BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT223 package which is designed for medium power surface mount applications. *High Current: 1.5 Amps *NPN Complement is BCP56 *The SOT223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die *Device Marking: BCP53T1 = AH BCP53-10T1 = AH-10 BCP53-16T1 = AH-16 *Pb-Free Packages are Available http://onsemi.com MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit CollectorEmitter Voltage VCEO -80 Vdc CollectorBase Voltage VCBO -100 Vdc EmitterBase Voltage VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1.) Derate above 25C PD Operating and Storage Temperature Range TJ, Tstg 1 1.5 12 Watts mW/C -65 to +150 C Thermal Resistance, Junction to Ambient (surface mounted) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath 2 MARKING DIAGRAM AYW XXXXXG G 3 SOT-223 CASE 318E STYLE 1 1 A Y W XXXXX G = Assembly Location = Year = Work Week = Specific Device Code = Pb-Free Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS Characteristic 4 Symbol Max Unit RJA 83.3 C/W TL C Sec 260 10 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. ORDERING INFORMATION Device Package Shipping BCP53T1 SOT-223 1000/Tape & Reel BCP53T1G SOT-223 (Pb-Free) 1000/Tape & Reel BCP53-10T1 SOT-223 1000/Tape & Reel BCP53-10T1G SOT-223 (Pb-Free) 1000/Tape & Reel BCP53-16T1 SOT-223 1000/Tape & Reel BCP53-16T1G SOT-223 (Pb-Free) 1000/Tape & Reel BCP53-16T3 SOT-223 4000/Tape & Reel BCP53-16T3G SOT-223 (Pb-Free) 4000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2008 February, 2008 - Rev. 6 1 Publication Order Number: BCP53T1/D BCP53 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit CollectorBase Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CBO -100 - - Vdc CollectorEmitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V(BR)CEO -80 - - Vdc CollectorEmitter Breakdown Voltage (IC = -100 Adc, RBE = 1.0 kohm) V(BR)CER -100 - - Vdc EmitterBase Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO -5.0 - - Vdc CollectorBase Cutoff Current (VCB = -30 Vdc, IE = 0) ICBO - - -100 nAdc EmitterBase Cutoff Current (VEB = -5.0 Vdc, IC = 0) IEBO - - -10 Adc DC Current Gain (IC = -5.0 mAdc, VCE = -2.0 Vdc) All Part Types (IC = -150 mAdc, VCE = -2.0 Vdc) BCP53 BCP53-10 BCP53-16 (IC = -500 mAdc, VCE = -2.0 Vdc) All Part Types hFE 25 40 63 100 25 - 250 160 250 - - CollectorEmitter Saturation Voltage (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) - - -0.5 Vdc BaseEmitter On Voltage (IC = -500 mAdc, VCE = -2.0 Vdc) VBE(on) - - -1.0 Vdc fT - 50 - MHz Characteristics OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS CurrentGain - Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc, f = 35 MHz) http://onsemi.com 2 BCP53 Series TYPICAL CHARACTERISTICS IC/IB = 10 200 BCP53, -10, -16 +150C 1.6 150C, 5 V 180 1.8 1.4 hFE, DC CURRENT GAIN Vce(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 2.0 -55C 1.2 1.0 +25C 0.8 0.6 0.4 150C, 2 V 160 140 25C, 5 V 120 25C, 2 V 100 80 -55C, 5 V 60 -55C, 2 V 40 20 0 0.2 0 0.001 0.01 0.1 1 10 0.001 0.01 IC, COLLECTOR CURRENT (mA) 300 150C, 5 V 150C, 5 V 150C, 2 V 100 25C, 2 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 160 25C, 5 V 80 60 -55C, 5 V 40 -55C, 2 V 10 Figure 2. DC Current Gain vs. Collector Current (BCP53) 180 120 1 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 140 0.1 250 150C, 2 V 200 25C, 5 V 150 25C, 2 V 100 -55C, 5 V -55C, 2 V 50 20 0 0 0.001 0.1 1 10 0.001 1 Figure 3. DC Current Gain vs. Collector Current (BCP53-10) Figure 4. DC Current Gain vs. Collector Current (BCP53-16) IC/IB = 10 10 1.2 BCP53, -10 IC/IB = 10 1.0 0.9 -55C 0.8 0.7 +25C 0.5 0.4 0.1 IC, COLLECTOR CURRENT (A) 1.1 0.6 0.01 IC, COLLECTOR CURRENT (A) Vbe(sat), BASE EMITTER SATURATION VOLTAGE (V) Vbe(sat), BASE EMITTER SATURATION VOLTAGE (V) 1.2 0.01 BCP53 -16 1.1 1.0 0.9 -55C 0.8 0.7 +25C 0.6 0.5 +150C 0.001 +150C 0.4 0.01 0.1 1 10 0.001 IC, COLLECTOR CURRENT (A) 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 5. BCP53, -10 Base Emitter Saturation Voltage vs. Collector Current Figure 6. BCP53-16 Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 3 10 BCP53 Series TYPICAL CHARACTERISTICS 1.2 1.0 0.9 -55C 0.8 0.7 +25C 0.6 0.5 0.4 0.9 0.01 0.1 1 0.9 -55C 0.8 0.7 +25C 0.6 0.5 +150C 0.4 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 7. BCP53, -10 Base Emitter Turn-On Voltage vs. Collector Current VBE(on) Figure 8. BCP53-16 Base Emitter Turn-On Voltage vs. Collector Current BCP53, -10, -16 IC = 1.0 A 110 IC = 1.5 A BCP53-10 100 0.8 CAPACITANCE (pF) IC = 500 mA 0.7 0.6 IC = 100 mA 0.5 0.4 0.3 90 BCP53 80 70 60 BCP53-16 0.2 50 0.1 0 40 0.001 0.01 0.1 1 0 1 2 4 VOLTAGE (V) Figure 9. BCP53, -10, -16 Saturation Region Figure 10. Input Capacitance Ic, COLLECTOR CURRENT (A) 10 20 BCP53-10 15 BCP53 10 BCP53-16 5 3 Ib, BASE CURRENT (A) 25 CAPACITANCE (pF) 1.0 0.3 0.2 +150C 0.001 1.0 BCP53 -16 Vce = 2 V 1.1 1.1 0.3 Vce, COLLECTOR-EMITTER VOLTAGE (V) BCP53, -10 Vce = 2 V Vbe(sat), BASE EMITTER SATURATION VOLTAGE (V) Vbe(on), BASE EMITTER TURN-ON VOLTAGE (V) 1.2 0 5 100 ms 10 ms 1s 1 ms 1 CONTINUOUS THERMAL LIMIT 0.1 SINGLE PULSE TEST AT Tamb = 25C 0.01 0 2 4 6 8 10 12 14 16 18 20 0.1 1 10 VOLTAGE (V) Vce, COLLECTOR EMITTER VOLTAGE (V) Figure 11. Output Capacitance Figure 12. Standard Operating Area http://onsemi.com 4 100 BCP53 Series PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D b1 4 HE DIM A A1 b b1 c D E e e1 L1 HE E 1 2 3 b e1 e 0.08 (0003) C q A A1 q STYLE 1: PIN 1. 2. 3. 4. L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10 BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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