Semiconductor Group 1
PNP Silicon AF Transistors BCP 51
... BCP 53
Type Marking Package1)
Pin Configuration
BCP 51
BCP 51-10
BCP 51-16
BCP 52
BCP 52-10
BCP 52-16
BCP 53
BCP 53-10
BCP 53-16
Q62702-C2107
Q62702-C2109
Q62702-C2110
Q62702-C2146
Q62702-C2112
Q62702-C2113
Q62702-C2147
Q62702-C2115
Q62702-C2116
BCP 51
BCP 51-10
BCP 51-16
BCP 52
BCP 52-10
BCP 52-16
BCP 53
BCP 53-10
BCP 53-16
SOT-223
1 2 3
Ordering Code
(tape and reel) 4
B C E C
1) For detailed information see chapter Package Outlines.
●For AF driver and output stages
●High collector current
●Low collector-emitter saturation voltage
●Complementary types: BCP 54 … BCP 56 (NPN)
5.91
Semiconductor Group 2
BCP 51
... BCP 53
Maximum Ratings
Parameter Symbol BCP 51 Unit
Collector-emitter voltage RBE ≤1kΩVCE0
VCER 45
45 V
Collector-base voltage VCB0 45
Emitter-base voltage VEB0
Collector current ICA
Base current IBmA
Total power dissipation, TS=124 ˚C1) Ptot W
Junction temperature Tj˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient1) Rth JA ≤ 72 K/W
Peak collector current ICM
Peak base current IBM
BCP 52
60
60
60
1
100
1.5
150
1.5
200
Values BCP 53
80
100
100
5
Junction - soldering point Rth JS ≤ 17
1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 3
BCP 51
... BCP 53
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
DC current gain1)
I
C = 5 mA, VCE = 2 V
I
C = 150 mA, VCE = 2 V
BCP 51/BCP 52/BCP 53
BCP 51/BCP 52/BCP 53-10
BCP 51/BCP 52/BCP 53-16
I
C = 500 mA, VCE = 2 V
VCollector-emitter breakdown voltage
I
C = 10 mA, IB = 0 BCP 51
BCP 52
BCP 53
V(BR)CE0 45
60
80
–
–
–
–
–
–
nA
µA
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150 ˚C
ICB0 –
––
–100
20
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
I
C = 100 µA, IB = 0 BCP 51
BCP 52
BCP 53
V(BR)CB0 45
60
100
–
–
–
–
–
–
Emitter-base breakdown voltage
I
E = 10 µA, IC = 0 V(BR)EB0 5––
V
Collector-emitter saturation voltage1)
I
C = 500 mA, IB = 50 mA VCEsat – – 0.5
–hFE 25
40
63
100
25
–
–
100
160
–
–
250
160
250
–
Base-emitter voltage1)
I
C = 500 mA, VCE = 2 V VBE ––1
µAEmitter-base cutoff current
VEB = 5 V, IC = 0 IEB0 ––10
MHzTransition frequency
I
C = 50 mA, VCE = 10 V, f = 100 MHz fT– 125 –
AC characteristics
1) Pulse test conditions: t≤300 µs, D = 2 %.
Semiconductor Group 4
BCP 51
... BCP 53
Total power dissipation Ptot =f(TA*; TS)
* Package mounted on epoxy
DC current gain hFE = f (IC)
VCE = 2 V
Transition frequency fT=f(IC)
VCE = 10 V
Collector cutoff current ICB0 =f(TA)
VCB = 30 V
Semiconductor Group 5
BCP 51
... BCP 53
Collector-emitter saturation voltage
IC=f(VCEsat)
hFE = 10
Base-emitter saturation voltage
IC=f(VBEsat)
hFE = 10
Permissible pulse load Ptot max/Ptot DC =f(tp)
