4 0.1 6 0.90.1 6.5 1.250.1 6.5 Power dissipation - Verlustleistung 4 = E2 3 = C2 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BC856S BC857S BC858S Collector-Emitter-voltage B open - VCE0 65 V 45 V 30 V Collector-Base-voltage E open - VCB0 80 V 50 V 30 V Emitter-Base-voltage C open - VEB0 5V Power dissipation - Verlustleistung Ptot 310 mW 1) Collector current - Kollektorstrom (dc) - IC 100 mA Peak Collector current - Kollektor-Spitzenstrom - ICM 200 mA Peak Base current - Basis-Spitzenstrom - IBM 200 mA Peak Emitter current - Emitter-Spitzenstrom IEM 200 mA Junction temperature - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 65...+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) 2 DC current gain - Kollektor-Basis-Stromverhaltnis ) - VCE = 5 V, - IC = 10 :A - VCE = 5 V, - IC = 2 mA hFE hFE typ. 90 ... 270 110 ... 800 Small signal current gain Kleinsignal-Stromverstarkung hfe typ. 220 ... 600 Input impedance - Eingangs-Impedanz hie 1.6 ... 15 kS Output admittance - Ausgangs-Leitwert hoe 18 ... 110 :S Reverse voltage transfer ratio Spannungsruckwirkung hre typ.1.5 ... 3 *10-4 h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 18 General Purpose Transistors BC856S ... BC858S Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. - - 90 mV 200 mV 250 mV 600 mV - - 700 mV 900 mV - - 600 mV - 650 mV - 750 mV 820 mV - ICB0 - ICB0 - - - - 15 nA 5 :A - IEB0 - - 100 nA 100 MHz - - CCB0 - - 6 pF F - 2 dB 10 dB 1 Collector saturation volt. - Kollektor-Sattigungsspag. ) -VCEsat -VCEsat - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base saturation voltage - Basis-Sattigungsspannung 1) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA - VBEsat - VBEsat Base-Emitter voltage - Basis-Emitter-Spannung 1) - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 10 mA - VBEon - VBEon Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 30 V IE = 0, - VCB = 30 V, Tj = 150/C Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 5 V Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz fT Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE = ie = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 200 :A RG = 2 kS, f = 1 kHz, )f = 200 Hz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren 420 K/W 2) BC846S ... BC848S Pinning - Anschlubelegung 6 5 4 T2 T1 1 1 2 2 3 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 19