ZXMP6A17DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.125 ; ID= -3.1A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * Low on-resistance SO8 * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package APPLICATIONS * DC-DC Converters * Power Management functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMP6A17DN8TA 7'` 12mm 500 units ZXMP6A17DN8TC 13'` 12mm 2500 units PINOUT DEVICE MARKING ZXMP 6A17D Top view PROVISIONAL ISSUE A - SEPTEMBER 2002 1 ZXMP6A17DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -60 V Gate-Source Voltage V GS 20 V Continuous Drain Current@V GS =10V; T A =25C (b)(d) @V GS =10V; T A =70C (b)(d) @V GS =10V; T A =25C (a)(d) ID -3.1 -2.4 -2.3 A A A Pulsed Drain Current (c) I DM -11.1 A A Continuous Source Current (Body Diode)(b) IS -3.0 Pulsed Source Current (Body Diode)(c) I SM -11.1 A Power Dissipation at TA=25C (a)(d) Linear Derating Factor PD 1.25 10 W mW/C Power Dissipation at TA=25C (a)(e) Linear Derating Factor PD 1.81 14.5 W mW/C Power Dissipation at TA=25C (b)(d) Linear Derating Factor PD 2.15 17 W mW/C Operating and Storage Temperature Range T j :T stg -55 to +150 C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) R JA 100 C/W Junction to Ambient (b)(e) R JA 70 C/W Junction to Ambient (b)(d) R JA 60 C/W Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power. PROVISIONAL ISSUE A - SEPTEMBER 2002 2 ZXMP6A17DN8 CHARACTERISTICS Max Power Dissipation (W) -ID Drain Current (A) 10 RDS(on) Limited 1 DC 100m 10m 1s 100ms Single Pulse Tamb=25C One active die 1 10ms 1ms 100s 10 -VDS Drain-Source Voltage (V) 100 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 Two active die One active die 20 60 80 100 120 140 160 Temperature (C) Safe Operating Area Derating Curve 110 Tamb=25C 100 90 One active die 80 70 60 D=0.5 50 40 Single Pulse 30 D=0.2 20 D=0.05 10 D=0.1 0 100 1m 10m 100m 1 10 100 1k MaximumPower (W) Thermal Resistance (C/W) 40 Single Pulse Tamb=25C One active die 100 10 1 100 1m Pulse Width (s) 10m 100m 1 10 100 Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation PROVISIONAL ISSUE A - SEPTEMBER 2002 3 1k ZXMP6A17DN8 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. -60 TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS V I D =-250A, V GS =0V Zero Gate Voltage Drain Current I DSS -1.0 A Gate-Body Leakage I GSS 100 nA V DS =-60V, V GS =0V V GS =20V, V DS =0V Gate-Source Threshold Voltage V GS(th) -0.8 V I =-250A, V DS = V GS D V GS =-10V, I D =-2.2A V GS =-4.5V, I D =-1.8A 4.9 S V DS =-15V,I D =-2.2A Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) 0.125 0.190 g fs DYNAMIC (3) Input Capacitance C iss 670 pF Output Capacitance C oss 46.7 pF Reverse Transfer Capacitance C rss 28.0 pF 1.9 ns V DS =-30 V, V GS =0V, f=1MHz SWITCHING(2) (3) Turn-On Delay Time t d(on) Rise Time tr 22.4 ns Turn-Off Delay Time t d(off) 20.0 ns Fall Time tf 16.0 ns Gate Charge Qg 7.3 nC Total Gate Charge Qg 15.1 nC Gate-Source Charge Q gs 1.8 nC Gate-Drain Charge Q gd 1.9 nC Diode Forward Voltage (1) V SD -0.85 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr V DD =-30V, I D =-1A R G 6.0, V GS =-10V @ V DS =-30V,V GS =-5V, I D =-2.2A V DS =-30V,V GS =-10V, I D =-2.2A SOURCE-DRAIN DIODE -0.95 V T J =25C, I S =-2A, V GS =0V 26.4 ns 32.7 nC T J =25C, I F =-1.7A, di/dt= 100A/s NOTES (1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - SEPTEMBER 2002 4 ZXMP6A17DN8 TYPICAL CHARACTERISTICS 10V T = 25C 3.5V 3V 2.5V 1 -VGS 2V 0.1 0.01 0.1 1 10V T = 150C 4.5V 1 2V -VGS 0.1 1.5V 0.01 10 4.5V 3.5V 3V 2.5V 10 -ID Drain Current (A) -ID Drain Current (A) 10 -VDS Drain-Source Voltage (V) 0.1 1 10 -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 2.0 1 T = 25C 0.1 -VDS = 10V 1 RDS(on) Drain-Source On-Resistance () Normalised RDS(on) and VGS(th) T = 150C 2 3 4 1.6 RDS(on) 1.4 1.2 1.0 VGS(th) 0.8 VGS = VDS ID = -250uA 0.6 0.4 -50 5 0 50 100 150 -VGS Gate-Source Voltage (V) Tj Junction Temperature (C) Typical Transfer Characteristics Normalised Curves v Temperature 2V T = 25C -VGS 2.5V 10 3V 3.5V 1 4.5V 10V 0.1 VGS = -10V ID = - 0.9A 1.8 -ISD Reverse Drain Current (A) -ID Drain Current (A) 10 0.1 1 10 T = 150C 1 0.01 0.0 10 -ID Drain Current (A) On-Resistance v Drain Current T = 25C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) 1.4 Source-Drain Diode Forward Voltage PROVISIONAL ISSUE A - SEPTEMBER 2002 5 ZXMP6A17DN8 1000 900 800 700 600 500 400 300 200 100 0 0.1 10 VGS = 0V f = 1MHz -VGS Gate-Source Voltage (V) C Capacitance (pF) TYPICAL CHARACTERISTICS CISS COSS CRSS 1 10 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage ID = -2.2A 8 6 4 2 VDS = -30V 0 0 2 4 6 8 10 12 14 16 Q - Charge (nC) Gate-Source Voltage v Gate Charge PROVISIONAL ISSUE A - SEPTEMBER 2002 6 ZXMP6A17DN8 PACKAGE OUTLINE PACKAGE DIMENSIONS INCHES MILLIMETRES DIM MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 A1 0.004 0.010 0.10 0.25 D 0.189 0.197 4.80 5.00 H 0.228 0.244 5.80 6.20 E 0.150 0.157 3.80 4.00 L 0.016 0.050 0.40 1.27 e CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES 0.050 BSC 1.27 BSC b 0.013 0.020 0.33 0.51 c 0.008 0.010 0.19 0.25 0 8 0 8 h 0.010 0.020 0.25 0.50 (c) Zetex plc 2002 Americas Asia Pacific Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 uk.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com PROVISIONAL ISSUE A - SEPTEMBER 2002 7