© Semiconductor Components Industries, LLC, 2008
February, 2008 - Rev. 6
1Publication Order Number:
BCP53T1/D
BCP53 Series
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT‐223 package
which is designed for medium power surface mount applications.
High Current: 1.5 Amps
NPN Complement is BCP56
The SOT‐223 Package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
Device Marking:
BCP53T1 = AH
BCP53-10T1 = AH-10
BCP53-16T1 = AH-16
Pb-Free Packages are Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector‐Emitter Voltage VCEO -80 Vdc
Collector‐Base Voltage VCBO -100 Vdc
Emitter‐Base Voltage VEBO -5.0 Vdc
Collector Current IC1.5 Adc
Total Power Dissipation
@ TA = 25°C (Note 1.)
Derate above 25°C
PD
1.5
12
Watts
mW/°C
Operating and Storage
Temperature Range
TJ, Tstg -65 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction to Ambient
(surface mounted)
RθJA 83.3 °C/W
Lead Temperature for Soldering,
0.0625 from case
Time in Solder Bath
TL
260
10
°C
Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Device Package Shipping
ORDERING INFORMATION
BCP53T1 SOT-223
SOT-223
CASE 318E
STYLE 1
1000/Tape & Reel
MEDIUM POWER HIGH
CURRENT SURFACE MOUNT
PNP TRANSISTORS
123
4
COLLECTOR 2,4
BASE
1
EMITTER 3
BCP53-10T1 SOT-223 1000/Tape & Reel
MARKING DIAGRAM
BCP53-16T1 SOT-223 1000/Tape & Reel
BCP53T1G SOT-223
(Pb-Free)
1000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
BCP53-16T3 SOT-223 4000/Tape & Reel
BCP53-16T1G SOT-223
(Pb-Free)
1000/Tape & Reel
BCP53-10T1G SOT-223
(Pb-Free)
1000/Tape & Reel
BCP53-16T3G SOT-223
(Pb-Free)
4000/Tape & Reel
1
A = Assembly Location
Y = Year
W = Work Week
XXXXX = Specific Device Code
G= Pb-Free Package
AYW
XXXXXG
G
(Note: Microdot may be in either location)
BCP53 Series
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector‐Base Breakdown Voltage (IC = -100 μAdc, IE = 0) V(BR)CBO -100 - - Vdc
Collector‐Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V(BR)CEO -80 - - Vdc
Collector‐Emitter Breakdown Voltage (IC = -100 μAdc, RBE = 1.0 kohm) V(BR)CER -100 - - Vdc
Emitter‐Base Breakdown Voltage (IE = -10 μAdc, IC = 0) V(BR)EBO -5.0 - - Vdc
Collector‐Base Cutoff Current (VCB = -30 Vdc, IE = 0) ICBO - - -100 nAdc
Emitter‐Base Cutoff Current (VEB = -5.0 Vdc, IC = 0) IEBO - - -10 μAdc
ON CHARACTERISTICS
DC Current Gain (IC = -5.0 mAdc, VCE = -2.0 Vdc) All Part Types
(IC = -150 mAdc, VCE = -2.0 Vdc) BCP53
BCP53-10
BCP53-16
(IC = -500 mAdc, VCE = -2.0 Vdc) All Part Types
hFE 25
40
63
100
25
-
-
-
-
-
-
250
160
250
-
-
Collector‐Emitter Saturation Voltage (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) - - -0.5 Vdc
Base‐Emitter On Voltage (IC = -500 mAdc, VCE = -2.0 Vdc) VBE(on) - - -1.0 Vdc
DYNAMIC CHARACTERISTICS
Current‐Gain - Bandwidth Product
(IC = -10 mAdc, VCE = -5.0 Vdc, f = 35 MHz)
fT- 50 - MHz
BCP53 Series
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3
TYPICAL CHARACTERISTICS
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. DC Current Gain vs. Collector
Current (BCP53)
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (A)
1010.10.010.001
0
0.2
0.6
0.8
1.0
1.4
1.8
2.0
Figure 3. DC Current Gain vs. Collector
Current (BCP53-10)
Figure 4. DC Current Gain vs. Collector
Current (BCP53-16)
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 5. BCP53, -10 Base Emitter Saturation
Voltage vs. Collector Current
Figure 6. BCP53-16 Base Emitter Saturation
Voltage vs. Collector Current
IC, COLLECTOR CURRENT (A)
Vce(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
Vbe(sat), BASE EMITTER
SATURATION VOLTAGE (V)
0.4
1.2
1.6
IC/IB = 10 BCP53, -10, -16
+150°C
+25°C
-55°C
1010.10.010.001
0
20
60
80
100
140
180
200
40
120
160
150°C, 5 V
150°C, 2 V
25°C, 5 V
25°C, 2 V
-55°C, 5 V
-55°C, 2 V
1010.10.010.001
0
20
60
80
100
140
180
40
120
160
150°C, 5 V
150°C, 2 V
25°C, 5 V
25°C, 2 V
-55°C, 5 V
-55°C, 2 V
1010.10.010.001
0
100
150
200
300
50
250
150°C, 5 V
150°C, 2 V
25°C, 5 V
25°C, 2 V
-55°C, 5 V
-55°C, 2 V
1010.10.010.001
0.4
0.6
0.7
0.8
0.9
1.1
1.2
0.5
1.0
IC/IB = 10 BCP53, -10
+150°C
+25°C
-55°C
IC, COLLECTOR CURRENT (A)
Vbe(sat), BASE EMITTER
SATURATION VOLTAGE (V)
1010.10.010.001
0.4
0.6
0.7
0.8
0.9
1.1
1.2
0.5
1.0
IC/IB = 10 BCP53 -16
+150°C
+25°C
-55°C
BCP53 Series
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4
TYPICAL CHARACTERISTICS
Figure 7. BCP53, -10 Base Emitter Turn-On
Voltage vs. Collector Current VBE(on)
Figure 8. BCP53-16 Base Emitter Turn-On
Voltage vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
1010.10.010.001
0.3
0.4
0.5
0.6
0.7
0.9
1.1
1.2
1010.10.010.001
0.2
0.5
0.6
0.7
0.8
0.9
1.0
1.2
Figure 9. BCP53, -10, -16 Saturation Region Figure 10. Input Capacitance
Ib, BASE CURRENT (A) VOLTAGE (V)
10.10.010.001
0
0.1
0.2
0.3
0.4
0.5
0.6
1.0
543210
40
50
60
70
80
90
100
110
Figure 11. Output Capacitance Figure 12. Standard Operating Area
VOLTAGE (V) Vce, COLLECTOR EMITTER VOLTAGE (V)
20141086420
0
5
10
15
20
25
1001010.1
0.01
0.1
1
10
Vbe(on), BASE EMITTER TURN-ON
VOLTAGE (V)
Vbe(sat), BASE EMITTER
SATURATION VOLTAGE (V)
Vce, COLLECTOR-EMITTER VOLTAGE (V)
CAPACITANCE (pF)
CAPACITANCE (pF)
Ic, COLLECTOR CURRENT (A)
0.8
1.0
1.1
Vce = 2 V BCP53, -10
+150°C
+25°C
-55°C
Vce = 2 V BCP53 -16
+150°C
+25°C
-55°C
0.7
0.8
0.9 BCP53, -10, -16
IC = 100 mA
IC = 500 mA
IC = 1.5 AIC = 1.0 A BCP53-10
BCP53
BCP53-16
12 16 18
BCP53-10
BCP53
BCP53-16
SINGLE PULSE TEST AT Tamb = 25°C
CONTINUOUS THERMAL LIMIT
100 ms 10 ms
1 ms1 s
0.4
0.3
BCP53 Series
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5
PACKAGE DIMENSIONS
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1.5
0.059 ǒmm
inchesǓ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
SOLDERING FOOTPRINT
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c0.24 0.29 0.35 0.009
D6.30 6.50 6.70 0.249
E3.30 3.50 3.70 0.130
e2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264
0.069 0.078
0.276 0.287
HE
- -
e1
0°10°0°10°
qq
SOT-223 (TO-261)
CASE 318E-04
ISSUE M
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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 Phone: 81-3-5773-3850
BCP53T1/D
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